FAST RECOVERY 200 NANOSECOND
SILICON RECTIFIER
RC
SMALL SIZE
LOW LEAKAGE
HIGH TEMPERATURE STABILITY
HIGH SURGE CAPABILITY
ELECTRICAL CHARACTERISTICS(at
T =25 C Unless Otherwise Specified)
A
NOTE:
Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 C
Average Rectif ied Forward Current @ 50
o
C, I
O
1 Amp
Max. Peak Surge Current , I
FSM
(8.3
ms)
50 Amp
Max. Forward Voltage Drop @ 1
Amp,
V
F
1.4V olts
Max. DC Reverse Current @ P RV and 25
o
C, I
R
1
Max. DC Reverse Current @ PRV and100
o
C, I
R
50
Ambient Operating Temperature Range, T
A
-55
o
C to +150
o
C
Storage Temperature Range, T
STG
-55
o
C to +175
o
C
EDI
Type
PRV
Volts
Maximum Reverse
RECOVERY TIME
IN NANOSECONDS
(Fig.4)
RC05
50
200
RC10
100
200
RC20
200
200
RC40
400
200
RC60
600
200
RC80
800
200
RC100
1000
200
A
A
o
Trr (Reverse Recovery time), Fig. 4
200 nanosec Max
125nanosec Typical
1.0A
0.5A
T RR
ZERO
REFERENCE
0.25A
R R
1, 2 NON-INDUCTIVE RESISTORS
PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV
.
I KC REP.RATE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
1.0 MIN.
.380 MAX.
1.0 MIN.
100
75
50
25
0
0
25
50
75
100
125
150
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
FIG.2
NON-REPETITIVE SURGE CURRENT
100
75
50
25
0
1
2
3
4
5
6
7
9 10
20
30
40 50 60
8
CYCLES(60 Hz)
RC
FIG.3
21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828
ELECTRONIC DEVICES, INC.
DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
AMBIENT TEMPERATURE
O
( C)
.030
.033
DIA.
.160 MAX.
TEST CIRCUIT
FIG.4
TYPICAL REVERSE RECOVERY WAVEFORM
EDI
reserves the right to change these specifications at any time whthout notice.
0.1SEC
1.0SEC
%
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PULSE
GENERATOR
D.U.T.
SCOPE
R
2
1 OHM
R1
50 OHM
+
-
E
e-mail:sales@edidiodes.com
W
website:http:// www.edidiodes.com
*
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