GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/12
The GP2400ESM12 is a single switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
This device is optimised for traction drives and other
applications requiring high thermal cycling capability.
FEATURES
s
n - Channel Enhancement Mode
s
Non Punch Through Silicon
s
High Gate Input Impedance
s
Optimised For High Power High Frequency Operation
s
Isolated MMC Base with AlN
s
1200V Rating
s
2400A Per Module
APPLICATIONS
s
High Power Switching
s
Motor Control
s
Inverters
s
Traction Drives
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
2.7V
I
C
(max)
2400A
I
C(PK)
(max)
4800A
Fig. 1 Electrical connections - (not to scale)
Fig.2 Single switch circuit diagram
Outline type code: E
(See package details for further information)
ORDERING INFORMATION
Order As: GP2400ESM12
Note: When ordering, please use the whole part number.
C2
C1
Aux C
G
Aux E
E1
E2
E3
External connection
External connection
C3
GP2400ESM12
Powerline N-Channel Single Switch IGBT Module
Preliminary Information
DS5360-1.1 May 2000
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/12
Test Conditions
DC junction to case
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 25C unless stated otherwise.
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
DC, T
case
= 75C, T
j
= 125C
1ms, T
case
= 75C, T
j
= 125C
T
case
= 25C (Transistor), T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
kW
V
Max.
1200
20
2400
4800
20.8
2500
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
6
13.3
6
150
125
125
5
2
10
Min.
-
-
-
-
-
40
-
-
-
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/12
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 120mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 2400A
V
GE
= 15V, I
C
= 2400A, , T
case
= 125C
DC, T
case
= 50C, T
j
= 125C
t
p
= 1ms, T
j
= 125C
I
F
= 2400A
I
F
= 2400A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
3
100
12
7.5
3.5
4.0
2400
4800
2.4
2.5
-
-
Typ.
-
-
-
-
2.7
3.2
-
-
2.2
2.3
270
10
Min.
-
-
-
4
-
-
-
-
-
-
-
-
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/12
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
-
-
-
-
-
-
-
Typ.
2300
400
820
2600
1100
490
200
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 80nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
T
case
= 25C unless stated otherwise.
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
-
-
-
-
-
-
-
Typ.
2570
400
980
2650
1000
620
400
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 80nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case
= 125C unless stated otherwise.
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/12
SWITCHING DEFINITIONS
t
1
t
2
t
3
t
4
10%
90%
10%
+15V
0V
V
ge
I
C
V
ce
-15V
t
5
t
6
t
7
I
C
V
ce
V
ge
90%
0V
-15V
+15V
90%
10%
Fig.3 Definition of turn-on switching times
Fig.4 Definition of turn-off switching times
E
on
=
V
ce
.I
c
dt
t
d(on)
= t
2
- t
1
t
r
= t
3
- t
2
t
4
+ 5
s
t
1
E
off
=
V
ce
.I
c
dt
t
d(off)
= t
6
- t
5
t
f
= t
7
- t
6
t
7
+ 5
s
t
5
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/12
TYPICAL CHARACTERISTICS
Fig.5 Typical output characteristics
Fig.6 Typical output characteristics
Fig.7 Typical turn-on energy vs collector current
Fig.8 Typical turn-on energy vs collector current
0
600
1200
1800
3600
4200
4800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25C
3000
2400
0
600
1200
1800
3600
4200
4800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125C
3000
2400
0
100
200
300
400
500
600
700
800
900
1000
0
800
400
1200
1600
2000
2400
Collector current, I
C
- (A)
T
urn-on energy
, E
on
- (mJ)
Conditions:
T
case
= 25C
V
ce
= 600V
V
ge
= 15V
R
g
= 4.3
R
g
= 3.3
R
g
= 7
0
200
400
600
800
1000
1200
0
400
800
1200
1600
2000
2400
T
urn-on energy
, E
on
(mJ)
Collector current, I
C
- (A)
Conditions:
T
case
= 125C
V
ce
= 600V
V
ge
= 15V
A: R
g
= 7
B: R
g
= 4.3
C: R
g
= 3.3
A
B
C
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/12
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
200
0
400
600
800
1000
1200
1400
1600
0
400
800
1200
1600
2000
2400
Collector current, I
C
- (A)
T
urn-of
f energy
, E
of
f
- (mJ)
Conditions:
T
case
= 25C
V
ce
= 600V
V
ge
= 15V
A: R
g
= 7
B: R
g
= 4.3
C: R
g
= 3.3
A
B
C
0
200
400
600
800
1000
1200
1400
1600
1800
0
400
800
1200
1600
2000
2400
Collector current, I
C
- (A)
T
urn-of
f energy
, E
of
f
- (mJ)
Conditions:
T
case
= 125'C
V
ce
= 600V
V
ge
= 15V
A: R
g
= 7
B: R
g
= 4.3
C: R
g
= 3.3
A
B
C
0
20
40
60
80
100
120
140
160
0
400
800
1200
1600
2000
2400
Collector current, I
C
- (A)
Diode turn-of
f energy
, E
of
f
- (mJ)
Conditions:
V
CE
= 600V
V
GE
= 15V
R
g
= 3.3
T
case
= 125C
T
case
= 25C
0
500
1000
1500
2000
2500
3000
0
400
800
1200
1600
2000
2400
Collector current, I
C
- (A)
Switching times - (ns)
t
d(off)
t
f
t
d(on)
t
r
Conditions:
T
case
= 125C
V
ce
= 600V
V
ge
= 15V
R
g
= 3.3
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
8/12
Fig.13 Diode typical forward characteristics
Fig.14 Reverse bias safe operating area
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
0.1
1
10
100
0.001
0.01
0.1
1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th(j-c)
- (C/kW)
Transistor
Diode
0
400
800
1200
1600
2000
2400
0
0.5
1
1.5
2
2.5
3
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 125C
T
j
= 25C
0
500
1000
1500
2000
2500
3000
3500
0
200
400
600
800
1000
1200
1400
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Conditions:
T
case
= 125'C
V
ge
= 15
R
g
= 3.3 ohms
1
10
100
1000
10000
1
10
100
1000
10000
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
I
C max
(DC)
t
p
= 1ms
t
p
= 100
s
t
p
= 50
s
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/12
Fig.18 3-Phase inverter operating frequency
Fig.19 DC current rating vs case temperature
0
1000
2000
3000
4000
5000
6000
1
10
20
f
MAX
- (kHz)
In
v
e
r
ter phase current - (A)
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
Conditions:
T
j
= 125C, T
c
= 75C,
R
g
= 3.3
, V
CC
= 600V
0
500
1000
1500
2000
2500
3000
3500
4000
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (C)
DC collector current, I
C
- (A)
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
10/12
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1650g
Module outline type code: E
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/12
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving high power IGBTs with concept gate drivers
AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than a basic semiconductor
switch, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
12/12
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50.
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50.
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2000 Publication No. DS5360-1 Issue No. 1.1 May 2000
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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