GP400DDM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
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FEATURES
s
High Thermal Cycling Capability
s
400A Per Switch
s
Non Punch Through Silicon
s
Isolated MMC Base with AlN Substrates
APPLICATIONS
s
High Reliability Inverters
s
Motor Controllers
s
Traction Drives
s
Resonant Converters
The Powerline range of high power modules includes half
bridge, dual, chopper and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The GP400DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP400DDM12
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
2.7V
I
C
(max)
400A
I
C(PK)
(max)
800A
GP400DDM12
Dual Switch IGBT Module
Advance Information
DS5503-1.0 October 2001
Fig. 1 Dual switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: D
(See package details for further information)
1
3
2
4
12
11
10
7
6
5
8
9
3(C1)
5(E
1
)
6(G
1
)
7(C
1
)
12(C
2
)
11(G
2
)
10(E
2
)
1(E1)
4(E2)
2(C2)
GP400DDM12
29
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
T
case
= 80C
1ms, T
case
= 105C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
W
V
Max.
1200
20
400
800
3470
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
36
80
8
150
125
125
5
2
10
Min.
-
-
-
-
-
40
-
-
-
GP400DDM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 120mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125C
DC, T
case
= 50C
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
1
20
2
7.5
3.5
4
400
800
2.5
2.5
-
-
Typ.
-
-
-
5.5
2.7
3.2
-
-
2.2
2.3
45
20
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP400DDM12
49
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Units
ns
ns
mJ
ns
ns
mJ
C
Max.
-
-
-
-
-
-
-
Typ.
800
110
65
700
170
45
30
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
-
-
-
-
-
-
-
Typ.
1000
150
80
800
300
75
65
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
GP400DDM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25C
500
400
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125C
500
400
0
20
10
30
40
50
60
70
80
90
0
100
200
300
400
500
Collector current, I
C
- (A)
Switching energy - (mJ)
E
off
E
on
Conditions:
V
ce
= 600V
T
c
= 125C
R
g
= 4.7
0
40
80
100
140
20
60
120
160
Gate Resistance, R
g
- (Ohms)
Switching energy, E
sw
- (mJ)
0
4
8
12
16
Conditions:
V
ce
= 900V
I
C
= 400A
T
c
= 125C
E
off
E
on
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