RBV1000 - RBV1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
1000
RBV
1001
RBV
1002
RBV
1004
RBV
1006
RBV
1008
RBV
1010
UNIT
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Current Tc = 55
C
I
F(AV)
10
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
I
FSM
300
Amps.
Current Squared Time at t < 8.3 ms.
I
2
t
160
A
2
S
Maximum Forward Voltage per Diode at I
F
= 5.0 Amps.
V
F
1.0
Volts
Maximum DC Reverse Current Ta = 25
C
I
R
10
A
at Rated DC Blocking Voltage Ta = 100
C
I
R(H)
200
A
Typical Thermal Resistance (Note 1)
R
JC
2.5
C/W
Operating Junction Temperature Range
T
J
- 40 to + 150
C
Storage Temperature Range
T
STG
- 40 to + 150
C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998
RATING
RBV25
Dimensions in millimeters
C3
4.9
0.2
3.9
0.2
~
3.2
0.1
~
11
0.2
17.5
0.5
20
0.3
0.7
0.1
1.0
0.1
2.0
0.2
30
0.3
7.5
0.2
10
0.2
+
7.5
0.2
13.5
0.3
RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
CASE TEMPERATURE, (
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
FORWARD VOLTAGE, VOLTS
8
6
4
2
12
100
10
1.0
200
0
300
0
150
100
50
0.1
10
80
0.01
0.01
1.0
0.1
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT
AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
T
J
= 25
C
Pulse Width = 300
s
1 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
T
J
= 50
C
T
J
= 100
C
T
J
= 25
C
10
250
10
20
60
1
2
4
6
40
100
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm)
Al.-FINNED PLATE
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