DSF21545SV
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APPLICATIONS
s
The DSF21545SV is a purpose designed freewheel
diode to complement the DG858BW GTO in inverter
circuits, using energy recovery snubbers.
FEATURES
s
The DSF21545SV is designed for fast turn-on thus
minimising reverse current through the GTO.
s
Low recovered charge for low losses.
s
DSF21545SV is housed in a similar outline to that of the
DG858BW therefore offering complete mechanical
compatibility for parallel and series clamping.
VOLTAGE RATINGS
KEY PARAMETERS
V
RRM
4500V
I
F(AV)
3230A
I
FSM
20000A
Q
r
1800
C
t
rr
7.0
s
4500
DSF21545SV45
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: V.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load, T
case
= 65
o
C
3230
A
T
case
= 65
o
C
5080
A
T
case
= 65
o
C
4680
A
Half wave resistive load, T
case
= 65
o
C
2070
A
T
case
= 65
o
C
3255
A
T
case
= 65
o
C
2875
A
DSF21545SV
Fast Recovery Diode
Replaces March 1998 version, DS4153-3.1
DS4153-4.0 January 2000
DSF21545SV
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SURGE RATINGS
Conditions
Max.
Units
20
kA
2.0 x 10
6
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
16
kA
1.28 x 10
6
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 150
o
C
-
kA
-
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 100% V
RRM,
T
j
= 150
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.015
Anode dc
Clamping force 35.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.002
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.004
o
C/W
o
C/W
Cathode dc
-
0.015
o
C/W
Double side cooled
-
0.0075
o
C/W
T
stg
Storage temperature range
-55
150
o
C
kN
48
34
Clamping force
-
T
vj
Virtual junction temperature
On-state (conducting)
-
150
o
C
Min.
CHARACTERISTICS
t
rr
150
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
s, T
j
= 125
o
C
-
75
V
At T
vj
= 150
o
C
-
0.25
m
At T
vj
= 150
o
C
-
1.25
V
2
-
-
-
500
A
-
1800
C
7.0
-
s
At V
RRM
, T
case
= 150
o
C
-
mA
At 3000A peak, T
case
= 25
o
C
-
2.0
V
Conditions
Max.
I
F
= 1000A, di
RR
/dt = 100A/
s
T
case
= 150
o
C, V
R
= 100V
DSF21545SV
3/8
CURVES
0
1000
2000
3000
4000
5000
Instantaneous forward current I
F
- (A)
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage V
F
- (V)
Measured under
pulse conditions
T
j
= 150C
T
j
= 25C
DEFINITION OF K FACTOR AND Q
RA1
0.5x I
RR
I
RR
dI
R
/dt
t
1
t
2
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
k = t
1
/t
2
Fig.1 Maximum (limit) forward characteristics
DSF21545SV
4/8
0
50
100
150
200
250
Transient forward votage V
FP
- (V)
500
1000
1500
2000
2500
Rate of rise of forward current dI
F
/dt - (A/
s)
T
j
= 125C limit
T
j
= 25C limit
Current
waveform
Voltage
waveform
V
FR
y
x
di =
y
dt
x
3000
0
100
200
300
400
500
Instantaneous forward current I
F
- (A)
0
0.5
1.0
1.5
2.0
Instantaneous forward voltage V
F
- (V)
Measured under
pulse conditions
T
j
= 150C
T
j
= 25C
Fig.2 Maximum (limit) forward characteristics
Fig.3 Transient forward voltage vs rate of rise of forward current
DSF21545SV
5/8
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/
s)
1000
100
10000
100000
Reverse recovered charge Q
S
- (
C)
I
RR
QS
t
p
= 1ms
I
F
dI
R
/dt
Q
S
=
Conditions:
T
j
= 150C,
V
R
= 100V
50
s
0
I
F
= 4000A
I
F
= 2000A
I
F
= 1000A
I
F
= 500A
I
F
= 200A
I
F
= 100A
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/
s)
100
10
1000
10000
Reverse recovery current I
RR
- (A)
Conditions:
T
j
= 150 C,
V
R
= 100V
I
F
= 4000A
I
F
= 2000A
I
F
= 1000A
I
F
= 500A
I
F
= 200A
I
F
= 100A
Fig.4 Recovered charge
Fig.5 Typical reverse recovery current vs rate of rise of reverse current
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