GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
The GP400DDS12 is a dual switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
FEATURES
s
n - Channel
s
Enhancement Mode
s
High Input Impedance
s
Optimised For High Power High Frequency Operation
s
Isolated Base
s
Full 1200V Capability
s
400A Per Arm
APPLICATIONS
s
High Power Switching
s
Motor Control
s
Inverters
s
Traction Systems
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
2.7V
I
C
(max)
400A
I
C(PK)
(max)
800A
Fig. 1 Electrical connections - (not to scale)
Fig.2 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
ORDERING INFORMATION
Order As: GP400DDS12
Note: When ordering, please use the whole part number.
1
3
2
4
12
11
10
7
6
5
8
9
3(C
1
)
4(E
2
)
2(C
2
)
12(C
2
)
7(C
1
)
11(G
2
)
10(E
2
)
5(E
1
)
6(G
1
)
1(E
1
)
GP400DDS12
Powerline N-Channel Dual Switch IGBT Module
DS5341-1.1 February 2000
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/10
THERMAL AND MECHANICAL RATINGS
Symbol
Conditions
DC junction to case
o
C/kW
35
Max.
-
Min.
Parameter
Units
R
th(j-c)
Thermal resistance - transistor (per arm)
T
stg
Storage temperature range
Transistor
o
C
150
125
-
40
R
th(c-h)
Thermal resistance - Case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
8
-
-
Mounting - M6
Nm
5
-
-
o
C/kW
T
j
Junction temperature
o
C
Screw torque
Diode
o
C
125
-
Electrical connections - M4
Nm
2
-
Electrical connections - M8
Nm
10
-
Thermal resistance - diode (per arm)
DC junction to case
o
C/kW
70
-
-
R
th(j-c)
V
CES
Collector-emitter voltage
-
DC, T
case
= 25C
600
Test Conditions
Symbol
I
C
Gate-emitter voltage
V
GE
= 0V
1200
Units
V
20
Max.
Parameter
T
case
= 25C unless stated otherwise.
Collector current
3750
Maximum power dissipation
P
max
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Isolation voltage
V
isol
V
2500
V
V
GES
A
I
C(PK)
W
T
case
= 25C (Transistor)
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
DC, T
case
= 75C
400
A
1ms, T
case
= 75C
A
800
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
C
ies
Input capacitance
Module inductance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
nH
-
-
20
45
-
-
-
nF
L
M
I
F
Diode forward current
I
FM
Diode maximum forward current
DC
t
p
= 1ms
A
400
800
-
-
-
-
V
F
Diode forward voltage
I
F
= 400A
3.0
2.5
-
A
V
I
F
= 400A, T
case
= 125C
2.9
2.4
-
V
ELECTRICAL CHARACTERISTICS
Symbol
Collector cut-off current
I
GES
Gate leakage current
Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
=
20V, V
CE
= 0V
mA
1
4
Max.
-
Typ.
-
-
Min.
-
Parameter
T
case
= 25C unless stated otherwise.
V
7.5
3.5
2.7
-
Gate threshold voltage
V
GE
= 15V, I
C
= 400A
-
4
I
C
= 120mA, V
GE
= V
CE
Units
I
CES
A
V
GE(TH)
V
4.0
3.2
-
V
GE
= 15V, I
C
= 400A, T
case
= 125C
V
V
CE(SAT)
Collector-emitter saturation voltage
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
mA
50
-
-
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/10
INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Symbol
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
Conditions
ns
ns
mJ
1300
200
170
130
150
-
-
-
Parameter
Min.
Typ.
Max.
Units
1100
t
f
t
d(on)
Turn-on delay time
ns
900
-
800
Rise time
E
ON
Turn-on energy loss
ns
mJ
400
130
90
320
-
-
t
r
I
C
= 400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 100nH
T
case
= 125C unless stated otherwise.
T
case
= 25C unless stated otherwise
Q
rr
Diode reverse recovery charge
C
50
30
-
Q
rr
Diode reverse recovery charge
C
-
170
-
I
F
= 400A
V
R
= 50%V
CES
,
dI
F
/dt = 2000A/
s
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
ns
ns
mJ
1500
250
250
170
200
-
-
-
1300
t
f
t
d(on)
Turn-on delay time
ns
1200
-
950
Rise time
E
ON
Turn-on energy loss
ns
mJ
450
200
150
350
-
-
t
r
I
C
= 400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 100nH
Q
rr
Diode reverse recovery charge
C
70
50
-
Q
rr
Diode reverse recovery charge
C
-
225
-
I
F
= 400A
V
R
= 50%V
CES
,
dI
F
/dt = 2000A/
s
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
SWITCHING DEFINITIONS
t
1
t
2
t
3
t
4
10%
90%
10%
+15V
0V
V
ge
I
C
V
ce
-15V
t
5
t
6
t
7
I
C
V
ce
V
ge
90%
0V
-15V
+15V
90%
10%
Fig.3 Definition of turn-on switching times
Fig.4 Definition of turn-off switching times
E
on
=
V
ce
.I
c
dt
t
d(on)
= t
2
- t
1
t
r
= t
3
- t
2
t
4
+ 5
s
t
1
E
off
=
V
ce
.I
c
dt
t
d(off)
= t
6
- t
5
t
f
= t
7
- t
6
t
7
+ 5
s
t
5
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