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FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (Non Toxic) Isolation Medium
s
Integral Water Cooled Heatsink
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP03TT300-XX W1
With 1/4 BSP connection
MP03TT300-XX W2
1/4 18 NPT connection
MP03TT300-XX W3
1/4 18 NPT connection
MP03TT300-XX W3A
1/4 18 NPT water connection thread
MP03TT300-XX W4
With 1/4 BSP connection
XX shown in the part number about represents V
DRM
/100
selection required, e.g. MP03TT300-16-W3
Note: When ordering, please use the whole part number.
Auxiliary gate and cathode leads can be ordered separately.
KEY PARAMETERS
V
DRM
1800V
I
T(AV)
310A
I
TSM(per arm)
8100A
I
T(RMS)
490A
V
isol
3000V
MP03TT300
Dual Thyristor Water Cooled Module
Preliminary Information
DS5428-1.1 June 2001
1800
1700
1600
1500
MP03TT300-18
MP03TT300-17
MP03TT300-16
MP03TT300-15
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 30mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Lower voltage grades available
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
Fig. 1 Circuit diagram
Fig. 2 Electrical connections - (not to scale)
(See package details for further information)
G
1
K
1
K
2
G
2
1
2
3
Outline type code:
MP03 - W1 or W2
Outline type code:
MP03 - W3 or W4
Outline type code: MP03 - W3A
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Test Conditions
Half wave resistive load,
T
water (in)
= 25C
4.5 Ltr/min
T
water (in)
= 40C
T
water (in)
= 50C
T
water (in)
= 25C @ 4.5 Ltr/min
T
water (in)
= 40C @ 4.5 Ltr/min
10ms half sine, T
j
= 125C
V
R
= 0
10ms half sine, T
j
= 125C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
360
310
280
565
490
8.1
0.33x10
6
6.5
0.21x10
6
3000
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M4
-
Parameter
Thermal resistance - junction to water
(per thyristor)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Symbol
R
th(j-w)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.175
0.185
0.195
125
125
-
9(80)
Refer to
drawing
Min.
-
-
-
-
40
5(44)
8(70
-
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Units
mA
V/
s
A/
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 500A, gate source 10V, 5
t
r
= 0.5
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
30
1000
500
0.93
0.67
Min.
-
-
-
-
-
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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Fig. 6 Transient thermal impedance - dc
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 125C)
Fig. 5 Gate characteristics
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, V
T
- (V)
0
400
800
1200
1600
Measured under pulse conditions
Instantaneous on-state current, I
T
- (A)
200
600
1000
1400
T
j
= 125C
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1
10
1
2
3 4 5
50
ms
Cycles at 50Hz
Duration
150
200
250
300
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t =
2
x t
2
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
Gate trigger voltage, V
GT
- (V)
100
W
50W
20W
10W
5W
Region of
certain triggering
Upper l
imit 95%
Lower limit 5%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
Table gives pulse power P
GM
in Watts
Pulse width
s
20
25
100
500
1ms
10ms
Frequency Hz
50
100
100
100
100
100
10
100
100
100
100
100
50
-
400
100
100
100
25
12.5
-
10
1
0.1
1000
100
0.01
0.001
Time - (s)
1.0
0.1
0.01
0.001
Thermal resistance (junction to water). R
th(j-w)
- (
C/W)
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Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 9 Maximum permissible water inlet temperature vs
on-state current at specified conduction angles,
sine wave 50/60Hz
Fig. 10 Maximum permissible water inlet temperature vs
on-state current at specified conduction angles,
square wave 50/60Hz
0
200
400
600
800
Mean on-state current, I
T(AV)
- (A)
0
400
800
1200
1800
On-state power loss per device - (W)
200
600
1000
1400
1600
Conduction Angle 30
60
90
180
120
0
200
400
600
800
Mean on-state current, I
T(AV)
- (A)
0
200
400
600
1200
On-state power loss per device - (W)
100
300
500
700
900
800
1000
1100
Conduction Angle 30
60
dc
90
180
120
0
100
200
300
400
500
Mean on-state current, I
T(AV)
- (A)
0
20
40
60
120
Max. permissible water inlet temperature - (
C @ 4.5 l/min)
10
30
50
70
90
80
110
100
60 90
180
120
Conduction
Angle 30
0
100
200
300
400
500
Mean on-state current, I
T(AV)
- (A)
0
20
40
60
120
Max. permissible water inlet temperature - (
C @ 4.5 l/min)
10
30
50
70
90
80
110
100
60 90
180
dc
120
Conduction Angle
30
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Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible water inlet temperature for
specified values of heatsink thermal resistance
Fig. 12 Fig. 11 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible water inlet
temperature for specified values of heatsink thermal resistance
0
20
40
60
80
100
120
140 0
1000
Max. water inlet temperature - (C)
DC output current - (A)
0
400
800
1200
2400
Total power loss - (W)
200
600
1000
1400
1800
1600
2200
2000
100 200 300 400 500 600 700 800 900
Resistive load
Inductive load
0
20
40
60
80
100
120
140 0
1000
Max. water inlet temperature - (C)
DC output current - (A)
0
400
800
1200
2400
Total power loss - (W)
200
600
1000
1400
1800
1600
2200
2000
100 200 300 400 500 600 700 800 900
Resistive load
or
Inductive load
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Recommended fixings for mounting: M5 socket head cap screws
Nominal weight: 1100g
Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.
Module outline type code: MP03-W1 and W2
28.5
5
6.5
5
5
35
38
41
50
18
42.5
5.5
M8
80
92
Fast on tabs
2.8 x 0.8
G1
K1
K2
G2
1
2
3
61
25
19
27.5
37
Thread size:
W1 : 1/4 BSP connection
W2 : 1/4 18 NPT connection
MP03TT300
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Recommended fixings for mounting: M5 socket head cap screws
Nominal weight: 1100g
Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.
Module outline type code: MP03-W3 and W4
28.5
5
6.5
5
5
35
38
41
50
18
42.5
5.5
M8
80
92
Fast on tabs
2.8 x 0.8
G1
K1
K2
G2
1
2
3
9
61
19
27.5
37
Thread size:
W3 : 1/4 18 NPT connection
W4 : 1/4 BSP connection
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Recommended fixings for mounting: M5 socket head cap screws
Nominal weight: 1300g
Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.
Module outline type code: MP03-W3A
28.5
5
6.5
5
5
35
38
47.4
50
18
42.5
5.5
M8
80
92
Fast on tabs
2.8 x 0.8
G1
K1
K2
G2
1
2
3
10.37
67.4
25.4
20.6
50.8
Thread size:
W3A : 1/4 18 NPT connection thread
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POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS5428-1 Issue No. 1.1 June 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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