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Электронный компонент: DK2712FAK

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DK27..FA
FEATURES
s
Low Switching Losses At High Frequency
s
Fully Characterised For Operation Up To 20kHz
APPLICATIONS
s
High Power Inverters And Choppers
s
UPS
s
AC Motor Drives
s
Induction Heating
s
Cycloconverters
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 3/4" 16 UNF thread, e.g. DK27 12FAK
or
Add M to type number for M16 thread, e.g. DK27 12FAM.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
1200V
I
T(RMS)
290A
I
TSM
5000A
dVdt
200V/
s
dI/dt
500A/
s
t
q
20
s
DK27..FA
Fast Switching Thyristor
Replaces January 2000 version, DS4269-3.0
DS4269-4.0 July 2001
DK27 12FA K or M
DK27 10FA K or M
Conditions
V
RSM
= V
RRM
+ 100V
I
DRM
= I
RRM
= 25mA
at V
RRM
or V
DRM
& T
vj
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
1200
1000
Outline type code: TO93
See Package Details for further information.
Fig. 1 Package outline
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DK27..FA
SURGE RATINGS
Conditions
t
p
10ms half sine; T
case
= 125
o
C
V
R
= 0% V
RRM
- 1/4 sine
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
125.0 x 10
3
A
2
s
5.0
kA
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
Symbol
Parameter
-
0.13
o
C/W
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 35.0Nm
with mounting compound
0.06
-
o
C/W
Thermal resistance - case to heatsink
R
th(c-h)
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
-
Mounting torque
30.0
35.0
Nm
-40
150
o
C
-
On-state (conducting)
-
125
o
C
dc
CURRENT RATINGS
Symbol
Parameter
Conditions
Units
Max.
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
Half wave resistive load, T
case
= 80
o
C
185
A
T
case
= 80
o
C
290
A
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
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DK27..FA
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
< 0.5
s, T
j
= 125C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
1.85
V
-
25
mA
-
200
V/
s
Repetitive 50Hz
-
500
A/
s
Non-repetitive
-
800
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.2
-
V
-
1.0
m
Delay time
t
gd
1.5*
-
s
Total turn-on time
t
(ON)TOT
3*
-
s
T
j
= 25C, I
T
= 50A,
V
D
= 300V, I
G
= 1A,
dI/dt = 30A/
s, dI
G
/dt = 1A/
s
*Typical value.
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
-
70
mA
T
j
= 125C, I
T
= 200A, V
R
= 50V,
dV/dt = 200V/
s (Linear to 60% V
DRM
),
dI
R
/dt = 30A/
s, Gate open circuit
Turn-off time
t
q
20
-
s
t
q
code: A
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C, R
L
= 1k
-
3.0
V
-
200
mA
-
0.2
V
Typ.
Max.
Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
-
5.0
V
-
4
A
-
16
W
-
3.0
W
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DK27..FA
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Gate characteristics
Fig.4 Typical recovered charge (for a device rated V
DRM
= 800V, t
q
= 20
s)
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DK27..FA
Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I
2
t rating
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DK27..FA
NOTES:
1. V
D
600V.
2. V
R
10V.
3. R.C Snubber, C = 0.22
F, R = 4.7
NOTES:
1. V
D
600V.
2. V
R
10V.
3. R.C Snubber, C = 0.22
F, R = 4.7
Fig.7 Energy per pulse for sinusoidal pulses
Fig.8 Maximum allowable peak on-state current vs pulse width for T
case
= 65C
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DK27..FA
NOTES:
1. V
D
600V.
2. V
R
10V.
3. R.C Snubber, C = 0.22
F, R = 4.7
NOTES:
1. dI/dt = 25A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
Fig.9 Maximum allowable peak on-state current vs pulse width for T
case
= 90C
Fig.10 Energy per pulse for trapezoidal pulses
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DK27..FA
NOTES:
1. dI/dt = 25A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
NOTES:
1. dI/dt = 25A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
Fig.11 Maximum allowable peak on-state current vs pulse width for T
case
= 65C
Fig.12 Maximum allowable peak on-state current vs pulse width for T
case
= 90C
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DK27..FA
NOTES:
1. dI/dt = 50A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
NOTES:
1. dI/dt = 50A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
Fig.13 Energy per pulse for trapezoidal pulses
Fig.14 Maximum allowable peak on-state current vs pulse width for T
case
= 65C
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DK27..FA
NOTES:
1. dI/dt = 50A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
NOTES:
1. dI/dt = 100A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
Fig.15 Maximum allowable peak on-state current vs pulse width for T
case
= 65C
Fig.16 Energy per pulse for trapezoidal pulses
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DK27..FA
NOTES:
1. dI/dt = 100A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
NOTES:
1. dI/dt = 100A/
s
2. V
D
600V.
3. V
R
10V.
4. R.C Snubber, C = 0.22
F, R = 4.7
Fig.17 Maximum allowable peak on-state current vs pulse width for T
case
= 65C
Fig.18 Maximum allowable peak on-state current vs pulse width for T
case
= 90C
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DK27..FA
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
160
10
8 min
8 min
8.4 0.3
210
10
4
15 max
30 max
Hex. 27AF
M = M12
K = 1/2" 20 UNF
K = 20.6 0.6
M = 18.0 0.5
Nominal weight: 120g
Mounting torque: 15Nm 10%
Gate lead colour: White
Cathode lead colour: Red
Package outine type code: TO94
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DK27..FA
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm
discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS4269-3 Issue No. 3.0 July 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.