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Электронный компонент: GP801DCM18

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GP801DCM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
FEATURES
s
Low V
CE(SAT)
s
800A Per Module
s
High Thermal Cycling Capability
s
Non Punch Through Silicon
s
Isolated MMC Base with AlN Substrates
APPLICATIONS
s
High Reliability
s
Motor Controllers
s
Traction Drives
s
Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP801DCM18 is an 1800V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module.
Designed with low V
CE(SAT)
to minimise conduction losses, the
module is of particular relevance in low to medium frequency
applications. The IGBT has a wide reverse bias safe operating
area (RBSOA) ensuring reliability in demanding applications.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DCM18
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
1800V
V
CE(sat)
(typ)
2.6V
I
C
(max)
800A
I
C(PK)
(max)
1600A
GP801DCM18
Hi-Reliability Chopper Switch Low V
CE(SAT)
IGBT Module
DS5365-3.0 January 2001
Fig. 1 Dual switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: D
(See Package Details for further information)
3(C
1
)
4(E
2
)
2(C
2
)
7(C
1
)
5(E
1
)
6(G
1
)
1(E
1
)
GPxxxDCxxx-xxx
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GP801DCM18
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
T
case
= 80C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
W
V
Max.
1800
20
800
1600
6940
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
18
40
8
150
125
125
5
2
10
Min.
-
-
-
-
-
40
-
-
-
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GP801DCM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
1
25
4
6.5
3.2
4
800
1600
2.5
2.6
-
-
Typ.
-
-
-
5.5
2.6
3.3
-
-
2.2
2.3
90
20
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
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GP801DCM18
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
1200
350
600
400
300
400
240
-
-
Typ.
1000
250
500
300
200
300
180
450
120
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
1400
400
700
550
350
550
400
-
-
Typ.
1200
300
600
400
250
450
300
525
190
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
background image
GP801DCM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com
TYPICAL CHARACTERISTICS
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25C
1000
800
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125C
1000
800
Fig.5 Typical switching energy vs collector current
0
800
100
200
Collector current, I
C
- (A)
0
100
700
Turn-on energy, E
ON
- (mJ)
T
case
= 125C
V
GE
= 15V
V
CE
= 800V
R
g
= 2.2
E
OFF
E
ON
E
REC
200
300
400
500
600
1000
800
900
300
400
500
600
700
Fig.6 Typical switching energy vs gate resistance
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
6
7
8
9
10
Gate resistance, R
G
- (Ohms)
Energy - (mJ)
E
ON
E
OFF
E
REC
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
I
C
= 800A