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DS1104SG
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
Rectification
s
Freewheel Diode
s
DC Motor Control
s
Power Supplies
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1104SG29
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
RRM
3000V
I
F(AV)
1571A
I
FSM
20000A
DS1104SG
Rectifier Diode
Replaces January 2000 version, DS4167-3.2
DS4167-4.0 August 2001
3000
2900
2800
2700
2600
2500
DS1104SG30
DS1104SG29
DS1104SG28
DS1104SG27
DS1104SG26
DS1104SG25
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
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DS1104SG
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
1315
A
-
2065
A
-
1880
A
Half wave resistive load
840
A
-
1320
A
-
1130
A
CURRENT RATINGS
T
case
= 75
o
C unless otherwise stated
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load
1849
A
-
2904
A
-
2545
A
Half wave resistive load
1173
A
-
1843
A
-
1502
A
T
case
= 100
o
C unless otherwise stated
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DS1104SG
SURGE RATINGS
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 175
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
A
2
s
20.0
kA
1.28x 10
6
A
2
s
16.0
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.064
Anode dc
Clamping force 12.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.008
Double side
-
175
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-55
200
o
C
-
Forward (conducting)
-
185
o
C
-
0.016
o
C/W
o
C/W
Cathode dc
-
0.064
o
C/W
Double side cooled
-
0.032
o
C/W
2.0 x 10
6
Clamping force
-
11.5
13.5
kN
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DS1104SG
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
1600
At T
vj
= 175C
-
Q
S
Total stored charge
I
F
= 1000A, dI
rr
/dt = 3A/
s
T
case
= 175C, V
R
= 100V
Symbol
V
FM
I
RRM
I
rr
Reverse recovery current
V
TO
Threshold voltage
r
T
Slope resistance
0.31
m
At T
vj
= 175C
-
0.67
V
-
85
A
-
At V
RRM
, T
case
= 175
o
C
-
50
mA
-
1.3
V
At 1800A peak, T
case
= 25
o
C
Conditions
Min.
Max.
Units
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
I
F
Where
A = 0.82527
B = 0.07771
C = 0.00012
D = 0.019599
these values are valid for T
j
= 125C for I
F
500A to 2500A
0.5
1.0
1.5
2.0
Instantaneous forward voltage, V
F
- (V)
0
500
1000
1500
2000
2500
Instantaneous forward current, I
F
- (A)
Measured under pulse
conditions
T
j
= 25C
T
j
= 175C
0
1000
2000
3000
Mean forward current, I
F(AV)
- (A)
0
1000
2000
3000
4000
Mean power dissipation - (W)
dc
Half wave
3 phase
6 phase
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DS1104SG
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
Fig.6 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
175C)
0.1
1.0
10
100
Rate of decay of on-state current dI
F
/dt - (A/s)
10000
1000
100
Stored charge, Q
S
- (
C)
Conditions:
T
j
= 175C
V
R
= 100V
I
F
= 1000A
I
RM
I
F
dI
F
/dt
Q
S
0.1
1.0
10
100
Rate of decay of forward current, dI
F
/dt - (A/s)
1000
100
10
Reverse recovery current I
rr
- (A)
Conditions:
T
j
= 175C
V
R
= 100V
I
F
= 1000A
1
10
1
2
3
5
10
20
50
0
5
10
15
20
25
30
800
900
700
1000
1100 I
2
t value - (A
2
s x 10
3
)
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
I
2
t =
2
x t
2
1200
1300
I
2
t
0.1
0.01
0.001
Thermal Impedance - junction to case, R
th(j
c)
- (
C/W)
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
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