GP401LSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
The GP401LSS18 is a single switch 1800V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
FEATURES
s
n - Channel
s
Enhancement Mode
s
High Input Impedance
s
Optimised For High Power High Frequency Operation
s
Isolated Base
s
Ultra Low V
CE(sat)
s
400A Per Module
APPLICATIONS
s
High Power Switching
s
Motor Control
s
Inverters
s
Traction Systems
s
Lower Loss Systems Retrofits
KEY PARAMETERS
V
CES
1800V
V
CE(sat)
(typ) 2.6V
I
C70
(max) 400A
I
C(PK)80
(max) 800A
I
C25
(max) 600A
Fig.1 Electrical connections - (not to scale)
Fig.2 Single switch circuit diagram
Module outline type code: L
(See package details for further information)
ORDERING INFORMATION
Order As: GP401LSS18
Note: When ordering, please use the complete part number.
2(E)
3(G
1
)
1(C)
5(E
1
)
4(C
1
)
1
2
3
5
4
GP401LSS18
Powerline N-Channel Single Switch Low Loss IGBT Module
Preliminary Information
DS5288-1.3 January 2000
GP401LSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/11
Test Conditions
DC junction to case
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 25C unless stated otherwise.
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
DC, T
case
= 25C
DC, T
case
= 70C
1ms, T
case
= 80C (Transistor)
T
case
= 25C (Transistor)
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
A
W
V
Max.
1800
20
600
400
800
2980
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
42
80
15
125
125
125
5
2
Min.
-
-
-
-
-
40
-
-
GP401LSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, , T
case
= 125C
DC, T
case
= 55C
t
p
= 1ms, T
case
= 80C
I
F
= 400A
I
F
= 400A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
1
10
2
7.5
3.2
4.0
400
800
2.5
2.6
-
-
Typ.
-
-
-
-
2.6
3.3
-
-
2.2
2.3
45
15
Min.
-
-
-
4
-
-
-
-
-
-
-
-
GP401LSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
1100
350
200
650
400
180
85
Typ.
900
280
150
500
200
140
65
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.3
L ~ 100nH
I
F
= 400A, V
R
= 50% V
CES
,
dI
F
/dt = 2500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
T
case
= 25C unless stated otherwise.
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
Units
ns
ns
mJ
ns
ns
mJ
C
Max.
1200
500
230
800
400
260
115
Typ.
1010
390
180
660
310
210
90
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.3
L ~ 100nH
I
F
= 400A, V
R
= 50% V
CES
,
dI
F
/dt = 2500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case
= 25C unless stated otherwise.
GP401LSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
SWITCHING DEFINITIONS
t
1
t
2
t
3
t
4
10%
90%
10%
+15V
0V
V
ge
I
C
V
ce
-15V
t
5
t
6
t
7
I
C
V
ce
V
ge
90%
0V
-15V
+15V
90%
10%
Fig.3 Definition of turn-on switching times
Fig.4 Definition of turn-off switching times
E
on
=
V
ce
.I
c
dt
t
d(on)
= t
2
- t
1
t
r
= t
3
- t
2
t
4
+ 5
s
t
1
E
off
=
V
ce
.I
c
dt
t
d(off)
= t
6
- t
5
t
f
= t
7
- t
6
t
7
+ 20
s
t
5
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