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MP04HB910
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (Non-toxic) Isolation Medium
APPLICATIONS
s
Power Supplies
s
Large IGBT Circuit 'Front Ends'
s
Rectifiers
s
Battery Chargers
VOLTAGE RATINGS
KEY PARAMETERS
V
RRM
3000V
I
F(AV)
915A
I
FSM (per arm)
20000A
I
F(RMS)
1440A
V
isol
3000V
3000
2800
2600
2400
MP04HB910-30
MP04HB910-28
MP04HB910-26
MP04HB910-24
Conditions
T
vj
= 40 to 150C,
V
RSM
= V
RRM
+ 100V
Lower voltage grades available
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
Fig.1 HB circuit configuration
ORDERING INFORMATION
Order As:
MP04HB910-XX
XX shown in the part number about represents V
RRM
/100
selection required.
Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.
1
2
3
MP04HB910
Dual Rectifier Diode Module
Preliminary Information
DS5425-1.2 February 2001
Fig. 2 Electrical connections - (not to scale)
Outline type code: MP04
(See package details for further information)
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MP04HB910
Half wave resistive load
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.060
Halfwave
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-
Thermal resistance - junction to case
(per diode)
R
th(j-c)
Symbol
Parameter
Screw torque
6 (53)
-
Nm (lb.ins)
40
150
o
C
Reverse (blocking)
-
150
o
C
3 Phase
-
0.066
o
C/W
-
0.056
o
C/W
Symbol
Parameter
Conditions
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
Units
Max.
915
A
T
case
= 85
o
C
830
A
T
case
= 100
o
C
695
A
T
case
= 75
o
C
1440
A
T
case
= 85
o
C
1305
A
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 75
o
C
10ms half sine; T
j
= 150
o
C
V
R
= 0
10ms half sine; T
j
= 150
o
C
V
R
= 50% V
RRM
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
1.28 x 10
6
A
2
s
16
kA
2.0 x 10
6
A
2
s
20
kA
V
isol
Isolation voltage
3000
V
Commoned terminals to base plate AC RMS, 1 min, 50Hz
Mounting
-
-
12 (106) Nm (lb.ins)
Electrical connections
-
1580
g
-
-
Weight (nominal)
T
case
= 100
o
C
1090
A
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MP04HB910
Note 1:
The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in
the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.
CHARACTERISTICS
Peak reverse current
Parameter
C
1600
At T
vj
= 150C
-
Q
S
Total stored charge
I
F
= 1000A, dI
RR
/dt = 3A/
s
T
case
= 150C, V
R
= 100V
Symbol
I
RRM
I
RR
Peak recovery current
V
TO
Threshold voltage. See Note 1.
r
T
Slope resistance. See Note 1.
0.29
m
At T
vj
= 150C
-
0.7
V
-
85
A
-
At V
RRM
, T
case
= 150
o
C
-
50
mA
Conditions
Min.
Max.
Units
CURVES
Fig.3 Maximum (limit) forward characteristics
0.5
0.75
1.0
1.5
1.25
Instantaneous forward voltage V
F
- (V)
0
500
1000
1500
2000
2500
Instantaneous forward current I
F
- (A)
Measured under pulse
conditions
T
j
= 25C
T
j
= 150C
Fig.4 Power dissipation curves
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
200
400
600
800
1000 1200 1400 1600 1800
Forward current, (Average, per arm) I
F(AV)
- (A)
Power dissipation (Watts, per arm)
30
60
90
120
180
DC
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MP04HB910
Fig.5 Maximum stored charge
0.1
1.0
10
100
Rate of decay of on-state current dI
F
/dt - (A/s)
10000
1000
100
Stored charge Q
S
- (
C)
Conditions:
T
j
= 150C
V
R
= 100V
I
F
= 1000A
I
RR
I
F
dI
F
/dt
Q
S
Fig.6 Maximum reverse recovery current
1.0
10
100
Rate of decay of forward current dI
F
/dt - (A/s)
1000
100
10
Reverse current I
RR
- (A)
Conditions:
T
j
= 175C
V
R
= 100V
I
F
= 1000A
Fig.7 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
@ T
c
- 150C)
1
10
1
2
3
5
10 20
50
0
5
10
15
20
25
30
35
0.8
0.9
0.7
1.0
1.1
I
2
t value - (A
2
s x 10
6
)
ms
Cycles at 50Hz
Duration
Peak half sine forward current - (kA)
I
2
t =
2
x t
2
1.2
1.3
I
2
t
1.4
Fig.8 Transient thermal impedance - dc
0
0.01
0.02
0.03
0.04
0.05
0.06
0.001
0.01
0.1
1
10
100
1000
Time - (Seconds)
Thermal resistance, R
th(j-c)
- (
C/W)
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MP04HB910
Fig.9 Maximum permissible case temperature vs forward
current per arm at various conduction angles, 50/60Hz
0
10
20
30
40
50
60
70
80
90
200
400
600
800
1000
1200
1400
1600
Forward current (Average, per arm), I
F(AV)
- (A)
Maximum permissble case temperature - (
C)
30
60
90
120
180
DC
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MP04HB910
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Recommended fixings for mounting: M6 socket head cap screws.
Nominal weight: 1580g
Module outline type code: MP04
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MP04HB910
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS5425-1 Issue No. 1.2 February 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
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