GP801FSM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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FEATURES
s
Low V
CE(SAT)
s
800A Per Switch
s
High Thermal Cycling Capability
s
Non Punch Through Silicon
s
Isolated MMC Base with AlN Substrates
APPLICATIONS
s
High Reliability
s
Motor Controllers
s
Traction Drives
s
Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
CE(SAT)
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801FSM18
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
1800V
V
CE(sat)
(typ)
2.6V
I
C
(max)
800A
I
C(PK)
(max)
1600A
GP801FSM18
Hi-Reliability Single Switch Low V
CE(SAT)
IGBT Module
DS5401-1.1 January 2001
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: F
(See Package Details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
External connection
External connection
C1
E1
C2
E2
G
Aux E
Aux C
GP801FSM18
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
T
case
= 80C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
W
V
Max.
1800
20
800
1600
6940
4000
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
18
40
8
150
125
125
5
2
10
Min.
-
-
-
-
-
40
-
-
-
GP801FSM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
Max.
1
25
4
6.5
3.2
4
800
1600
2.5
2.6
-
-
Typ.
-
-
-
5.5
2.6
3.3
-
-
2.2
2.3
90
20
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
GP801FSM18
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
1200
350
600
400
300
400
240
-
-
Typ.
1000
250
500
300
200
300
180
450
120
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
1400
400
700
550
350
550
400
-
-
Typ.
1200
300
600
400
250
450
300
525
190
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
GP801FSM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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TYPICAL CHARACTERISTICS
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 25C
1000
800
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125C
1000
800
Fig.5 Typical switching energy vs collector current
0
800
100
200
Collector current, I
C
- (A)
0
100
700
Turn-on energy, E
ON
- (mJ)
T
case
= 125C
V
GE
= 15V
V
CE
= 800V
R
g
= 2.2 Ohm
E
OFF
E
ON
E
REC
200
300
400
500
600
1000
800
900
300
400
500
600
700
Fig.6 Typical switching energy vs gate resistance
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
6
7
8
9
10
Gate resistance, R
G
- (Ohms)
Energy - (mJ)
E
ON
E
OFF
E
REC
T
case
= 125C
V
GE
= 15V
V
CE
= 900V
I
C
= 800A
GP801FSM18
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig.7 Diode typical forward characteristics
0
200
400
600
800
1000
1200
1400
1600
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, V
F
- (V)
Fo
w
ar
d
current, I
F
- (A)
T
j
= 125C
T
j
= 25C
Fig.8 Reverse bias safe operating area
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
400
800
1200
1600
2000
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125C
V
ge
=
15V
R
g(min)
= 2.2
Fig.9 Forward bias safe operating area
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
50s
100s
I
C
max. (single pulse)
I
C
ma
x.
D
C (continu
ous)
t
p
= 1ms
Conditions:
T
vj
= 125C, Tcase = 80C
0.1
1
10
100
1
10
1000
100
10000
Pulse width, t
p
- (ms)
Transient thermal impe
d
ance,
Z
th (
j
-c)
- (
C/
kW
)
Diode
Transistor
Fig.10 Transient thermal impedance
GP801FSM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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Fig.11 3-Phase inverter operating frequency
0
400
600
800
1000
1200
1400
1600
1800
200
1
10
30
f
max
- (kHz)
Inverter phase current, I
C(
PK
)
- (A)
Conditions:
T
j
= 125C, T
case
= 75C
R
g
= 2.2
, V
CC
= 900V
PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1
Fig.12 DC current rating vs case temperature
0
200
400
600
800
1000
1200
1400
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (C)
D
C collector current, I
C
- (A)
GP801FSM18
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
140
31.5
4x M8
28
5
38
6x M4
18.5
11
35
14.5
20
43.3
18
57
57
65
65
6x 7
15
15
2.5
16
C1
E1
C2
E2
G
Aux E
Aux C
6
5
62
62
Nominal weight: 1050g
Module outline type code: F
GP801FSM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/10
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ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers
AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
GP801FSM18
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS5401-1 Issue No. 1.1 January 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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