Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a "controlled document". Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
2001 Elantec Semiconductor, Inc.
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
General Description
The EL5420C and EL5220C are low power, high voltage, rail-to-rail
input-output amplifiers. The EL5220C contains two amplifiers in one
package, and the EL5420C contains four amplifiers. Operating on sup-
plies ranging from 5V to 15V, while consuming only 500A per
amplifier, the EL5420C and EL5220C have a bandwidth of 12MHz
--
(-3dB). They also provide common mode input ability beyond the sup-
ply rails, as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply voltage.
The EL5420C and EL5220C also feature fast slewing and settling
times, as well as a high output drive capability of 30mA (sink and
source). These features make these amplifiers ideal for use as voltage
reference buffers in Thin Film Transistor Liquid Crystal Displays
(TFT-LCD). Other applications include battery power, portable
devices, and anywhere low power consumption is important.
The EL5420C is available in a space-saving 14-pin TSSOP package,
the industry-standard 14-pin SO package, as well as a 16-pin LPP
package. The EL5220C is available in the 8-pin MSOP package. Both
feature a standard operational amplifier pin out. These amplifiers are
specified for operation over the full -40C to +85C temperature
range.
Connection Diagrams
1
2
3
4
8
7
6
5
-
+
-
+
VS-
VS+
VINA+
VINA-
VOUTA
VOUTB
VINB-
VINB+
EL5220C
(8-Pin MSOP)
Connection Diagrams are continued on page 4
1
2
3
4
14
13
12
11
5
6
7
10
9
8
-
+
-
+
-
+
-
+
EL5420C
(14-Pin TSSOP & 14-Pin SO)
VS-
VS+
VINB+
VINB-
VOUTB
VINA+
VINA-
VOUTA
VINC+
VINC-
VOUTC
VIND+
VIND-
VOUTD
Features
12MHz -3dB bandwidth
Supply voltage = 4.5V to 16.5V
Low supply current (per amplifier)
= 500A
High slew rate = 10V/s
Unity-gain stable
Beyond the rails input capability
Rail-to-rail output swing
Ultra-small package
Applications
TFT-LCD drive circuits
Electronics notebooks
Electronics games
Touch-screen displays
Personal communication devices
Personal digital assistants (PDA)
Portable instrumentation
Sampling ADC amplifiers
Wireless LANs
Office automation
Active filters
ADC/DAC buffer
Ordering Information
Part No.
Package
Tape &
Reel
Outline #
EL5220CY
8-Pin MSOP
-
MDP0043
EL5220CY-T7
8-Pin MSOP
7"
MDP0043
EL5220CY-T13
8-Pin MSOP
13"
MDP0043
EL5420CL
16-Pin LPP
-
MDP0046
EL5420CL-T7
16-Pin LPP
7"
MDP0046
EL5420CL-T13
16-Pin LPP
13"
MDP0046
EL5420CR
14-Pin TSSOP
-
MDP0044
EL5420CR-T7
14-Pin TSSOP
7"
MDP0044
EL5420CR-T13
14-Pin TSSOP
13"
MDP0044
EL5420CS
14-Pin SO
-
MDP0027
EL5420CS-T7
14-Pin SO
7"
MDP0027
EL5420CS-T13
14-Pin SO
13"
MDP0027
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
S
e
p
t
e
m
b
e
r
1
9
,
2
0
0
1
2
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Absolute Maximum Ratings
(T
A
= 25C)
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only
and functional device operation is not implied
Supply Voltage between V
S
+ and V
S
-
+18V
Input Voltage
V
S
- - 0.5V, V
S
+0.5V
Maximum Continuous Output Current
30mA
Maximum Die Temperature
+125C
Storage Temperature
-65C to +150C
Operating Temperature
-40C to +85C
Power Dissipation
See Curves
ESD Voltage
2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Characteristics
V
S
+= +5V, V
S
- = -5V, R
L
= 10k
and C
L
= 10pF to 0V, T
A
= 25C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
Unit
Input Characteristics
V
OS
Input Offset Voltage
V
CM
= 0V
2
12
mV
TCV
OS
Average Offset Voltage Drift
[1]
5
V/C
I
B
Input Bias Current
V
CM
= 0V
2
50
nA
R
IN
Input Impedance
1
G
C
IN
Input Capacitance
1.35
pF
CMIR
Common-Mode Input Range
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
for V
IN
from -5.5V to +5.5V
50
70
dB
A
VOL
Open-Loop Gain
-4.5V
V
OUT
+
4.5V
75
95
dB
Output Characteristics
V
OL
Output Swing Low
I
L
= -5mA
-4.92
-4.85
V
V
OH
Output Swing High
I
L
= 5mA
4.85
4.92
V
I
SC
Short Circuit Current
120
mA
I
OUT
Output Current
30
mA
Power Supply Performance
PSRR
Power Supply Rejection Ratio
V
S
is moved from 2.25V to 7.75V
60
80
dB
I
S
Supply Current (Per Amplifier)
No load
500
750
A
Dynamic Performance
SR
Slew Rate
[2]
-4.0V
V
OUT
+
4.0V, 20% to 80%
10
V/s
t
S
Settling to +0.1% (A
V
= +1)
(A
V
= +1), V
O
= 2V step
500
ns
BW
-3dB Bandwidth
R
L
= 10k
, C
L
= 10pF
12
MHz
GBWP
Gain-Bandwidth Product
R
L
= 10k
, C
L
= 10pF
8
MHz
PM
Phase Margin
R
L
= 10k
, C
L
= 10 pF
50
CS
Channel Separation
f = 5MHz
75
dB
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Electrical Characteristics
V
S
+ = 5V, V
S
-= 0V, R
L
= 10k
and C
L
= 10pF to 2.5V, T
A
= 25C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
Unit
Input Characteristics
V
OS
Input Offset Voltage
V
CM
= 2.5V
2
10
mV
TCV
OS
Average Offset Voltage Drift
[1]
5
V/C
I
B
Input Bias Current
V
CM
= 2.5V
2
50
nA
R
IN
Input Impedance
1
G
C
IN
Input Capacitance
1.35
pF
CMIR
Common-Mode Input Range
-0.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
for V
IN
from -0.5V to +5.5V
45
66
dB
A
VOL
Open-Loop Gain
0.5V
V
OUT
+
4.5V
75
95
dB
Output Characteristics
V
OL
Output Swing Low
I
L
= -5mA
80
150
mV
V
OH
Output Swing High
I
L
= +5mA
4.85
4.92
V
I
SC
Short Circuit Current
120
mA
I
OUT
Output Current
30
mA
Power Supply Performance
PSRR
Power Supply Rejection Ratio
V
S
is moved from 4.5V to 15.5V
60
80
dB
I
S
Supply Current (Per Amplifier)
No load
500
750
A
Dynamic Performance
SR
Slew Rate
[2]
1V
V
OUT
4V, 20% to 80%
10
V/s
t
S
Settling to +0.1% (A
V
= +1)
(A
V
= +1), V
O
= 2V step
500
ns
BW
-3dB Bandwidth
R
L
= 10k
, C
L
= 10pF
12
MHz
GBWP
Gain-Bandwidth Product
R
L
= 10 k
, C
L
= 10pF
8
MHz
PM
Phase Margin
R
L
= 10 k
, C
L
= 10 pF
50
CS
Channel Separation
f = 5MHz
75
dB
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
Electrical Characteristics
V
S
+ = 15V, V
S
- = 0V, R
L
= 10k
and C
L
= 10pF to 7.5V, T
A
= 25C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
Unit
Input Characteristics
V
OS
Input Offset Voltage
V
CM
= 7.5V
2
14
mV
TCV
OS
Average Offset Voltage Drift
[1]
5
V/C
I
B
Input Bias Current
V
CM
= 7.5V
2
50
nA
R
IN
Input Impedance
1
G
C
IN
Input Capacitance
1.35
pF
CMIR
Common-Mode Input Range
-0.5
+15.5
V
CMRR
Common-Mode Rejection Ratio
for V
IN
from -0.5V to +15.5V
53
72
dB
A
VOL
Open-Loop Gain
0.5V
V
OUT
14.5V
75
95
dB
Output Characteristics
V
OL
Output Swing Low
I
L
= -5mA
80
150
mV
V
OH
Output Swing High
I
L
= +5mA
14.85
14.92
V
4
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Connection Diagrams (Continued)
I
SC
Short Circuit Current
120
mA
I
OUT
Output Current
30
mA
Power Supply Performance
PSRR
Power Supply Rejection Ratio
V
S
is moved from 4.5V to 15.5V
60
80
dB
I
S
Supply Current (Per Amplifier)
No load
500
750
A
Dynamic Performance
SR
Slew Rate
[2]
1V
V
OUT
14V, 20% to 80%
10
V/s
t
S
Settling to +0.1% (A
V
= +1)
(A
V
= +1), V
O
= 2V step
500
ns
BW
-3dB Bandwidth
R
L
= 10k
, C
L
= 10pF
12
MHz
GBWP
Gain-Bandwidth Product
R
L
= 10k
, C
L
= 10pF
8
MHz
PM
Phase Margin
R
L
= 10k
, C
L
= 10 pF
50
CS
Channel Separation
f = 5MHz
75
dB
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
Electrical Characteristics (Continued)
V
S
+ = 15V, V
S
- = 0V, R
L
= 10k
and C
L
= 10pF to 7.5V, T
A
= 25C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
Unit
1
2
3
4
12
11
10
9
5
6
7
8
1
6
1
5
1
4
1
3
VINA-
VINA+
VS+
VINB+
V
I
N
B
-
V
O
U
T
B
V
O
U
T
C
V
I
N
C
-
N
C
V
O
U
T
A
V
O
U
T
D
N
C
VIND-
VIND+
VS-
VINC+
EL5420C
(16-Pin LPP)
Thermal Pad
5
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Typical Performance Curves
EL5420C Input Offset Voltage Distribution
400
1200
Q
u
a
n
t
i
t
y
(
A
m
p
l
i
f
i
e
r
s
)
Input Offset Voltage (mV)
0
-
1
2
1800
1600
800
200
1400
1000
600
-
1
0
-
8
-
6
-
4
-
2
-
0
2
4
6
8
1
0
1
2
V
S
=5V
T
A
=25C
Input Offset Voltage Drift, TCV
OS
(V/C)
1
3
5
7
9
1
1
1
3
1
5
1
7
1
9
2
1
10
50
Q
u
a
n
t
i
t
y
(
A
m
p
l
i
f
i
e
r
s
)
0
70
30
60
40
20
EL5420C Input Offset Voltage Drift
V
S
=5V
Input Bias Current vs Temperature
0.0
I
n
p
u
t
B
i
a
s
C
u
r
r
e
n
t
(
n
A
)
Temperature (C)
-2.0
2.0
Output Low Voltage vs Temperature
-4.95
-4.93
O
u
t
p
u
t
L
o
w
V
o
l
t
a
g
e
(
V
)
-4.97
-4.91
0
150
50
-50
100
0
150
Temperature (C)
50
-50
100
-4.92
-4.94
-4.96
V
S
=5V
I
OUT
=-5mA
V
S
=5V
Output High Voltage vs Temperature
4.94
4.95
O
u
t
p
u
t
H
i
g
h
V
o
l
t
a
g
e
(
V
)
4.93
4.97
0
150
Temperature (C)
50
-50
100
4.96
V
S
=5V
I
OUT
=5mA
Input Offset Voltage vs Temperature
0
150
0
5
I
n
p
u
t
O
f
f
s
e
t
V
o
l
t
a
g
e
(
m
V
)
Temperature (C)
-5
50
-50
100
10
V
S
=5V
Typical
Production
Distribution
Typical
Production
Distribution
6
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Typical Performance Curves
Open-Loop Gain vs Temperature
80
90
O
p
e
n
-
L
o
o
p
G
a
i
n
(
d
B
)
100
0
150
Temperature (C)
50
-50
100
V
S
=5V
R
L
=10k
EL5420C Supply Current per Amplifier vs Supply Voltage
5
20
400
600
S
u
p
p
l
y
C
u
r
r
e
n
t
(
A
)
Supply Voltage (V)
300
10
0
700
500
15
T
A
=25C
Slew Rate vs Temperature
0
150
10.30
10.35
S
l
e
w
R
a
t
e
(
V
/
S
)
Temperature (C)
10.25
50
-50
100
10.40
EL5420C Supply Current per Amplifier vs Temperature
0.5
0.55
S
u
p
p
l
y
C
u
r
r
e
n
t
(
m
A
)
0.45
0
150
Temperature (C)
50
-50
100
V
S
=5V
Frequency Response for Various R
L
1M
100M
-5
0
M
a
g
n
i
t
u
d
e
(
N
o
r
m
a
l
i
z
e
d
)
(
d
B
)
Frequency (Hz)
-15
10M
100k
5
-10
10k
1k
560
150
Open Loop Gain and Phase vs Frequency
10
10k
100M
50
200
Frequency (Hz)
-50
G
a
i
n
(
d
B
)
P
h
a
s
e
(
)
20
-130
-230
100
1k
100k
1M
10M
150
0
100
-30
-80
-180
V
S
=5V
V
S
=5V, T
A
=25C
R
L
=10K
to GND
C
L
=12pF to GND
Phase
Gain
C
L
=10pF
A
V
=1
V
S
=5V
7
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Typical Performance Curves
1M
100M
Frequency (Hz)
10M
100k
0
10
M
a
g
n
i
t
u
d
e
(
N
o
r
m
a
l
i
z
e
d
)
(
d
B
)
-30
20
-20
-10
Frequency Response for Various C
L
R
L
=10k
A
V
=1
V
S
=5V
Closed Loop Output Impedance vs Frequency
O
u
t
p
u
t
I
m
p
e
d
a
n
c
e
(
)
Frequency (Hz)
10k
100
0
40
80
120
200
1M
160
10M
A
V
=1
V
S
=5V
T
A
=25C
Maximum Output Swing vs Frequency
M
a
x
i
m
u
m
O
u
t
p
u
t
S
w
i
n
g
(
V
P
-
P
)
Frequency (Hz)
10k
100
0
2
4
12
1M
6
10M
V
S
=5V
T
A
=25C
A
V
=1
R
L
=10k
C
L
=12pF
Distortion <1%
8
10
CMRR vs Frequency
100
0
C
M
R
R
(
d
B
)
Frequency (Hz)
80
60
40
20
1M
10M
10k
100k
V
S
=5V
T
A
=25C
1k
PSRR vs Frequency
100
0
P
S
R
R
(
d
B
)
Frequency (Hz)
80
60
40
20
1M
10M
10k
100k
V
S
=5V
T
A
=25C
1k
PSRR+
PSRR-
Input Voltage Noise Spectral Density vs Frequency
100
100k
100M
10
100
V
o
l
t
a
g
e
N
o
i
s
e
(
n
V
H
z
)
Frequency (Hz)
1
10M
1k
10k
1M
600
12pF
50pF
100pF
1000pF
8
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Typical Performance Curves
V
S
=5V
T
A
=25C
A
V
=1
R
L
=10k
C
L
=12pF
Large Signal Transient Response
1k
10k
100k
0.005
0.008
Total Harmonic Distortion + Noise vs Frequency
Frequency (Hz)
T
H
D
+
N
(
%
)
Channel Separation vs Frequency Response
1k
-60
X
-
T
a
l
k
(
d
B
)
Frequency (Hz)
-140
-120
-100
-80
0.010
0.001
0.003
1M
6M
10k
100k
V
S
=5V
R
L
=10k
A
V
=1
V
IN
=220mV
RMS
V
S
=5V
R
L
=10k
A
V
=1
V
IN
=1V
RMS
0.006
0.009
0.007
0.004
0.002
10
100
1000
Small-Signal Overshoot vs Load Capacitance
Load Capacitance (pF)
O
v
e
r
s
h
o
o
t
(
%
)
V
S
=5V
A
V
=1
R
L
=10k
V
IN
=50mV
T
A
=25C
50
90
70
30
10
Settling Time vs Step Size
800
-2
2
S
t
e
p
S
i
z
e
(
V
)
Settling Time (nS)
600
0
4
200
400
3
1
-3
0
-1
-4
V
S
=5V
A
V
=1
R
L
=10k
C
L
=12pF
T
A
=25C
V
S
=5V
T
A
=25C
A
V
=1
R
L
=10k
C
L
=12pF
Small Signal Transient Response
Dual measured Channel A to B
Quad measured Channel A to D or B to C
Other combinations yield improved rejection
0.1%
0.1%
1V
1S
50mV
200ns
9
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Pin Descriptions
EL5420C
EL5220C
Pin Name
Pin Function
Equivalent Circuit
1
1
VOUTA
Amplifier A Output
Circuit 1
2
2
VINA-
Amplifier A Inverting Input
Circuit 2
3
3
VINA+
Amplifier A Non-Inverting Input
(Reference Circuit 2)
4
8
VS+
Positive Power Supply
5
5
VINB+
Amplifier B Non-Inverting Input
(Reference Circuit 2)
6
6
VINB-
Amplifier B Inverting Input
(Reference Circuit 2)
7
7
VOUTB
Amplifier B Output
(Reference Circuit 1)
8
VOUTC
Amplifier C Output
(Reference Circuit 1)
9
VINC-
Amplifier C Inverting Input
(Reference Circuit 2)
10
VINC+
Amplifier C Non-Inverting Input
(Reference Circuit 2)
11
4
VS-
Negative Power Supply
12
VIND+
Amplifier D Non-Inverting Input
(Reference Circuit 2)
13
VIND-
Amplifier D Inverting Input
(Reference Circuit 2)
14
VOUTD
Amplifier D Output
(Reference Circuit 1)
V
S+
GND
V
S-
V
S+
V
S-
10
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Applications Information
Product Description
The EL5220C and EL5420C voltage feedback amplifi-
ers are fabricated using a high voltage CMOS process.
They exhibit rail-to-rail input and output capability, they
are unity gain stable, and have low power consumption
(500A per amplifier). These features make the
EL5220C and EL5420C ideal for a wide range of gen-
eral-purpose applications. Connected in voltage follower
mode and driving a load of 10k
and 12pF, the
EL5220C and EL5420C have a -3dB bandwidth of
12MHz while maintaining a 10V/s slew rate. The
EL5220C is a dual amplifier while the EL5420C is a
quad amplifier.
Operating Voltage, Input, and Output
The EL5220C and EL5420C are specified with a single
nominal supply voltage from 5V to 15V or a split supply
with its total range from 5V to 15V. Correct operation is
guaranteed for a supply range of 4.5V to 16.5V. Most
EL5220C and EL5420C specifications are stable over
both the full supply range and operating temperatures of
-40 C to +85 C. Parameter variations with operating
voltage and/or temperature are shown in the typical per-
formance curves.
The input common-mode voltage range of the EL5220C
and EL5420C extends 500mV beyond the supply rails.
The output swings of the EL5220C and EL5420C typi-
cally extend to within 80mV of positive and negative
supply rails with load currents of 5mA. Decreasing load
currents will extend the output voltage range even closer
to the supply rails. Figure 1 shows the input and output
waveforms for the device in the unity-gain configura-
tion. Operation is from 5V supply with a 10k
load
connected to GND. The input is a 10V
P-P
sinusoid. The
output voltage is approximately 9.985V
P-P
.
Figure 1. Operation with Rail-to-Rail Input and
Output
Short Circuit Current Limit
The EL5220C and EL5420C will limit the short circuit
current to 120mA if the output is directly shorted to the
positive or the negative supply. If an output is shorted
indefinitely, the power dissipation could easily increase
such that the device may be damaged. Maximum reli-
ability is maintained if the output continuous current
never exceeds 30 mA. This limit is set by the design of
the internal metal interconnects.
Output Phase Reversal
The EL5220C and EL5420C are immune to phase rever-
sal as long as the input voltage is limited from (V
S
-)
----
-0.5V to (V
S
+) +0.5V. Figure 2 shows a photo of the
output of the device with the input voltage driven
beyond the supply rails. Although the device's output
will not change phase, the input's overvoltage should be
avoided. If an input voltage exceeds supply voltage by
more than 0.6V, electrostatic protection diodes placed in
the input stage of the device begin to conduct and over-
voltage damage could occur.
V
S
=5V
T
A
=25C
A
V
=1
V
IN
=10V
P-P
O
u
t
p
u
t
I
n
p
u
t
11
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Figure 2. Operation with Beyond-the-Rails
Input
Power Dissipation
With the high-output drive capability of the EL5220C
and EL5420C amplifiers, it is possible to exceed the
125C "absolute-maximum junction temperature" under
certain load current conditions. Therefore, it is important
to calculate the maximum junction temperature for the
application to determine if load conditions need to be
modified for the amplifier to remain in the safe operating
area.
The maximum power dissipation allowed in a package is
determined according to:
where:
T
JMAX
= Maximum Junction Temperature
T
AMAX
= Maximum Ambient Temperature
JA
= Thermal Resistance of the Package
P
DMAX
= Maximum Power Dissipation in the Package
The maximum power dissipation actually produced by
an IC is the total quiescent supply current times the total
power supply voltage, plus the power in the IC due to the
loads, or:
when sourcing, and:
when sinking.
where
i = 1 to 2 for Dual and 1 to 4 for Quad
V
S
= Total Supply Voltage
I
SMAX
= Maximum Supply Current Per Amplifier
V
OUT
i = Maximum Output Voltage of the Application
I
LOAD
i = Load Current
If we set the two P
DMAX
equations equal to each other,
we can solve for R
LOAD
i to avoid device overheat. Fig-
ures 3, 4, and 5 provide a convenient way to see if the
device will overheat. The maximum safe power dissipa-
tion can be found graphically, based on the package type
and the ambient temperature. By using the previous
equation, it is a simple matter to see if P
DMAX
exceeds
the device's power derating curves. To ensure proper
operation, it is important to observe the recommended
derating curves in Figures 3, 4, and 5.
Figure 3. Package Power Dissipation vs
Ambient Temperature
V
S
=2.5V
T
A
=25C
A
V
=1
V
IN
=6V
P-P
1V
100s
1V
PDMAX
TJMAX TAMAX
JA
------------------------------------------------
=
P
DMAX
i
V
S
I
SMAX
V
S
+
(
V
OUT
i
)
I
LOAD
i
+
[
]
=
P
DMAX
i
V
S
I
SMAX
V
OUT
i
(
V
S
-
)
I
LOAD
i
+
[
]
=
400
800
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
m
W
)
Ambient Temperature (C)
0
0
1200
MAX T
J
=125C
1000
600
200
TSSOP14
JA
=100C/W
25
50
75
100
125
150
85
JEDEC JESD51-7 High Effective Thermal Conductivity (4-
Layer) Test Board
LPP exposed diepad soldered to PCB per JESD51-5
1.136W
SO14
JA
=88C/W
1.0W
870mW
MSOP8
JA
=115C/W
12
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
Figure 4. Package Power Dissipation vs
Ambient Temperature
Figure 5. Package Power Dissipation vs
Ambient Temperature
Unused Amplifiers
It is recommended that any unused amplifiers in a dual
and a quad package be configured as a unity gain fol-
lower. The inverting input should be directly connected
to the output and the non-inverting input tied to the
ground plane.
Driving Capacitive Loads
The EL5220C and EL5420C can drive a wide range of
capacitive loads. As load capacitance increases, how-
ever, the -3dB bandwidth of the device will decrease and
the peaking increase. The amplifiers drive 10pF loads in
parallel with 10k
with just 1.5dB of peaking, and
100pF with 6.4dB of peaking. If less peaking is desired
in these applications, a small series resistor (usually
between 5
and 50
) can be placed in series with the
output. However, this will obviously reduce the gain
slightly. Another method of reducing peaking is to add a
"snubber" circuit at the output. A snubber is a shunt load
consisting of a resistor in series with a capacitor. Values
of 150
and 10nF are typical. The advantage of a snub-
ber is that it does not draw any DC load current or
reduce the gain
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5220C and EL5420C can provide gain at high
frequency. As with any high-frequency device, good
printed circuit board layout is necessary for optimum
performance. Ground plane construction is highly rec-
ommended, lead lengths should be as short as possible
and the power supply pins must be well bypassed to
reduce the risk of oscillation. For normal single supply
operation, where the V
S
- pin is connected to ground, a
0.1F ceramic capacitor should be placed from V
S
+ to
pin to V
S
- pin. A 4.7F tantalum capacitor should then
be connected in parallel, placed in the region of the
amplifier. One 4.7F capacitor may be used for multiple
devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are
to be used.
MAX T
J
=125C
606mW
833mW
400
800
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
m
W
)
Ambient Temperature (C)
0
0
1200
1000
600
200
25
50
75
100
125
150
85
SO14
JA
=120C/W
MSOP8
JA
=206C/W
JEDEC JESD51-3 and SEMI G42-88 (Single Layer) Test
Board
667mW
485mW
TSSOP14
JA
=165C/W
LPP16
JA
=150C/W
JEDEC JESD51-7 High Effective Thermal Conductivity (4-
Layer) Test Board
(LPP exposed diepad soldered to PCB per JESD51-5)
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
Ambient Temperature (C)
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
85
2.500W
LPP
16
40
C/W
13
EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
E
L
5
2
2
0
C
,
E
L
5
4
2
0
C
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the cir-
cuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to sup-
port or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users con-
templating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elan-
tec, Inc.'s warranty is limited to replacement of defective
components and does not cover injury to persons or property or
other consequential damages.
S
e
p
t
e
m
b
e
r
1
9
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2
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1
Printed in U.S.A.
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
(888) ELANTEC
Fax:
(408) 945-9305
European Office: +44-118-977-6020
Japan Technical Center: +81-45-682-5820
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