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Электронный компонент: EBE41RE4ABHA-6E-E

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Document No. E0880E10 (Ver. 1.0)
Date Published March 2006 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2006
PRELIMINARY DATA SHEET
4GB Registered DDR2 SDRAM DIMM
EBE41RE4ABHA
(512M words
72 bits, 2 Ranks)
Specifications
Density: 4GB
Organization
512M words
72 bits, 2 ranks
Mounting 36 pieces of 1G bits DDR2 SDRAM with
sFBGA
Package: 240-pin socket type dual in line memory
module (DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free (RoHS compliant)
Power supply: VDD
=
1.8V
0.1V
Data rate: 667Mbps/533Mbps/400Mbps (max.)
Eight internal banks for concurrent operation
(components)
Interface: SSTL_18
Burst lengths (BL): 4, 8
/CAS Latency (CL): 3, 4, 5
Precharge: auto precharge operation for each burst
access
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8
s at 0
C
TC
+
85
C
3.9
s at
+
85
C
<
TC
+
95
C
Operating case temperature range
TC = 0
C to +95
C
Features
Double-data-rate architecture; two data transfers per
clock cycle
The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
referenced to both edges of DQS
Posted /CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
/DQS can be disabled for single-ended Data Strobe
operation
1 piece of PLL clock driver, 2 pieces of register driver
and 1 piece of serial EEPROM (2K bits EEPROM) for
Presence Detect (PD)
EBE41RE4ABHA
Preliminary Data Sheet E0880E10 (Ver. 1.0)
2
Ordering Information


Part number

Data rate
Mbps (max.)
Component
JEDEC speed bin*
1
(CL-tRCD-tRP)


Package

Contact
pad


Mounted devices
EBE41RE4ABHA-6E-E 667
DDR2-667
(5-5-5)
EBE41RE4ABHA-5C-E 533
DDR2-533
(4-4-4)
EBE41RE4ABHA-4A-E 400
DDR2-400
(3-3-3)
240-pin DIMM
(lead-free)
Gold
1G bits DDR2 SDRAM*
2
Notes: 1. Module /CAS latency = component CL + 1.
2. Please refer to 1Gb DDR2 datasheet (E0852E) for electrical characteristics.
Pin Configurations
1 pin
Front side
Back side
64 pin 65 pin
120 pin
121 pin
184 pin 185 pin
240 pin
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1 VREF
61 A4 121 VSS 181 VDD
2 VSS 62 VDD 122 DQ4 182 A3
3 DQ0 63 A2 123 DQ5 183 A1
4 DQ1 64 VDD 124 VSS 184 VDD
5 VSS 65 VSS 125 DQS9
185 CK0
6 /DQS0
66 VSS 126 /DQS9
186 /CK0
7 DQS0
67 VDD 127 VSS 187 VDD
8 VSS 68 NC,
Par
_
In 128
DQ6
188
A0
9 DQ2 69 VDD 129 DQ7 189 VDD
10 DQ3 70 A10
130 VSS 190 BA1
11 VSS 71 BA0 131 DQ12 191 VDD
12 DQ8 72 VDD 132 DQ13 192 /RAS
13 DQ9 73 /WE 133 VSS 193 /CS0
14 VSS 74 /CAS 134 DQS10
194 VDD
15 /DQS1
75 VDD 135 /DQS10
195 ODT0
16 DQS1 76 /CS1 136 VSS 196 A13
17 VSS 77 ODT1 137 NC 197 VDD
18 /RESET
78 VDD 138 NC 198 VSS
19 NC 79 VSS 139 VSS 199 DQ36
20 VSS 80
DQ32 140 DQ14 200 DQ37
21 DQ10 81
DQ33 141 DQ15 201 VSS
22 DQ11
82 VSS 142 VSS 202 DQS13
23 VSS 83 /DQS4
143 DQ20 203 /DQS13
24 DQ16 84 DQS4 144 DQ21 204 VSS
25 DQ17
85 VSS 145 VSS 205 DQ38
26 VSS 86 DQ34 146 DQS11
206 DQ39
27 /DQS2
87 DQ35 147 /DQS11
207 VSS
EBE41RE4ABHA
Preliminary Data Sheet E0880E10 (Ver. 1.0)
3
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
28 DQS2
88 VSS 148 VSS 208 DQ44
29 VSS 89
DQ40 149 DQ22 209 DQ45
30 DQ18 90
DQ41 150 DQ23 210 VSS
31 DQ19
91 VSS 151 VSS 211 DQS14
32 VSS 92 /DQS5
152 DQ28 212 /DQS14
33 DQ24 93 DQS5 153 DQ29 213 VSS
34 DQ25
94 VSS 154 VSS 214 DQ46
35 VSS 95 DQ42 155 DQS12
215 DQ47
36 /DQS3
96 DQ43 156 /DQS12
216 VSS
37 DQS3
97 VSS 157 VSS 217 DQ52
38 VSS 98
DQ48 158 DQ30 218 DQ53
39 DQ26 99
DQ49 159 DQ31 219 VSS
40 DQ27
100 VSS 160 VSS 220 NC
41 VSS 101 SA2 161 CB4 221 NC
42 CB0 102 NC 162 CB5 222 VSS
43 CB1 103 VSS 163 VSS 223 DQS15
44 VSS 104 /DQS6
164 DQS17
224 /DQS15
45 /DQS8
105 DQS6 165 /DQS17
225 VSS
46 DQS8 106 VSS
166 VSS 226 DQ54
47 VSS 107 DQ50 167 CB6 227 DQ55
48 CB2 108 DQ51 168 CB7 228 VSS
49 CB3 109 VSS 169 VSS 229 DQ60
50 VSS 110 DQ56 170 VDD 230 DQ61
51 VDD 111 DQ57 171 CKE1 231 VSS
52 CKE0 112 VSS 172 VDD 232 DQS16
53 VDD 113 /DQS7
173 NC 233 /DQS16
54 BA2 114 DQS7 174 NC 234 VSS
55 NC,
/Err
_
Out 115
VSS
175
VDD
235
DQ62
56 VDD 116 DQ58 176 A12 236 DQ63
57 A11 117 DQ59 177 A9 237 VSS
58 A7 118 VSS 178 VDD 238 VDDSPD
59 VDD 119 SDA 179 A8 239 SA0
60 A5 120 SCL 180 A6 240 SA1
EBE41RE4ABHA
Preliminary Data Sheet E0880E10 (Ver. 1.0)
4
Pin Description
Pin name
Function
A0 to A13
Address input
Row address
A0 to A13
Column address
A0 to A9, A11
A10 (AP)
Auto precharge
BA0, BA1, BA2
Bank select address
DQ0 to DQ63
Data input/output
CB0 to CB7
Check bit (Data input/output)
/RAS
Row address strobe command
/CAS
Column address strobe command
/WE Write
enable
/CS0, /CS1
Chip select
CKE0, CKE1
Clock enable
CK0 Clock
input
/CK0 Differential
clock
input
DQS0 to DQS17, /DQS0 to /DQS17
Input and output data strobe
SCL
Clock input for serial PD
SDA
Data input/output for serial PD
SA0 to SA2
Serial address input
VDD
Power for internal circuit
VDDSPD
Power for serial EEPROM
VREF
Input reference voltage
VSS Ground
ODT0, ODT1
ODT control
/RESET
Reset pin (forces register and PLL inputs low) *
1
Par
_
In*
2
Parity bit for the address and control bus
/Err
_
Out*
2
Parity error found on the address and control bus
NC No
connection
Notes: 1. Reset pin is connected to both OE of PLL and reset to register.
2.
NC,
/Err
_
Out (Pin No. 55) and NC, Par
_
In (Pin No. 68) are for optional function to check address and
command parity.
EBE41RE4ABHA
Preliminary Data Sheet E0880E10 (Ver. 1.0)
5
Serial PD Matrix
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex
value Comments
0
Number of bytes utilized by module
manufacturer
1 0 0 0 0 0 0 0 80H
128
bytes
1
Total number of bytes in serial PD
device
0 0 0 0 1 0 0 0 08H
256
bytes
2
Memory
type
0 0 0 0 1 0 0 0 08H
DDR2
SDRAM
3
Number
of
row
address
0 0 0 0 1 1 1 0 0EH
14
4
Number
of
column
address
0 0 0 0 1 0 1 1 0BH
11
5
Number
of
DIMM
ranks
0 1 1 1 0 0 0 1 71H
Stack/2
ranks
6
Module
data
width
0 1 0 0 1 0 0 0 48H
72
7
Module
data
width
continuation
0 0 0 0 0 0 0 0 00H
0
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
1
05H
SSTL 1.8V
9
DDR SDRAM cycle time, CL = 5
-6E
0 0 1 1 0 0 0 0 30H
3.0ns*
1
-5C
0 0 1 1 1 1 0 1 3DH
3.75ns*
1
-4A
0 1 0 1 0 0 0 0 50H
5.0ns*
1
10
SDRAM access from clock (tAC)
-6E
0 1 0 0 0 1 0 1 45H
0.45ns*
1
-5C
0 1 0 1 0 0 0 0 50H
0.5ns*
1
-4A
0 1 1 0 0 0 0 0 60H
0.6ns*
1
11
DIMM
configuration
type
0 0 0 0 0 0 1 0 02H
ECC
12
Refresh
rate/type
1 0 0 0 0 0 1 0 82H
7.8
s
13
Primary
SDRAM
width
0 0 0 0 0 1 0 0 04H
4
14
Error
checking
SDRAM
width
0 0 0 0 0 1 0 0 04H
4
15
Reserved
0 0 0 0 0 0 0 0 00H
0
16
SDRAM device attributes:
Burst length supported
0 0 0 0 1 1 0 0 0CH
4,8
17
SDRAM device attributes: Number of
banks on SDRAM device
0 0 0 0 1 0 0 0 08H
8
18
SDRAM device attributes:
/CAS latency
0 0 1 1 1 0 0 0 38H
3,
4,
5
19
DIMM
Mechanical
Characteristics
0 0 0 0 0 0 1 0 02H
5.1mm
max.
20
DIMM
type
information
0 0 0 0 0 0 0 1 01H
Registered
21
SDRAM
module
attributes
0 0 0 0 0 0 0 0 00H
Normal
22
SDRAM device attributes: General
0
0
0
0
0
0
1
1
03H
Weak Driver
50
ODT
Support
23
Minimum clock cycle time at CL = 4
-6E, -5C
0 0 1 1 1 1 0 1 3DH
3.75ns*
1
-4A
0 1 0 1 0 0 0 0 50H
5.0ns*
1
24
Maximum data access time (tAC) from
clock at CL = 4
-6E, -5C
0 1 0 1 0 0 0 0 50H
0.5ns*
1
-4A
0 1 1 0 0 0 0 0 60H
0.6ns*
1
25
Minimum clock cycle time at CL = 3
0
1
0
1
0
0
0
0
50H
5.0ns*
1
26
Maximum data access time (tAC) from
clock at CL = 3
0 1 1 0 0 0 0 0 60H
0.6ns*
1
27
Minimum row precharge time (tRP)
0
0
1
1
1
1
0
0
3CH
15ns
28
Minimum row active to row active delay
(tRRD)
0 0 0 1 1 1 1 0 1EH
7.5ns