1/7
www.dynexsemi.com
DNB61
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DNB61 24
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
RRM
2500V
I
F(AV)
3438A
I
FSM
32000A
DNB61
Rectifier Diode
Replaces January 2000 version, DS4178-4.0
DS4178-5.0 July 2001
2500
2400
2200
2000
1800
1600
DNB61 25
DNB61 24
DNB61 22
DNB61 20
DNB61 18
DNB61 16
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: DO200AD
See Package Details for further information.
Fig. 1 Package outline
2/7
www.dynexsemi.com
DNB61
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
3438
A
-
5401
A
-
4997
A
Half wave resistive load
2589
A
-
4066
A
-
3586
A
T
case
= 100
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
2880
A
-
4520
A
-
4100
A
Half wave resistive load
1870
A
-
2940
A
-
2550
A
3/7
www.dynexsemi.com
DNB61
SURGE RATINGS
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 175
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
5.12 x 10
6
A
2
s
32.0
kA
3.25 x 10
6
A
2
s
25.5
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.025
Anode dc
Clamping force 45.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.003
Double side
-
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
55
200
o
C
Forward (conducting)
-
o
C
-
0.006
o
C/W
o
C/W
Cathode dc
-
0.027
o
C/W
Double side cooled
-
0.013
o
C/W
Clamping force
40.0
48.0
kN
175
Reverse (blocking)
-
o
C
185
4/7
www.dynexsemi.com
DNB61
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RR
Peak recovery current
140
-
A
3000
At V
RRM
, T
case
= 175
o
C
-
100
mA
-
1.05
V
At 1500A peak, T
case
= 25
o
C
Conditions
Typ.
Max.
Units
At T
vj
= 175C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.15
m
At T
vj
= 175C
-
0.79
V
t
rr
Reverse recovery time
30
-
s
I
F
= 1000A, dI
RR
/dt = 5A/
s
T
case
= 125C, V
R
= 100V
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
I
F
Where
A = 0.827166
B = 0.03596
C = 0.000111
D = 0.007187
these values are valid for T
j
= 125C for I
F
500A to 10000A
0
1.0
2.0
3.0
Instantaneous forward voltage, V
F
- (V)
0
2000
4000
6000
8000
10000
Instantaneous forward current, I
F
- (A)
Measured under
pulse conditions
T
j
= 25C
T
j
= 175C
0
2000
4000
6000
Mean forward current, I
F(AV)
- (A)
0
2000
4000
6000
8000
10000
Mean power dissipation - (W)
dc
Half wave
3 phase
6 phase
5/7
www.dynexsemi.com
DNB61
Fig.5 Maximum (limit) transient thermal impedance -
junction to case
Fig.4 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
175C)
1
10
1
2 3
5
10
20
50
0
10
20
30
40
50
60
I
2
t value - (A
2
s x 10
6
)
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
1
2
3
4
5
6
I
2
t =
2
x t
2
V
R
= 50% V
RRM
I
2
t
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance - (
C/W)
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.0130
0.0141
0.0170
0.0200
Anode side
0.0250
0.0261
0.0290
0.0320
PDF 
ZIP