ChipFind - документация

Электронный компонент: BR5002W

Скачать:  PDF   ZIP
BR5000W - BR5010W
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
BR 5000W
BR 5001W
BR 5002W
BR 5004W
BR 5006W
BR 5008W
BR 5010W
UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc=55
C
I
F(AV)
50
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
I
FSM
400
Amps.
Current Squared Time at t < 8.3 ms.
I
2
t
664
A
2
S
Maximum Forward Voltage per Diode at I
F
= 25 Amps.
V
F
1.1
Volts
Maximum DC Reverse Current Ta = 25
C
I
R
10
A
at Rated DC Blocking Voltage Ta = 100
C
I
R(H)
200
A
Typical Thermal Resistance at Junction to Case ( Note 1 )
R
JC
1.0
C/W
Operating Junction Temperature Range
T
J
- 40 to + 150
C
Storage Temperature Range
T
STG
- 40 to + 150
C
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on heat sink.
UPDATE : APRIL 21, 1998
RATING
Dimensions in inches and ( millimeters )
BR50W
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
0.470 (11.9)
0.430 (10.9)
1.2 (30.5)
MIN.
0.21 (5.3)
0.20 (5.1)
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
RATING AND CHARACTERISTIC CURVES ( BR5000W - BR5010W )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
CASE TEMPERATURE, (
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
FORWARD VOLTAGE, VOLTS
30
20
10
60
50
100
10
1.0
400
0
600
0
300
200
100
0.1
10
80
0.01
0.01
1.0
0.1
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT
AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT, MICROAMPERES
T
J
= 25
C
Pulse Width = 300
s
1 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
T
J
= 50
C
T
J
= 100
C
T
J
= 25
C
40
500
10
20
60
1
2
4
6
40
100
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6
5
0
5
0
5
0
5
0
5
0
5
0
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND