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Электронный компонент: GP2401ESM18

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GP2401ESM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
www.dynexsemi.com
FEATURES
s
Low V
CE(SAT)
s
High Thermal Cycling Capability
s
Non Punch Through Silicon
s
Isolated MMC Base with AlN Substrates
APPLICATIONS
s
High Reliability Inverters
s
Motor Controllers
s
Traction Drives
s
Low-Loss System Retrofits
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP2401ESM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
CE(SAT)
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
GP2401ESM18
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1800V
V
CE(sat)
(typ)
2.6V
I
C
(max)
2400A
I
C(PK)
(max)
4800A
GP2401ESM18
Hi-Reliability Single Switch Low V
CE(SAT)
IGBT Module
Replaces February 2000 version, DS5345-1.0
DS5345-2.4 January 2001
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: E
(See package details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
E3
External connection
External connection
C3
GP2401ESM18
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
T
case
= 80C for T
j
= 125C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
kW
V
Max.
1800
20
2400
4800
20.8
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
6
14
6
150
125
125
5
2
10
Min.
-
-
-
-
-
40
-
-
-
GP2401ESM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 120mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 2400A
V
GE
= 15V, I
C
= 2400A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 2400A
I
F
= 2400A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
3
100
12
6.5
3.2
4
2400
4800
2.5
2.6
-
-
Typ.
-
-
-
5.5
2.6
3.3
-
-
2.2
2.3
270
10
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP2401ESM18
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
2300
480
2000
750
600
1050
650
-
-
Typ.
2050
350
1700
500
400
900
500
1000
350
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 50nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 6000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
2600
500
2400
850
700
1600
1000
-
-
Typ.
2250
350
2000
600
450
1400
850
1200
500
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 50nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 5000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
GP2401ESM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25C
600
1200
1800
3600
4200
4800
3000
2400
0
600
1200
1800
3600
4200
4800
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125C
3000
2400
0
1600
400
800
Collector current, I
C
- (A)
0
1.0
1.2
1.4
1.6
1.8
2.0
Energy - (J)
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
R
G
= 2.2
L = 50nH
0.4
0.2
0.6
0.8
1200
2400
2000
E
REC
E
ON
E
OFF
0
4
1
2
Gate resistance, R
G
- (Ohms)
0
3.0
3.5
4.0
4.5
Energy - (J)
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
I
C
= 2400A
L = 50nH
1.0
0.5
1.5
2.5
2.0
3
8
5
6
7
10
9
E
REC
E
OFF
E
ON