GP400LSS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
FEATURES
s
Non Punch Through Silicon
s
Isolated Copper Baseplate
s
Low Inductance Internal Construction
s
1200V Rating
s
400A Per Module
APPLICATIONS
s
High Power Inverters
s
Motor Controllers
s
Induction Heating
s
Resonant Converters
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP400LSS12 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP400LSS12
Note: When ordering, please use the compete part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
2.7V
I
C
(max)
400A
I
C(PK)
(max)
800A
GP400LSS12
Single Switch IGBT Module
Replaces February 2000 version, DS5306-1.2
DS5306-2.3 November 2000
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: L
(See package details for further information)
2(E)
3(G
1
)
1(C)
5(E
1
)
4(C
1
)
1
2
3
5
4
GP400LSS12
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
DC, T
case
= 75C
1ms, T
case
= 80C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
W
V
Max.
1200
20
400
800
2980
2500
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
42
80
15
150
125
125
5
2
Min.
-
-
-
-
-
40
-
-
GP400LSS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, , T
case
= 125C
DC, T
case
= 50C
t
p
= 1ms, T
case
= 80C
I
F
= 400A
I
F
= 400A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
1
25
2
6.5
3.5
4
400
800
2.4
2.5
-
-
Typ.
-
-
-
-
2.7
3.2
-
-
2.2
2.3
45
15
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP400LSS12
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
850
160
80
750
200
75
40
Typ.
700
120
60
600
150
35
30
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 100nH
I
F
= 400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
1100
250
100
850
230
80
70
Typ.
900
200
85
700
180
55
55
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 100nH
I
F
= 400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
s-1
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
GP400LSS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical turn-on energy vs collector current
Fig. 6 Typical turn-off energy vs collector current
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25C
500
400
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125C
500
400
0
10
20
30
40
50
60
70
80
50
100
150
200
250
300
350
400
450
Collector current, I
C
- (A)
T
u
r
n-on energy
, E
on
- (mJ)
A : R
g
= 6.2
B : R
g
= 4.7
C : R
g
= 3.3
A
B
C
Conditions:
T
case
= 125C,
V
CE
= 600V,
V
GE
=
15V
0
10
20
30
40
50
60
70
80
90
50
100
150
200
250
300
350
400
0
Collector current, I
C
- (A)
T
urn-of
f
energy
, E
of
f
- (mJ)
B
A : R
g
= 6.2
B : R
g
= 4.7
C : R
g
= 3.3
A
C
Conditions:
T
case
= 125C,
V
CE
= 600V,
V
GE
= 15V
PDF 
ZIP