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DNB65
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DNB65 40
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
DNB65
Recifier Diode
Replaces January 2000 version, DS4175-2.0
DS4175-3.0 August 2001
4500
4400
4200
4000
3800
3600
DNB65 45
DNB65 44
DNB65 42
DNB65 40
DNB65 38
DNB65 36
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
KEY PARAMETERS
V
RRM
4500V
I
F(AV)
2590A
I
FSM
31000A
Outline type code: DO200AD
See Package Details for further information.
Fig. 1 Package outline
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DNB65
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load, T
case
= 100
o
C
2000
A
T
case
= 100
o
C
3140
A
T
case
= 100
o
C
2800
A
Half wave resistive load, T
case
= 100
o
C
1284
A
T
case
= 100
o
C
2017
A
T
case
= 100
o
C
1715
A
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
2590
A
-
4068
A
-
3727
A
Half wave resistive load
1940
A
-
3047
A
-
2656
A
T
case
= 100
o
C unless otherwise stated
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DNB65
SURGE RATINGS
Conditions
10ms half sine; T
case
= 150
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 150
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
4.8 x 10
6
A
2
s
31.0
kA
3.075 x 10
6
A
2
s
24.8
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.025
Anode dc
Clamping force 45.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.003
Double side
-
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
55
175
o
C
Forward (conducting)
-
o
C
-
0.006
o
C/W
o
C/W
Cathode dc
-
0.027
o
C/W
Double side cooled
-
0.013
o
C/W
Clamping force
40.0
48.0
kN
150
Reverse (blocking)
-
o
C
150
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DNB65
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
-
500
A
6000
At V
RRM
, T
case
= 150
o
C
-
150
mA
-
1.45
V
At 3000A peak, T
case
= 25
o
C
Conditions
Typ.
Max.
Units
At T
vj
= 150C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.19
m
At T
vj
= 150C
-
0.84
V
t
rr
Reverse recovery time
25
-
s
I
F
= 1500A, dI
RR
/dt = 25A/
s
T
case
= 25C, V
R
= 100V
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
I
F
Where
A = 0.36984
B = 0.292197
C = 0.000354
D = 0.03111
these values are valid for T
j
= 125C for I
F
500A to 10000A
0
1.0
2.0
3.0
Instantaneous forward voltage, V
F
- (V)
0
2000
4000
6000
8000
10000
Instantaneous forward current, I
F
- (A)
Measured under pulse conditions
T
j
= 150C
T
j
= 25C
0
2000
4000
6000
Mean forward current, I
F(AV)
- (A)
0
2000
4000
6000
8000
10000
Mean power dissipation - (W)
dc
Half wave
3 phase
6 phase
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DNB65
Fig.5 Maximum (limit) transient thermal impedance -
junction to case
Fig.4 Surge (non-repetitive) forward current vs time
at T
case
150C)
1
10
1
2
3
5
10
20
50
0
10
20
30
40
50
60
I
2
t value - (A
2
s x 10
6
)
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
I
2
t =
2
x t
2
1
2
3
4
5
6
I
2
t
V
R
= 0
V
R
= 50% V
RRM
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance - (
C/W)
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.0130
0.0141
0.0170
0.0200
Anode side
0.0210
0.0221
0.0250
0.0280
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