Document Outline

COVER
Description
Features
Ordering Information
Part Number
Pin Configuration
Pin Description
Block Diagram
1. General Description
2. Packet Format
3. Field Encoding Summary
4. DQ Packet Timing
5. COLM Packet to D Packet Mapping
6. ROW-to-ROW Packet Interaction
7. ROW-to-COL Packet Interaction
8. COL-to-COL Packet Interaction
9. COL -to-ROW Packet Interaction
10. ROW-to-ROW Examples
11. Row and Column Cycle Description
12. Precharge Mechanisms
13. Read Transaction - Example
14. Write Transaction - Example
15. Write/Retire - Examples
16. Interleaved Write - Example
17. Interleaved Read - Example
18. Interleaved RRWW - Example
19. Control Register Transactions
20. Control Register Packets
21. Initialization
22. Control Register Summary
23. Power State Management
24. Refresh
25. Current and Temperature Control
26. Electrical Conditions
27. Timing Conditions
28. Electrical Characteristics
29. Timing Characteristics
30. RSL Clocking
31. RSL - Receive Timing
32. RSL - Transmit Timing
33. CMOS - Receive Timing
34. CMOS - Transmit Timing
35. RSL - Domain Crossing Window
36. Timing Parameters
37. Absolute Maximum Ratings
38. IDD - Supply Current Profile
39. Capacitance and Inductance
40. Interleaved Device Mode
41. Glossary of Terms
42. Package Drawing
43. Recommended Soldering Conditions

Document No. E0260E40 (Ver. 4.0)
Date Published April 2003 (K) Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2002-2003

PRELIMINARY DATA SHEET

288M bits Direct Rambus

DRAM

EDR2518ABSE (512K words

×
×
×
×

18 bits

×
×
×
×

32s banks)

Description

The EDR2518AB (Direct RDRAM

) is a general

purpose high-performance memory device suitable for
use in a broad range of applications including
computer memory, graphics, video, and any other
application where high bandwidth and low latency are
required.
The EDR2518AB is 1066MHz 288Mbits Direct Rambus
DRAM (RDRAM

), organized as 16M words by 18 bits.

The use of Rambus Signaling Level (RSL) technology
permits 800MHz to 1066MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data
transfers at 0.9375ns per two bytes (7.5ns per sixteen
bytes).
The architecture of the Direct RDRAM devices allows
the highest sustained bandwidth for multiple,
simultaneous randomly addressed memory
transactions.
The separate control and data buses with independent
row and column control yield over 95% bus efficiency.
The Direct RDRAM devices 32 banks support up to
four simultaneous transactions.
System oriented features for mobile, graphics and
large memory systems include power management,
byte masking.
It is offered in a CSP horizontal package suitable for
desktop as well as low-profile add-in card and mobile
applications. Direct RDRAM devices operate from a
2.5V

supply.

Features

Highest sustained bandwidth per DRAM device

-- 2.1 GB/s sustained data transfer rate
-- Separate control and data buses for maximized
efficiency
-- Separate row and column control buses for easy
scheduling and highest performance
-- 32 banks: four transactions can take place
simultaneously at full bandwidth data rates

Low latency features

-- Write buffer to reduce read latency
-- 3 precharge mechanisms for controller flexibility
-- Interleaved transactions

Advanced power management:

-- Multiple low power states allows flexibility in power
consumption versus time to active state
-- Power-down self-refresh

Organization: 2K bytes pages and 32 banks, x 18

Uses Rambus Signaling Level (RSL) for up to

1066MHz operation

FBGA (

BGA

)

package is Sn-Pb or lead free

solder (Sn-Ag-Cu)

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Pin Description

Signal

Input / Output

Type

#pins

Description

SIO0, SIO1

Input / Output CMOS

Note1

Serial input/output. Pins for reading from and writing to the control registers using

a serial access protocol. Also used for power management.

CMD Input

CMOS

Note1

Command input. Pins used in conjunction with SIO0 and SIO1 for reading from

and writing to the control registers. Also used for power management.

SCK Input

CMOS

Note1

Serial clock input. Clock source used for reading from and writing to the control

registers.

Supply voltage for the RDRAM core and interface logic.

DDa

Supply voltage for the RDRAM analog circuitry.

CMOS

Supply voltage for CMOS input/output pins.

GND

Ground reference for RDRAM core and interface.

GND

Ground reference for RDRAM analog circuitry.

DQA8..DQA0

Input / Output RSL

Note2

Data byte A. Nine pins which carry a byte of read or write data between the

Channel and the RDRAM.

CFM Input

RSL

Note2

Clock from master. Interface clock used for receiving RSL signals from the

Channel. Positive polarity.

CFMN Input

RSL

Note2

Clock from master. Interface clock used for receiving RSL signals from the

Channel. Negative polarity.

REF

Logic threshold reference voltage for RSL signals.

CTMN Input

RSL

Note2

Clock to master. Interface clock used for transmitting RSL signals to the Channel.

Negative polarity.

CTM Input

RSL

Note2

Clock to master. Interface clock used for transmitting RSL signals to the Channel.

Positive polarity.

ROW2..ROW0 Input RSL

Note2

Row access control. Three pins containing control and address information for

row accesses.

COL4..COL0 Input

RSL

Note2

Column access control. Five pins containing control and address information for

column accesses.

DQB8..DQB0

Input / Output RSL

Note2

Data byte B. Nine pins which carry a byte of read or write data between the

Channel and the RDRAM.

Total pin count per package

Notes 1. All CMOS signals are high-true ; a high voltage is a logic one and a low voltage is logic zero.

2. All RSL signals are low-true ; a low voltage is a logic one and a high voltage is logic zero.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Block Diagram

ROP

COP

XOP

Packet Decode

Control Registers

DEVID

REFR

PRER

PREX

PREC

RD, WR

ACT

ROWR

ROWA

Packet Decode

COLM

COLC

COLX

1:8 Demux

RCLK

RQ7..RQ5 or

ROW2..ROW0

SCK, CMD

SIO0, SIO1

1:8 Demux

RCLK

RQ4..RQ0 or
COL4..COL0

TCLK

CTM

DQB8..DQB0

DQA8..DQA0

CTMN

RCLK

CFM CFMN

Power Modes

RCLK

TCLK

1:8 Demux

Write Buffer

8:1 Mux

TCLK

8:1 Mux

RCLK

1:8 Demux

Write Buffer

Write

Buffer

Bank 0

Bank 1

Bank 2

Bank 13

Bank 14

Bank 15

Bank 16

Bank 17

Bank 18

Bank 29

Bank 30

Bank 31

SAmp

Internal DQA Data Path

Internal DQB Data Path

Sense Amp

64x72

DRAM Core

512x128x144

Column Decode & Mask

Match

XOP Decode

Mux

Row Decode

Mux

SAmp

0/1

SAmp

1/2

SAmp

13/14

SAmp

14/15

SAmp

16/17

SAmp

17/18

SAmp

29/30

SAmp

30/31

SAmp

30/31

SAmp

29/30

SAmp

17/18

SAmp

16/17

SAmp

14/15

SAmp

13/14

SAmp

1/2

SAmp

0/1

SAmp

64x72

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

CONTENTS

1. General Description................................................................................................................................................. 8

2. Packet Format ........................................................................................................................................................ 10

3. Field Encoding Summary...................................................................................................................................... 12

4. DQ Packet Timing .................................................................................................................................................. 14

5. COLM Packet to D Packet Mapping ..................................................................................................................... 14

6. ROW-to-ROW Packet Interaction.......................................................................................................................... 16

7. ROW-to-COL Packet Interaction ........................................................................................................................... 18

8. COL-to-COL Packet Interaction ............................................................................................................................ 19

9. COL-to-ROW Packet Interaction ........................................................................................................................... 20

10. ROW-to-ROW Examples...................................................................................................................................... 21

11. Row and Column Cycle Description .................................................................................................................. 22

12. Precharge Mechanisms....................................................................................................................................... 23

13. Read Transaction - Example............................................................................................................................... 25

14. Write Transaction - Example............................................................................................................................... 26

15. Write/Retire - Examples....................................................................................................................................... 27

16. Interleaved Write - Example ................................................................................................................................ 29

17. Interleaved Read - Example ................................................................................................................................ 30

18. Interleaved RRWW - Example ............................................................................................................................. 31

19. Control Register Transactions ........................................................................................................................... 32

20. Control Register Packets .................................................................................................................................... 33

21. Initialization .......................................................................................................................................................... 34

22. Control Register Summary ................................................................................................................................. 38

23. Power State Management ................................................................................................................................... 47

24. Refresh ................................................................................................................................................................. 52

25. Current and Temperature Control ...................................................................................................................... 54

26. Electrical Conditions ........................................................................................................................................... 55

27. Timing Conditions ............................................................................................................................................... 56

28. Electrical Characteristics .................................................................................................................................... 58

29. Timing Characteristics ........................................................................................................................................ 58

30. RSL Clocking ....................................................................................................................................................... 59

31. RSL - Receive Timing .......................................................................................................................................... 60

32. RSL - Transmit Timing......................................................................................................................................... 61

33. CMOS - Receive Timing....................................................................................................................................... 62

34. CMOS - Transmit Timing ..................................................................................................................................... 64

35. RSL - Domain Crossing Window ........................................................................................................................ 65

36. Timing Parameters .............................................................................................................................................. 66

37. Absolute Maximum Ratings................................................................................................................................ 67

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

1. General Description

The figure on page 5 is a block diagram of the EDR2518ABSE. It consists of two major blocks : a "core" block built

from banks and sense amps similar to those found in other types of DRAM, and a Direct Rambus interface block

which permits an external controller to access this core at up to 2.1 GB/s.

Control Registers: The CMD, SCK, SIO0, and SIO1 pins appear in the upper center of the block diagram. They are

used to write and read a block of control registers. These registers supply the RDRAM device configuration

information to a controller and they select the operating modes of the device. The nine bit REFR value is used for

tracking the last refreshed row. Most importantly, the five bits DEVID specifies the device address of the RDRAM

device on the Channel.

Clocking: The CTM and CTMN pins (Clock-To-Master) generate TCLK (Transmit Clock), the internal clock used to

transmit read data. The CFM and CFMN pins (Clock-From-Master) generate RCLK (Receive Clock), the internal

clock signal used to receive write data and to receive the ROW and COL pins.

DQA, DQB Pins: These 18 pins carry read (Q) and write (D) data across the Channel. They are multiplexed

de-

multiplexed from

to two 72-bit data paths (running at one-eighth the data frequency) inside the RDRAM device.

Banks: The 32 Mbyte core of the RDRAM device is divided into 32 one-Mbyte banks, each organized as 512 rows,

with each row containing 128 dualocts (2K bytes), and each dualoct containing 16 bytes. A dualoct is the smallest

unit of data that can be addressed.

Sense Amps: The RDRAM device contains 34 sense amps. Each sense amp consists of 1,024 bytes of fast storage

(512 for DQA and 512 for DQB) and can hold one-half of one row of one bank of the RDRAM device. The sense amp

may hold any of the 512 half-rows of an associated bank. However, each sense amp is shared between two

adjacent banks of the RDRAM device. This introduces the restriction that adjacent banks may not be simultaneously

accessed.

RQ Pins: These pins carry control and address information. They are broken into two groups. RQ7..RQ5 are also

called ROW2..ROW0, and are used primarily for controlling row accesses. RQ4..RQ0 are also called COL4..COL0,

and are used primarily for controlling column accesses.

ROW Pins: The principle use of these three pins is to manage the transfer of data between the banks and the sense

amps of the RDRAM device. These pins are de-multiplexed into a 24-bit ROWA (row-activate) or ROWR (row-

operation) packet.

COL Pins: The principle use of these five pins is to manage the transfer of data between the DQA/DQB pins and the

sense amps of the RDRAM device. These pins are de-multiplexed into a 23-bit COLC (column-operation) packet and

either a 17-bit COLM (mask) packet or a 17-bit COLX (extended-operation) packet.

ACT Command: An ACT (activate) command from an ROWA packet causes one of the 512 rows of the selected

bank to be loaded to its associated sense amps (two 512 byte sense amps for DQA and two for DQB).

PRER Command: A PRER (precharge) command from an ROWR packet causes the selected bank to release its

two associated sense amps, permitting a different row in that bank to be activated, or permitting adjacent banks to be

activated.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

RD Command: The RD (read) command causes one of the 128 dualocts of one of the sense amps to be transmitted

on the DQA/DQB pins of the Channel.

WR Command: The WR (write) command causes a dualoct received from the DQA/DQB data pins of the Channel to

be loaded into the write buffer. There is also space in the write buffer for the BC bank address and C column

address information. The data in the write buffer is automatically retired (written with optional bytemask) to one of the

128 dualocts of one of the sense amps during a subsequent COP command. A retire can take place during a RD,

WR, or NOCOP to another device, or during a WR or NOCOP to the same device. The write buffer will not retire

during a RD to the same device. The write buffer reduces the delay needed for the internal DQA/DQB data path turn-

around.

PREC Precharge: The PREC, RDA and WRA commands are similar to NOCOP, RD and WR, except that a precharge

operation is performed at the end of the column operation. These commands provide a second mechanism for

performing precharge.

PREX Precharge: After a RD command, or after a WR command with no byte masking (M=0), a COLX packet may

be used to specify an extended operation (XOP). The most important XOP command is PREX. This command

provides a third mechanism for performing precharge.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

2. Packet Format

Figure 2-1 shows the formats of the ROWA and ROWR packets on the ROW pins. Table 2-1 describes the fields

which comprise these packets. DR4T and DR4F bits are encoded to contain both the DR4 device address bit and a

framing bit which allows the ROWA or ROWR packet to be recognized by the RDRAM device.

The AV (ROWA/ROWR packet selection) bit distinguishes between the two packet types. Both the ROWA and

ROWR packet provide a five bit device address and a four bit bank address. An ROWA packet uses the remaining

bits to specify a nine bit row address, and the ROWR packet uses the remaining bits for an eleven bit opcode field.

Note the use of the "RsvX" notation to reserve bits for future address field extension.

Figure 2-1 also shows the formats of the COLC, COLM, and COLX packets on the COL pins. Table 2-2 describes

the fields which comprise these packets.

The COLC packet uses the S (Start) bit for framing. A COLM or COLX packet is aligned with this COLC packet, and

is also framed by the S bit.

The 23 bit COLC packet has a five bit device address, a four bit bank address, a six bit column address, and a four

bit opcode. The COLC packet specifies a read or write command, as well as some power management commands.

The remaining 17 bits are interpreted as a COLM (M=1) or COLX (M=0) packet. A COLM packet is used for a

COLC write command which needs bytemask control. The COLM packet is associated with the COLC packet from a

time t

RTR

earlier. An COLX packet may be used to specify an independent precharge command. It contains a five bit

device address, a four bit bank address, and a five bit opcode. The COLX packet may also be used to specify some

housekeeping and power management commands. The COLX packet is framed within a COLC packet but is not

otherwise associated with any other packet.

Table 2-1 Field Description for ROWA Packet and ROWR Packet

Field Description

DR4T, DR4F

Bits for framing (recognizing) a ROWA or ROWR packet. Also encodes highest device address bit.

DR3..DR0

Device address for ROWA or ROWR packet.

BR4..BR0

Bank address for ROWA or ROWR packet. RsvB denotes bits ignored by the RDRAM device.

Selects between ROWA packet (AV=1) and ROWR packet (AV=0).

R8..R0

Row address for ROWA packet. RsvR denotes bits reserved for future row address extension.

ROP10..ROP0

Opcode field for ROWR packet. Specifies precharge, refresh, and power management functions.

Table 2-2 Field Description for COLC Packet, COLM Packet, and COLX Packet

Field Description

Bit for framing (recognizing) a COLC packet, and indirectly for framing COLM and COLX packets.

DC4..DC0

Device address for COLC packet.

BC4..BC0

Bank address for COLC packet. RsvB denotes bits reserved for future extension (controller drivers 0's).

C6..C0

Column address for COLC packet.

COP3..COP0

Opcode field for COLC packet. Specifies read, write, precharge, and power management functions.

Selects between COLM packet (M=1) and COLX packet (M=0).

MA7..MA0

Bytemask write control bits. 1=write, 0=no-write. MA0 controls the earliest byte on DQA8..0.

MB7..MB0

Bytemask write control bits. 1=write, 0=no-write. MB0 controls the earliest byte on DQB8..0.

DX4..DX0

Device address for COLX packet.

BX4..BX0

Bank address for COLX packet. RsvB denotes bits reserved for future extension (controller drivers 0's).

XOP4..XOP0

Opcode field for COLX packet. Specifies precharge, I

control, and power management functions.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 2-1 Packet Formats

CTM/CFM

COL4

COL3

COL2

COL1

COL0

MA7 MA5 MA3 MA1

M=1 MA6 MA4 MA2 MA0

MB7 MB4 MB1

MB6 MB3 MB0

MB5 MB2

CTM/CFM

ROW2

DR4T DR2 BR0 BR3 RsvR

ROW1

DR4F DR1 BR1 BR4 RsvR

ROW0

DR3 DR0 BR2 RsvB AV=1

ACT a0

PREX d0

MSK (b1)

PRER c0

WR b1

CTM/CFM

COL4

DC4

S=1

COL3

DC3

COL2

DC2 COP1

RsvB BC2

DC1 COP0

BC4 BC1

DC0 COP2

COP3 BC3 BC0

COL1

COL0

CTM/CFM

ROW2

ROW1

ROW0

CTM/CFM

COL4

COL3

COL2

COL1

COL0

ROP2

DR4T DR2 BR0 BR3

ROP10

ROP8ROP5

DR4F DR1 BR1 BR4 ROP9ROP7ROP4ROP1

DR3 DR0 BR2 RsvB AV=0 ROP6ROP3ROP0

DX4 XOP4 RsvB BX1

M=0 DX3 XOP3 BX4 BX0

DX2 XOP2 BX3

DX1 XOP1 BX2

DX0 XOP0

ROWA Packet

COLM Packet

COLC Packet

COLX Packet

ROWR Packet

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

PACKET

S=1

Notes 1. The COLM is associated with a previous COLC, and is aligned with the present COLC, indicated
by the Start bit (S=1) position.

2. The COLX is aligned with the present COLC, indicates by the Start bit (S=1) position.

Note1

Note2

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

3. Field Encoding Summary

Table 3-1 shows how the six device address bits are decoded for the ROWA and ROWR packets. The DR4T and

DR4F encoding merges a fifth device bit with a framing bit. When neither bit is asserted, the device is not selected.

Note that a broadcast operation is indicated when both bits are set. Broadcast operation would typically be used for

refresh and power management commands. If the device is selected, the DM (DeviceMatch) signal is asserted and

an ACT or ROP command is performed.

Table 3-1 Device Field Encodings for ROWA Packet and ROWR Packet

DR4T

DR4F

Device Selection

Device Match signal (DM)

All devices (broadcast)

DM is set to 1

One device selected

DM is set to 1 if {DEVID4..DEVID0} == {0, DR3..DR0} else DM is set to 0

One device selected

DM is set to 1 if {DEVID4..DEVID0} == {1, DR3..DR0} else DM is set to 0

No packet present

DM is set to 0

Table 3-2 shows the encodings of the remaining fields of the ROWA and ROWR packets. An ROWA packet is

specified by asserting the AV bit. This causes the specified row of the specified bank of this device to be loaded into

the associated sense amps.

An ROWR packet is specified when AV is not asserted. An 11 bit opcode field encodes a command for one of the

banks of this device. The PRER command causes a bank and its two associated sense amps to precharge, so

another row or an adjacent bank may be activated.

The REFA (refresh-activate) command is similar to the ACT command, except the row address comes from an

internal register REFR, and REFR is incremented at the largest bank address. The REFP (refresh-precharge)

command is identical to a PRER command.

The NAPR, NAPRC, PDNR, ATTN, and RLXR commands are used for managing the power dissipation of the

RDRAM and are described in more detail in "23. Power State Management". The TCEN and TCAL commands are

used to adjust the output driver slew rate and they are described in more detail in "25. Current and Temperature

Control".

Table 3-2 ROWA Packet and ROWR Packet Field Encodings

ROP10..ROP0 Field

Name

Command Description

Note1

10 9 8 7 6 5 4 3 2

-- -- -- -- -- --

-- -- --- -- No

operation.

1 Row address

ACT

Activate row R8..R0 of bank BR4..BR0 of device and move device to

ATTN

Note2

1 0

0 0 0 x

Note3

x 000 PRER

Precharge bank BR4..BR0 of this device.

1 0 0 0 0 1

x 000 REFA

Refresh (activate) row REFR8..REFR0 of bank BR3..BR0 of device.

Increment REFR if BR4..BR0=11111 (see Figure 24-1).

1 0

1 0 1 0 1

x 000 REFP

Precharge bank BR4..BR0 of this device after REFA (see Figure 24-1).

1 0 x x 0 0 0 0

x 000 PDNR

Move this device into the powerdown (PDN) power state (see figure 23-3).

1 0 x x 0 0 0 1

x 000 NAPR

Move this device into the nap (NAP) power state (see Figure 23-3).

1 0 x x 0 0 0 1

x 000 NAPRC

Move this device into the nap (NAP) power state conditionally.

1 0 x x x x x x x 0 000 ATTN

Note2

Move this device into the attention (ATTN) power state (see Figure 23-1).

1 0 x x x x x x x 1 000 RLXR

Move this device into the standby (STBY) power state (see Figure 23-2).

1 0 0 0 0 0 0 0 0 x 001 TCAL

Temperature calibrate this device (see figure 25-2).

1 0 0 0 0 0 0 0 0 x 010 TCEN

Temperature calibrate/enable this device (see Figure 25-2).

1 0 0 0 0 0 0 0 0 0 000 NOROP No

operation.

Notes 1. The DM (Device Match signal) value is determined by the DR4T, DR4F, DR3..DR0 field of the ROWA and ROWR packets.

See Table 3-1.

2. The ATTN command does not cause a RLX-to-ATTN transition for a broadcast operation (DR4T/DR4F=1/1).

3. An "x" entry indicates which commands may be combined. For instance, the three commands PRER/NAPRC/RLXR may

be specified in one ROP value (011000111000).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Table 3-3 shows the COP field encoding. The device must be in the ATTN power state in order to receive COLC

packets. The COLC packet is used primarily to specify RD (read) and WR (write) commands. Retire operations

(moving data from the write buffer to a sense amp) happen automatically. See Figure 15-1 for a more detailed

description.

The COLC packet can also specify a PREC command, which precharges a bank and its associated sense amps.

The RDA/WRA commands are equivalent to a combining RD/WR with a PREC. RLXC (relax) performs a power mode

transition. See 23. Power State Management.

Table 3-3 COLC Packet Field Encodings

S DC4..DC0

(select device)

Note1

COP3..0

Name

Command Description

- - - -

- - - - -

-- No

operation.

/= (DEVID4..0)

- - - - -

Retire write buffer of this device.

== (DEVID4..0)

x000

Note2

NOCOP

Retire write buffer of this device.

== (DEVID4..0)

x001

Retire write buffer of this device, then write column C6..C0 of bank

BC4..BC0 to write buffer.

== (DEVID4..0)

x010

RSRV

Reserved, no operation.

== (DEVID4..0)

x011

Read column C6..C0 of bank BC4..BC0 of this device.

== (DEVID4..0)

x100

PREC

Retire write buffer of this device, then precharge bank BC4..BC0 (see

Figure 12-2).

== (DEVID4..0)

x101

WRA

Same as WR, but precharge bank BC4..BC0 after write buffer (with new

data) is retired.

== (DEVID4..0)

x110

RSRV

Reserved, no operation.

== (DEVID4..0)

x111

RDA

Same as RD, but precharge bank BC4..BC0 afterward.

== (DEVID4..0)

1xxx

RLXC

Move this device into the standby (STBY) power state (see Figure 23-2).

Notes 1. "/=" means not equal, "==" means equal.

2. An "x" entry indicates which commands may be combined. For instance, the two commands WR/RLXC

may be specified in one COP value(1001).

Table 3-4 shows the COLM and COLX field encodings. The M bit is asserted to specify a COLM packet with two 8

bit bytemask fields MA and MB. If the M bit is not asserted, an COLX is specified. It has device and bank address

fields, and an opcode field. The primary use of the COLX packet is to permit an independent PREX (precharge)

command to be specified without consuming control bandwidth on the ROW pins. It is also used for the CAL

(calibrate) and SAM (sample) current control commands (see 25. Current and Temperature Control), and for the

RLXX power mode command (see 23. Power State Management).

Table 3-4 COLM Packet and COLX Packet Field Encodings

M DX4..DX0

(select device)

XOP4..0 Name

Command Description

- - - -

MSK

MB/MA bytemasks used by WR/WRA.

/= (DEVID4..0) -

-- No

operation.

== (DEVID4..0) 00000

NOXOP

No operation.

== (DEVID4..0) 1xxx0

Note

PREX

Precharge bank BX4..BX0 of this device (see Figure 12-2).

== (DEVID4..0) x10x0

CAL

Calibrate (drive) I

current for this device (see Figure 25-1).

== (DEVID4..0) x11x0

CAL / SAM Calibrate (drive) and Sample (update) I

current for this device (see Figure 25-1).

== (DEVID4..0) xxx10

RLXX

Move this device into the standby (STBY) power state (see Figure 23-2).

== (DEVID4..0) xxxx1

RSRV

Reserved, no operation.

Note An "x" entry indicates which commands may be combined. For instance, the two commands PREX/RLXX

may be specified in one XOP value (10010).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

4. DQ Packet Timing

Figure 4-1 shows the timing relationship of COLC packets with D and Q data packets. This document uses a

specific convention for measuring time intervals between packets: all packets on the ROW and COL pins (ROWA,

ROWR, COLC, COLM, COLX) use the trailing edge of the packet as a reference point, and all packets on the

DQA/DQB pins (D and Q) use the leading edge of the packet as a reference point.

An RD or RDA command will transmit a dualoct of read data Q a time t

CAC

later. This time includes one to five

cycles of round-trip propagation delay on the Channel. The t

CAC

parameter may be programmed to a one of a range

of values (8, 9, 10, 11, or 12 t

CYCLE

). The value chosen depends upon the number of RDRAM devices on the Channel

and the RDRAM device timing bin. See Figure 22-1(5/7) "TPARM Register" for more information.

A WR or WRA command will receive a dualoct of write data D a time t

CWD

later. This time does not need to include

the round-trip propagation time of the Channel since the COLC and D packets are traveling in the same direction.

When a Q packet follows a D packet (shown in the left half of the figure), a gap (t

CAC

-t

CWD

) will automatically appear

between them because the t

CWD

value is always less than the t

CAC

value. There will be no gap between the two COLC

packets with the WR and RD commands which schedule the D and Q packets.

When a D packet follows a Q packet (shown in the right half of the figure), no gap is needed between them because

the t

CWD

value is less than the t

CAC

value. However, a gap of t

CAC

- t

CWD

or greater must be inserted between the

COLC packets with the RD WR commands by the controller so the Q and D packets do not overlap.

Figure 4-1 Read (Q) and Write (D) Data Packet - Timing for t

CAC

= 8,9,10,11 or 12 t

CYCLE

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

RD b1

WR a1

D (a1)

CWD

RD c1

This gap on the DQA/DQB pins appears automatically

This gap on the COL pins must be inserted by the controller

CAC

-t

CWD

Q (b1)

···

WR d1

Q (c1)

D (d1)

···

CAC

-t

CWD

5. COLM Packet to D Packet Mapping

Figure 5-1 shows a write operation initiated by a WR command in a COLC packet. If a subset of the 16 bytes of

write data are to be written, then a COLM packet is transmitted on the COL pins a time t

RTR

after the COLC packet

containing the WR command. The M bit of the COLM packet is set to indicate that it contains the MA and MB mask

fields. Note that this COLM packet is aligned with the COLC packet which causes the write buffer to be retired. See

Figure 15-1 for more details.

If all 16 bytes of the D data packet are to be written, then no further control information is required. The packet slot

that would have been used by the COLM packet (t

RTR

after the COLC packet) is available to be used as an COLX

packet. This could be used for a PREX precharge command or for a housekeeping command (this case is not

shown). The M bit is not asserted in an COLX packet and causes all 16 bytes of the previous WR to be written

unconditionally. Note that a RD command will never need a COLM packet, and will always be able to use the COLX

packet option (a read operation has no need for the byte-write-enable control bits).

The figure 5-1 also shows the mapping between the MA and MB fields of the COLM packet and bytes of the D

packet on the DQA and DQB pins. Each mask bit controls whether a byte of data is written (=1) or not written (=0).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 5-1 Mapping between COLM Packet and D Packet for WR Command

CTM/CFM

COL4

COL3

COL2

COL1

COL0

MA7 MA5 MA3 MA1

M=1 MA6 MA4 MA2 MA0

MB7 MB4 MB1

MB6 MB3 MB0

MB5 MB2

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

MSK (a1)

retire (a1)

WR a1

D (a1)

ACT b0

ACT a0

Transaction a: WR

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a3 = {Da,Ba}

RTR

CTM/CFM

DQB8

DQB7

DQB1

DQB0

DB71

DB8

DB17 DB26 DB35 DB45 DB53 DB62

DB7

DB16 DB25 DB34 DB44 DB52 DB61 DB70

DB1

DB10 DB19 DB28 DB37 DB46 DB55 DB64

DB0

DB9

DB18 DB27 DB36 DB45 DB54 DB63

COLM Packet

PRER a2

DQA8

DQA7

DQA1

DQA0

D Packet

MB0

DA71

DA8

DA17 DA26 DA35 DA45 DA53 DA62

DA7

DA16 DA25 DA34 DA44 DA52 DA61 DA70

DA1

DA10 DA19 DA28 DA37 DA46 DA55 DA64

DA0

DA9

DA18 DA27 DA36 DA45 DA54 DA63

MA0

MB1

MA1

MB2

MA2

MB3

MA3

MB4

MA4

MB5

MA5

MB6

MA6

MB7

MA7

CWD

Each bit of the MB7..MB0 field
controls writing (=1) or no writing
(=0) of the indicated DB bits when
the M bit of the COLM packet is one.

Each bit of the MA7..MA0 field
controls writing (=1) or no writing
(=0) of the indicated DA bits when
the M bit of the COLM packet is one.

When M=1, the MA and MB
fields control writing of
individual data bytes.
When M=0, all data bytes are
written unconditionally.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

6. ROW-to-ROW Packet Interaction

Figure 6-1 shows two packets on the ROW pins separated by an interval t

RRDELAY

which depends upon the packet

contents. No other ROW packets are sent to banks {Ba, Ba+1, Ba-1} between packet "a" and packet "b" unless

noted otherwise.

Figure 6-1 ROW-to-ROW Packet Interaction - Timing

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

Transaction a: ROPa
Transaction b: ROPb

a0 = {Da,Ba,Ra}

b0= {Db,Bb,Rb}

RRDELAY

ROPa a0

ROPb b0

Table 6-1 summarizes the t

RRDELAY

values for all possible cases.

Cases RR1 through RR4 show two successive ACT commands. In case RR1, there is no restriction since the ACT

commands are to different devices. In case RR2, the t

restriction applies to the same device with non-adjacent

banks. Cases RR3 and RR4 are illegal (as shown) since bank Ba needs to be precharged. If a PRER to Ba, Ba+1,

or Ba-1 is inserted, t

RRDELAY

is t

RAS

to the PRER command, and t

to the next ACT).

Cases RR5 through RR8 show an ACT command followed by a PRER command. In cases RR5 and RR6, there are

no restrictions since the commands are to different devices or to non-adjacent banks of the same device. In cases

RR7 and RR8, the t

RAS

restriction means the activated bank must wait before it can be precharged.

Cases RR9 through RR12 show a PRER command followed by an ACT command. In cases RR9 and RR10, there

are essentially no restrictions since the commands are to different devices or to non-adjacent banks of the same

device. RR10a and RR10b depend upon whether a bracketed bank (Ba+-1) is precharged or activated. In cases

RR11 and RR12, the same and adjacent banks must all wait t

for the sense amp and bank to precharge before

being activated.

Cases RR13 through RR16 summarize the combinations of two successive PRER commands. In case RR13 there

is no restriction since two devices are addressed. In RR14, t

applies, since the same device is addressed. In

RR15 and RR16, the same bank or an adjacent bank may be given repeated PRER commands with only the t

restriction.

Two adjacent banks can't be activate simultaneously. A precharge command to one bank will thus affect the state of

the adjacent banks (and sense amps). If bank Ba is activate and a PRER is directed to Ba, then bank Ba will be

precharged along with sense amps Ba-1/Ba and Ba/Ba+1. If bank Ba+1 is activate and a PRER is directed to Ba,

then bank Ba+1 will be precharged along with sense amps Ba/Ba+1 and Ba+1/Ba+2. If bank Ba-1 is activate and a

PRER is directed to Ba, then bank Ba-1 will be precharged along with sense amps Ba/Ba-1 and Ba-1/Ba-2.

A ROW packet may contain commands other than ACT or PRER. The REFA and REFP commands are equivalent

to ACT and PRER for interaction analysis purposes. The interaction rules of the NAPR, NAPRC, PDNR, RLXR,

ATTN, TCAL, and TCEN commands are discussed in later section (see Table 3-2 for cross-ref).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Table 6-1 ROW-to-ROW Packet Interaction - Rules

Case

# ROPa

Da Ba Ra ROPb

Db Bb

Rb t

RRDELAY

Example

RR1

ACT Da Ba Ra ACT /=

Da xxxx

x..x t

PACKET

Figure

10-2

RR2

ACT

== Da /= {Ba, Ba+1, Ba-1}

x..x t

Figure

10-2

RR3

ACT

== Da == {Ba+1, Ba-1}

x..x t

- illegal unless PRER to Ba / Ba+1 / Ba-1 Figure 10-1

RR4

ACT Da Ba Ra ACT ==

{Ba}

x..x t

- illegal unless PRER to Ba / Ba+1 / Ba-1 Figure 10-1

RR5

ACT Da Ba Ra PRER

Da xxxx

x..x t

PACKET

Figure

10-2

RR6

ACT

PRER == Da /= {Ba, Ba+1, Ba-1}

x..x t

PACKET

Figure

10-2

RR7

ACT

PRER == Da == {Ba+1, Ba-1}

x..x t

RAS

Figure

10-1

RR8

ACT Da Ba Ra PRER

{Ba}

x..x t

RAS

Figure

13-1

RR9

PRER

Da Ba Ra ACT /=

Da xxxx

x..x t

PACKET

Figure

10-3

RR10

PRER Da

ACT

== Da /= {Ba, Ba+-1, Ba+-2} x..x t

PACKET

Figure

10-3

RR10a PRER

Da Ba Ra ACT ==

{Ba+2}

x..x t

PACKET

if Ba+1 is precharged/activated.

RR10b PRER

Da Ba Ra ACT ==

{Ba-2}

x..x t

PACKET

if Ba-1 is precharged/activated.

RR11

PRER Da

ACT

== Da == {Ba+1, Ba-1}

x..x t

Figure

10-1

RR12 PRER

Da Ba Ra ACT ==

{Ba}

x..x t

Figure

10-1

RR13 PRER

Da Ba Ra PRER

Da xxxx

x..x t

PACKET

Figure

10-3

RR14

PRER Da

PRER == Da /= {Ba, Ba+1, Ba-1}

x..x t

Figure

10-3

RR15

PRER Da

PRER == Da == {Ba+1, Ba-1}

x..x t

Figure

10-3

RR16 PRER

Da Ba Ra PRER

{Ba}

x..x t

Figure

10-3

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

7. ROW-to-COL Packet Interaction

Figure 7-1 shows two packets on the ROW and COL pins. They must be separated by an interval t

RCDELAY

which

depends upon the packet contents.

Figure 7-1 ROW-to-COL Packet Interaction- Timing

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

Transaction a: ROPa

Transaction b: COPb

a0 = {Da,Ba,Ra}

b1= {Db,Bb,Cb1}

RCDELAY

ROPa a0

COPb b1

Table 7-1 summarizes the t

RCDELAY

values for all possible cases. Note that if the COL packet is earlier than the

ROW packet, it is considered a COL-to-ROW packet interaction.

Cases RC1 through RC5 summarize the rules when the ROW packet has an ACT command. Figure 13-1 and

Figure 14-1 show examples of RC5 - an activation followed by a read or write. RC4 is an illegal situation, since a

read or write of a precharged banks is being attempted (remember that for a bank to be activated, adjacent banks

must be precharged). In cases RC1, RC2, and RC3, there is no interaction of the ROW and COL packets.

Cases RC6 through RC8 summarize the rules when the ROW packet has a PRER command. There is either no

interaction (RC6 through RC9) or an illegal situation with a read or write of a precharged bank (RC9).

The COL pins can also schedule a precharge operation with a RDA, WRA, or PREC command in a COLC packet or

a PREX command in a COLX packet. The constraints of these precharge operations may be converted to equivalent

PRER command constraints using the rules summarized in Figure 12-2.

Table 7-1 ROW-to-COL Packet Interaction - Rules

Case # ROPa Da

COPb

Cb1

RCDELAY

Example

RC1

ACT

NOCOP, RD, retire /= Da

xxxx

x..x

RC2 ACT

Da Ba Ra NOCOP

Da xxxx

x..x 0

RC3

ACT

RD, retire

== Da

/= {Ba, Ba+1, Ba-1}

x..x

RC4

ACT

RD, retire

== Da

== {Ba+1, Ba-1}

x..x

Illegal

RC5

ACT

RD, retire

== Da

== {Ba}

x..x

RCD

Figure

13-1

RC6

PRER Da

NOCOP, RD, retire /= Da

xxxx

x..x

RC7 PRER

Da Ba Ra NOCOP

Da xxxx

x..x 0

RC8

PRER Da

RD, retire

== Da

/= {Ba, Ba+1, Ba-1}

x..x

RC9

PRER Da

RD, retire

== Da

== {Ba+1, Ba-1}

x..x

Illegal

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

8. COL-to-COL Packet Interaction

Figure 8-1 shows three arbitrary packets on the

COL pins. Packets "b" and "c" must be separated by

an interval t

CCDELAY

which depends upon the

command and address values in all three packets.

Table 8-1 summarizes the t

CCDELAY

values for all

possible cases.

Cases CC1 through CC5 summarize the rules for

every situation other than the case when COPb is a

WR command and COPc is a RD command. In

CC3, when a RD command is followed by a WR

command, a gap of t

CAC

CWD

must be inserted

between the two COL packets. See Figure 4-1 for

more explanation of why this gap is needed. For

cases CC1, CC2, CC4, and CC5, there is no

restriction (t

CCDELAY

is t

In cases CC6 through CC10, COPb is a WR command and COPc is a RD command. The t

CCDELAY

value needed

between these two packets depends upon the command and address in the packet with COPa. In particular, in case

CC6 when there is WR-WR-RD command sequence directed to the same device, a gap will be needed between the

packets with COPb and COPc. The gap will need a COLC packet with a NOCOP command directed to any device in

order to force an automatic retire to take place. Figure 15-2 (right) provides a more detailed explanation of this case.

Cases CC7, CC8, CC9 and CC10 have no restriction (t

CCDELAY

is t

For the purposes of analyzing COL-to-ROW interactions, the PREC, WRA, and RDA commands of the COLC

packet are equivalent to the NOCOP, WR, and RD commands. These commands also cause a precharge operation

PREC to take place. This precharge may be converted to an equivalent PRER command on the ROW pins using the

rules summarized in Figure 12-2.

Table 8-1 COL-to-COL Packet Interaction - Rules

Case

# COPa Da

Ba Ca1

COPb Db Bb Cb1

COPc Dc

Bc Cc1

CCDELAY

Example

CC1

xxxx

xxxxx x..x x..x NOCOP Db Bb Cb1 xxxx

xxxxx x..x x..x t

CC2

xxxx

xxxxx x..x x..x RD, WR Db Bb Cb1 NOCOP xxxxx

x..x x..x t

CC3

xxxx

xxxxx x..x x..x RD

Db Bb Cb1 WR

xxxxx x..x x..x t

CAC

CWD

Figure

4-1

CC4

xxxx

xxxxx

x..x

RD Db

Cb1

RD xxxxx

x..x

Figure

13-1

CC5

xxxx

xxxxx

x..x

WR Db

Cb1

WR xxxxx

x..x

Figure

14-1

CC6

== Db x

x..x WR

Cb1 RD

== Db

x..x x..x t

RTR

Figure

15-1

CC7

== Db x

x..x WR

Cb1 RD

/= Db

x..x x..x t

CC8

/= Db

x..x WR

Cb1 RD

== Db

x..x x..x t

CC9

NOCOP == Db x

x..x WR

Cb1 RD

== Db

x..x x..x t

CC10

== Db x

x..x WR

Cb1 RD

== Db

x..x x..x t

Figure 8-1 COL-to-COL Packet Interaction- Timing

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

COPa a1

Transaction a: COPa

COPc c1

Transaction b: COPb

Transaction c: COPc

a1 = {Da,Ba,Ca1}
b1 = {Db,Bb,Cb1}

c1 = {Dc,Bc,Cc1}

CCDELAY

COPb b1

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

9. COL-to-ROW Packet Interaction

Figure 9-1 shows arbitrary packets on the COL

and ROW pins. They must be separated by an

interval t

CRDELAY

which depends upon the

command and address values in the packets.

Table 9-1 summarizes the t

CRDELAY

value for all

possible cases.

Cases CR1, CR2, CR3, and CR9 show no

interaction between the COL and ROW packets,

either because one of the commands is a NOP or

because the packets are directed to different

devices or to non-adjacent banks.

Case CR4 is illegal because an already-activated

bank is to be re-activated without being

precharged. Case CR5 is illegal because an

adjacent bank can't be activated or precharged

until bank Ba is precharged first.

In case CR6, the COLC packet contains a RD command, and the ROW packet contains a PRER command for the

same bank. The t

RDP

parameter specifies the required spacing.

Likewise, in case CR7, the COLC packet causes an automatic retire to take place, and the ROW packet contains a

PRER command for the same bank. The t

RTP

parameter specifies the required spacing.

Case CR8 is labeled "Hazardous" because a WR command should always be followed by an automatic retire before

a precharge is scheduled. Figure 15-3 shows an example of what can happen when the retire is not able to happen

before the precharge.

For the purposes of analyzing COL-to-ROW interactions, the PREC, WRA, and RDA commands of the COLC

packet are equivalent to the NOCOP, WR, and RD commands. These commands also cause a precharge operation

to take place. This precharge may converted to an equivalent PRER command on the ROW pins using the rules

summarized in Figure 12-2.

A ROW packet may contain commands other than ACT or PRER. The REFA and REFP commands are equivalent
to ACT and PRER for interaction analysis purposes. The interaction rules of the NAPR, PDNR, and RLXR
commands are discussed in a later section.

Table 9-1 COL-to-ROW Packet Interaction - Rules

Case # COPa

Ca1

ROPb

CRDELAY

Example

CR1 NOCOP

Da Ba Ca1 x..x xxxxx

xxxxx

x..x 0

CR2 RD/WR Da Ba Ca1 x..x /=

Da xxxxx

x..x 0

CR3

RD/WR

Ca1

x..x

== Da

/= {Ba, Ba+1, Ba-1} x..x

CR4

RD/WR

Ca1

ACT

== Da

== {Ba}

x..x

Illegal

CR5

RD/WR

Ca1

ACT

== Da

== {Ba+1, Ba-1}

x..x

Illegal

CR6

Ca1

PRER

== Da

== {Ba, Ba+1, Ba-1} x..x

RDP

Figure

13-1

CR7 retire

Note 1

Ca1

PRER

== Da

== {Ba, Ba+1, Ba-1} x..x

RTP

Figure

14-1

CR8 WR

Note 2

Ca1

PRER

== Da

== {Ba, Ba+1, Ba-1} x..x

Figure 15-3

CR9 xxxx

Da Ba Ca1 NOROP

xxxxx

x..x 0

Notes 1. This is any command which permits the write buffer of device Da to retire (see Table 3-3). "Ba" is the bank

address in the write buffer.

2. This situation is hazardous because the write buffer will be left unretired while the targeted bank is

precharged. See Figure 15-3.

Figure 9-1 COL-to-ROW Packet Interaction- Timing

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

Transaction a: COPa
Transaction b: ROPb

a1= {Da,Ba,Ca1}
b0= {Db,Bb,Rb}

CRDELAY

ROPb b0

COPa a1

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

10. ROW-to-ROW Examples

Figure 10-1 shows examples of some of the ROW-to-ROW packet spacings from Table 6-1. A complete sequence

of activate and precharge commands is directed to a bank. The RR8 and RR12 rules apply to this sequence. In

addition to satisfying the t

RAS

and t

timing parameters, the separation between ACT commands to the same bank

must also satisfy the t

timing parameter (RR4).

When a bank is activated, it is necessary for adjacent banks to remain precharged. As a result, the adjacent banks

will also satisfy parallel timing constraints; in the example, the RR11 and RR3 rules are analogous to the RR12 and

RR4 rules.

Figure 10-1 Row Packet Example

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ACT a0

PRER a1

RAS

a0 = {Da,Ba,Ra}

a1 = {Da,Ba+1}

b0 = {Da,Ba+1,Rb}

Same Device

Adjacent Bank

RR7

Same Device

Adjacent Bank

RR11

ACT b0

b0 = {Da,Ba,Rb}

Same Device

Same Bank

RR12

b0 = {Da,Ba+1,Rb}

Same Device

Adjacent Bank

RR3

b0 = {Da,Ba,Rb}

Same Device

Same Bank

RR4

Figure 10-2 shows examples of the ACT-to-ACT (RR1, RR2) and ACT-to-PRER (RR5, RR6) command spacings

from Table 6-1. In general, the commands in ROW packets may be spaced an interval t

PACKET

apart unless they are

directed to the same or adjacent banks or unless they are a similar command type (both PRER or both ACT)

directed to the same device.

Figure 10-2 Row Packet Example

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ACT a0

PRER b0

PACKET

ACT c0

a0 = {Da,Ba,Ra}

b0 = {Db,Bb,Rb}

c0 = {Da,Bc,Rc}

Different Device

Any Bank

Same Device

Non-adjacent Bank

RR1
RR2

ACT a0

ACT b0

PRER c0

PACKET

b0 = {Db,Bb,Rb}

c0 = {Da,Bc,Rc}

Different Device

Any Bank

Same Device

Non-adjacent Bank

RR5
RR6

ACT a0

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 10-3 shows examples of the PRER-to-PRER (RR13, RR14) and PRER-to-ACT (RR9, RR10) command

spacings from Table 6-1. The RR15 and RR16 cases (PRER-to-PRER to same or adjacent banks) are not shown,

but are similar to RR14. In general, the commands in ROW packets may be spaced an interval t

PACKET

apart unless

they are directed to the same or adjacent banks or unless they are a similar command type (both PRER or both ACT)

directed to the same device.

Figure 10-3 Row Packet Example

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

PRER a0

ACT b0

PACKET

PRER c0

a0 = {Da,Ba,Ra}
b0 = {Db,Bb,Rb}

c0 = {Da,Bc,Rc}

Different Device

Any Bank

Same Device

Non-adjacent Bank

RR13
RR14

PRER a0

PRER b0

ACT c0

PACKET

b0 = {Db,Bb,Rb}

c0 = {Da,Bc,Rc}

Different Device

Any Bank

Same Device

Non-adjacent Bank

RR9

RR10

PRER a0

c0 = {Da,Ba,Rc}

Same Device

Ajacent Bank

RR15

c0 = {Da,Ba+1Rc}

Same Device

Same Bank

RR16

11. Row and Column Cycle Description

Activate: A row cycle begins with the activate (ACT) operation. The activation process is destructive; the act of

sensing the value of a bit in a bank's storage cell transfers the bit to the sense amp, but leaves the original bit in the

storage cell with an incorrect value.

Restore: Because the activation process is destructive, a hidden operation called restore is automatically performed.

The restore operation rewrites the bits in the sense amp back into the storage cells of the activated row of the bank.

Read/Write: While the restore operation takes place, the sense amp may be read (RD) and written (WR) using

column operations. If new data is written into the sense amp, it is automatically forwarded to the storage cells of the

bank so the data in the activated row and the data in the sense amp remain identical.

Precharge: When both the restore operation and the column operations are completed, the sense amp and bank are

precharged (PRE). This leaves them in the proper state to begin another activate operation.

Intervals: The activate operation requires the interval t

RCD,MIN

to complete. The hidden restore operation requires the

interval t

RAS,MIN

- t

RCD,MIN

to complete. Column read and write operations are also performed during the t

RAS,MIN

RCD,MIN

interval (if more than about four column operations are performed, this interval must be increased). The

precharge operation requires the interval t

RP,MIN

to complete.

Adjacent Banks: An RDRAM device with a "s" designation (512K

18 x

32s) indicates it contains "split banks". This

means the sense amps are shared between two adjacent banks. When a row in a bank is activated, the two adjacent

sense amps are connected to (associated with) that bank and are not available for use by the two adjacent banks.

These two adjacent banks must remain precharged while the selected bank goes through its activate, restore,

read/write, and precharge operations.

For example (referring to the block diagram), if bank 5 is accessed, sense amp 4/5 and sense amp 5/6 will both be

loaded with one of the 512 rows (with 1,024 bytes loaded into each sense amp from the 2K

byte row 512 bytes to

the DQA side and 512 bytes to the DQB side). While this row from bank 5 is being accessed, no rows may be

accessed in banks 4 or 6 because of the sense amp sharing.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

12. Precharge Mechanisms

Figure 12-1 shows an example of precharge with the ROWR packet mechanism. The PRER command must occur

a time t

RAS

after the ACT command, and a time t

before the next ACT command. This timing will serve as a

baseline against which the other precharge mechanisms can be compared.

Figure 12-1 Precharge via PRER Command in ROWR Packet

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ACT a0

PRER a5

RAS

a0 = {Da,Ba,Ra}

a5 = {Da,Ba}

b0 = {Da,Ba,Rb}

ACT b0

Figure 12-2 (top) shows an example of precharge with a RDA command. A bank is activated with an ROWA packet

on the ROW pins. Then, a series of four dualocts are read with RD commands in COLC packets on the COL pins.

The fourth of these commands is a RDA, which causes the bank to automatically precharge when the final read has

finished. The timing of this automatic precharge is equivalent to a PRER command in an ROWR packet on the ROW

pins that is offset a time t

OFFP

from the COLC packet with the RDA command. The RDA command should be treated

as a RD command in a COLC packet as well as a simultaneous (but offset) PRER command in an ROWR packet

when analyzing interactions with other packets.

Figure 12-2 (middle) shows an example of precharge with a WRA command. As in the RDA example, a bank is

activated with an ROWA packet on the ROW pins. Then, two dualocts are written with WR commands in COLC

packets on the COL pins. The second of these commands is a WRA, which causes the bank to automatically

precharge when the final write has been retired. The timing of this automatic precharge is equivalent to a PRER

command in an ROWR packet on the ROW pins that is offset a time t

OFFP

from the COLC packet that causes the

automatic retire. The WRA command should be treated as a WR command in a COLC packet as well as a

simultaneous (but offset) PRER command in an ROWR packet when analyzing interactions with other packets. Note

that the automatic retire is triggered by a COLC packet a time t

RTR

after the COLC packet with the WR command

unless the second COLC contains a RD command to the same device. This is described in more detail in Figure 15-

Figure 12-2 (bottom) shows an example of precharge with a PREX command in an COLX packet. A bank is

activated with an ROWA packet on the ROW pins. Then, a series of four dualocts are read with RD commands in

COLC packets on the COL pins. The fourth of these COLC packets includes an COLX packet with a PREX

command. This causes the bank to precharge with timing equivalent to a PRER command in an ROWR packet on

the ROW pins that is offset a time t

OFFP

from the COLX packet with the PREX command.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 12-2 Offsets for Alternate Precharge Mechanisms

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

RD a1

ACT a0

RD a2

Q (a2)

Q (a1)

ACT b0

MSK (a2)

MSK (a1)

retire (a1)

OFFP

WR a1

D (a2)

D (a1)

ACT b0

ACT a0

Transaction a: RD

a0 = {Da,Ba,Ra}

a5 = {Da,Ba}

COLC Packet: RDA Precharge Offset

COLC Packet: WDA Precharge Offset

Transaction a: WR

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a2 = {Da,Ba,Ca2}

a5 = {Da,Ba}

COLX Packet: PREX Precharge Offset

RD a3

Q (a4)

Q (a3)

RDA a4

PRER a5

The RDA precharge is equivalent to a PRER command here

OFFP

PRER a5

The WRA precharge (triggered by the automatic retire) is equivalent to a PRER command here

WRA a2

retire (a2)

RTR

a3 = {Da,Ba,Ca3}

a4 = {Da,Ba,Ca4}

a1 = {Da,Ba,Ca1}

a2 = {Da,Ba,Ca2}

RD a1

ACT a0

RD a2

Q (a2)

Q (a1)

ACT b0

OFFP

Transaction a: RD

a0 = {Da,Ba,Ra}

a5 = {Da,Ba}

RD a3

Q (a4)

Q (a3)

PRER a5

The PREX precharge command is equivalent to a PRER command here

a3 = {Da,Ba,Ca3}

a4 = {Da,Ba,Ca4}

a1 = {Da,Ba,Ca1}

a2 = {Da,Ba,Ca2}

RD a4

PREX a5

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

13. Read Transaction - Example

Figure 13-1 shows an example of a read transaction. It begins by activating a bank with an ACT a0 command in an

ROWA packet. A time t

RCD

later a RD a1 command is issued in a COLC packet. Note that the ACT command

includes the device, bank, and row address (abbreviated as a0) while the RD command includes device, bank, and

column address (abbreviated as a1). A time t

CAC

after the RD command the read data dualoct Q (a1) is returned by

the device. Note that the packets on the ROW and COL pins use the end of the packet as a timing reference point,

while the packets on the DQA/DQB pins use the beginning of the packet as a timing reference point.

A time t

after the first COLC packet on the COL pins a second is issued. It contains a RD a2 command. The a2

address has the same device and bank address as the a1 address (and a0 address), but a different column address.

A time t

CAC

after the second RD command a second read data dualoct Q(a2) is returned by the device.

Next, a PRER a3 command is issued in an ROWR packet on the ROW pins. This causes the bank to precharge so

that a different row may be activated in a subsequent transaction or so that an adjacent bank may be activated. The

a3 address includes the same device and bank address as the a0, a1, and a2 addresses. The PRER command

must occur a time t

RAS

or more after the original ACT command (the activation operation in any DRAM is destructive,

and the contents of the selected row must be restored from the two associated sense amps of the bank during the

RAS

interval). The PRER command must also occur a time t

RDP

or more after the last RD command. Note that the

RDP

value shown is greater than the t

RDP,MIN

specification in "36.Timing Parameters". This transaction example reads

two dualocts, but there is actually enough time to read three dualocts before t

RDP

becomes the limiting parameter

rather than t

RAS

. If four dualocts were read, the packet with PRER would need to shift right (be delayed) by one t

CYCLE

(note-this case is not shown).

Finally, an ACT b0 command is issued in an ROWR packet on the ROW pins. The second ACT command must

occur a time t

or more after the first ACT command and a time t

or more after the PRER command. This ensures

that the bank and its associated sense amps are precharged. This example assumes that the second transaction

has the same device and bank address as the first transaction, but a different row address. Transaction b may not

be started until transaction a has finished. However, transactions to other banks or other devices may be issued

during transaction a.

Figure 13-1 Read Transaction Example

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

RD a1

ACT a0

PRER a3

RD a2

Q (a2)

RCD

CAC

Q (a1)

ACT b0

RAS

Transaction a: RD

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a2 = {Da,Ba,Ca2}

a3 = {Da,Ba}

CAC

RDP

Transaction b: xx

b0 = {Da,Ba,Rb}

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

14. Write Transaction - Example

Figure 14-1 shows an example of a write transaction. It begins by activating a bank with an ACT a0 command in an

ROWA packet. A time t

RCD

- t

RTR

later a WR a1 command is issued in a COLC packet (note that the t

RCD

interval is

measured to the end of the COLC packet with the first retire command). Note that the ACT command includes the

device, bank, and row address (abbreviated as a0) while the WR command includes device, bank, and column

address (abbreviated as a1). A time t

CWD

after the WR command the write data dualoct D(a1) is issued. Note that

the packets on the ROW and COL pins use the end of the packet as a timing reference point, while the packets on

the DQA/DQB pins use the beginning of the packet as a timing reference point.

A time t

after the first COLC packet on the COL pins a second COLC packet is issued. It contains a WR a2

command. The a2 address has the same device and bank address as the a1 address (and a0 address), but a

different column address. A time t

CWD

after the second WR command a second write data dualoct D(a2) is issued.

A time t

RTR

after each WR command an optional COLM packet MSK (a1) is issued, and at the same time a COLC

packet is issued causing the write buffer to automatically retire. See Figure 15-1 for more detail on the write/retire

mechanism. If a COLM packet is not used, all data bytes are unconditionally written. If the COLC packet which

causes the write buffer to retire is delayed, then the COLM packet (if used) must also be delayed.

Next, a PRER a3 command is issued in an ROWR packet on the ROW pins. This causes the bank to precharge so

that a different row may be activated in a subsequent transaction or so that an adjacent bank may be activated. The

a3 address includes the same device and bank address as the a0, a1, and a2 addresses. The PRER command

must occur a time t

RAS

or more after the original ACT command (the activation operation in any DRAM is destructive,

and the contents of the selected row must be restored from the two associated sense amps of the bank during the

RAS

interval).

A PRER a3 command is issued in an ROWR packet on the ROW pins. The PRER command must occur a time t

RTP

or more after the last COLC which causes an automatic retire.

Finally, an ACT b0 command is issued in an ROWR packet on the ROW pins. The second ACT command must

occur a time t

or more after the first ACT command and a time t

or more after the PRER command. This ensures

that the bank and its associated sense amps are precharged. This example assumes that the second transaction

has the same device and bank address as the first transaction, but a different row address. Transaction b may not

be started until transaction a has finished. However, transactions to other banks or other devices may be issued

during transaction a.

Figure 14-1 Write Transaction Example

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

MSK (a2)

retire (a2)

MSK (a1)

retire (a1)

WR a1

PRER a3

WR a2

D (a2)

D (a1)

ACT b0

ACT a0

CWD

Transaction a: WR

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a2 = {Da,Ba,Ca2}

a3 = {Da,Ba}

CWD

RTR

RAS

RTR

RTP

Transaction b: xx

b0 = {Da,Ba,Rb}

RCD

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

15. Write/Retire - Examples

The process of writing a dualoct into a sense amp of an RDRAM bank occurs in two steps. The first step consists of

transporting the write command, write address, and write data into the write buffer. The second step happens when

the RDRAM device automatically retires the write buffer (with an optional bytemask) into the sense amp. This two-

step write process reduces the natural turn-around delay due to the internal bidirectional data pins.

Figure 15-1 (left) shows an example of this two step process. The first COLC packet contains the WR command

and an address specifying device, bank and column. The write data dualoct follows a time t

CWD

later. This

information is loaded into the write buffer of the specified device. The COLC packet which follows a time t

RTR

later

will retire the write buffer. The retire will happen automatically unless (1) a COLC packet is not framed (no COLC

packet is present and the S bit is zero), or (2) the COLC packet contains a RD command to the same device. If the

retire does not take place at time t

RTR

after the original WR command, then the device continues to frame COLC

packets, looking for the first that is not a RD directed to itself. A bytemask MSK(a1) may be supplied in a COLM

packet aligned with the COLC that retires the write buffer at time t

RTR

after the WR command.

The memory controller must be aware of this two-step write/retire process. Controller performance can be

improved, but only if the controller design accounts for several side effects.

Figure 15-1 (right) shows the first of these side effects. The first COLC packet has a WR command which loads the

address and data into the write buffer. The third COLC causes an automatic retire of the write buffer to the sense

amp. The second and fourth COLC packets (which bracket the retire packet) contain RD commands with the same

device, bank and column address as the original WR command. In other words, the same dualoct address that is

written is read both before and after it is actually retired. The first RD returns the old dualoct value from the sense

amp before it is overwritten. The second RD returns the new dualoct value that was just written.

Figure 15-1 Normal Retire (left) and Retire/Read Ordering (right)

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

Transaction a: WR

a1= {Da,Ba,Ca1}

D (a1)

WR a1

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

Transaction a: WR
Transaction b: RD

a1= {Da,Ba,Ca1}

b1= {Da,Ba,Ca1}

retire (a1)
MSK (a1)

RTR

CWD

D (a1)

WR a1

retire (a1)
MSK (a1)

RTR

RD b1

RD c1

Q (b1)

CWD

Transaction c: RD

c1= {Da,Ba,Ca1}

CAC

This RD gets the old data

This RD gets the new data

Retire is automatic here unless:

CAC

(1) No COLC packet (S=0) or

(2) COLC packet is RD to device Da

Q (

Figure 15-2 (left) shows the result of performing a RD command to the same device in the same COLC packet slot

that would normally be used for the retire operation. The read may be to any bank and column address; all that

matters is that it is to the same device as the WR command. The retire operation and MSK(a1) will be delayed by a

time t

PACKET

as a result. If the RD command used the same bank and column address as the WR command, the old

data from the sense amp would be returned. If many RD commands to the same device were issued instead of the

single one that is shown, then the retire operation would be held off an arbitrarily long time. However, once a RD to

another device or a WR or NOCOP to any device is issued, the retire will take place. Figure 15-2 (right) illustrates a

situation in which the controller wants to issue a WR-WR-RD COLC packet sequence, with all commands addressed

to the same device, but addressed to any combination of banks and columns.

The RD will prevent a retire of the first WR from automatically happening. But the first dualoct D(a1) in the write

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

buffer will be overwritten by the second WR dualoct D(b1) if the RD command is issued in the third COLC packet.

Therefore, it is required in this situation that the controller issue a NOCOP command in the third COLC packet,

delaying the RD command by a time of t

PACKET

. This situation is explicitly shown in Table 8-1 for the cases in which

CCDELAY

is equal to t

RTR

Figure 15-2 Retire Held Off by Read (left) and Controller Forces WWR Gap (right)

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

Transaction a: WR
Transaction b: RD

a1= {Da,Ba,Ca1}
b1= {Da,Bb,Cb1}

Transaction a: WR
Transaction b: WR

a1= {Da,Ba,Ca1}
b1= {Da,Bb,Cb1}

D (a1)

WR a1

retire (a1)
MSK (a1)

RD b1

Q (b1)

CWD

CAC

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

D (a1)

WR a1

RD c1

RTR

retire (a1)
MSK (a1)

CWD

CAC

WR b1

D (b1)

Transaction c: RD

c1= {Da,Bc,Cc1}

The controller must insert a NOCOP to retire (a1)

to make room for the data (b1) in the write buffer

The retire operation for a write can be

held off by a read to the same device

RTR

+ t

PACKET

Figure 15-3 shows a possible result when a retire is held off for a long time (an extended version of Figure 15-2-left).

After a WR command, a series of six RD commands are issued to the same device (but to any combination of bank

and column addresses). In the meantime, the bank Ba to which the WR command was originally directed is

precharged, and a different row Rc is activated. When the retire is automatically performed, it is made to this new

row, since the write buffer only contains the bank and column address, not the row address. The controller can

insure that this doesn't happen by never precharging a bank with an unretired write buffer. Note that in a system with

more than one RDRAM device, there will never be more than two RDRAM devices with unretired write buffers. This

is because a WR command issued to one device automatically retires the write buffers of all other devices written a

time t

RTR

before or earlier.

Figure 15-3 Retire Held Off by Reads to Same Device, Write Buffer Retired to New Row

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

MSK (a1)

retire (a1)

RD b1

WR a1

PRER a2

RCD

ACT c0

RAS

ACT a0

CWD

RTR

Transaction a: WR

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a2 = {Da,Ba}

RD b2

RD b3

RD b4

RD b5

RD b6

Transaction b: RD

b1 = {Da,Bb,Cb1}

b2 = {Da,Bb,Cb2}

b3= {Da,Bb,Cb3}

b4 = {Da,Bb,Cb4}

b5 = {Da,Bb,Cb5}

b6 = {Da,Bb,Cb6}

Q (b1)

CAC

Q (b2)

Q (b3)

Q (b4)

Q (b5)

Transaction c: WR

c0 = {Da,Ba,Rc}

D (a1)

The retire operation puts the

write data in the new row

WARNING
This sequence is hazardous
and must be used with caution

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

16. Interleaved Write - Example

Figure 16-1 shows an example of an interleaved write transaction. Transactions similar to the one presented in

Figure 14-1 are directed to non-adjacent banks of a single RDRAM device. This allows a new transaction to be

issued once every t

interval rather than once every t

interval (four times more often). The DQ data pin efficiency

is 100% with this sequence.

With two dualocts of data written per transaction, the COL, DQA, and DQB pins are fully utilized. Banks are

precharged using the WRA autoprecharge option rather than the PRER command in an ROWR packet on the ROW

pins.

In this example, the first transaction is directed to device Da and bank Ba. The next three transactions are directed

to the same device Da, but need to use different, non-adjacent banks Bb, Bc, Bd so there is no bank conflict. The

fifth transaction could be redirected back to bank Ba without interference, since the first transaction would have

completed by then (t

has elapsed). Each transaction may use any value of row address (Ra, Rb, ...) and column

address (Ca1, Ca2, Cb1, Cb2, ...).

Figure 16-1 Interleaved Write Transaction with Two Dualoct Data Length

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ACT a0

MSK (b2)

WRA c2

MSK (b1)

WR c1

WR b1

MSK (a1)

WRA b2

MSK (a2)

D (b2)

D (b1)

ACT b0

ACT c0

ACT d0

ACT e0

D (a2)

D (a1)

WR d1

MSK (c1)

D(c1)

ACT f0

WR d2

MSK (c2)

WR e1

MSK (d1)

D (c2)

D (d1)

WR e2

MSK (d2)

D (z2)

D (z1)

D (x2)

D (y1)

D (y2)

MSK (z2)

WRA a2

MSK (z1)

WR a1

WR z1

MSK (y1)

WRA z2

MSK (y2)

Q (

RCD

CWD

Transaction e can use the

same bank as transaction a

f3 = {Da,Ba+2}

Transaction f: WR

f0 = {Da,Ba+2,Rf}

f1 = {Da,Ba+2,Cf1}

f2= {Da,Ba+2,Cf2}

e3 = {Da,Ba}

Transaction e: WR

e0 = {Da,Ba,Re}

e1 = {Da,Ba,Ce1}

e2= {Da,Ba,Ce2}

d3 = {Da,Ba+6}

Transaction d: WR

d0 = {Da,Ba+6,Rd}

d1 = {Da,Ba+6,Cd1}

d2= {Da,Ba+6,Cd2}

c3 = {Da,Ba+4}

Transaction c: WR

c0 = {Da,Ba+4,Rc}

c1 = {Da,Ba+4,Cc1}

c2= {Da,Ba+4,Cc2}

b3 = {Da,Ba+2}

Transaction b: WR

b0 = {Da,Ba+2,Rb}

b1 = {Da,Ba+2,Cb1}

b2= {Da,Ba+2,Cb2}

a3 = {Da,Ba}

Transaction a: WR

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a2= {Da,Ba,Ca2}

z3 = {Da,Ba+6}

Transaction z: WR

z0 = {Da,Ba+6,Rz}

z1 = {Da,Ba+6,Cz1}

z2= {Da,Ba+6,Cz2}

y3 = {Da,Ba+4}

Transaction y: WR

y0 = {Da,Ba+4,Ry}

y1 = {Da,Ba+4,Cy1}

y2= {Da,Ba+4,Cy2}

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

17. Interleaved Read - Example

Figure 17-1 shows an example of interleaved read transactions. Transactions similar to the one presented in Figure

13-1 are directed to non-adjacent banks of a single RDRAM device. The address sequence is identical to the one

used in the previous write example. The DQ data pins efficiency is also 100%. The only difference with the write

example (aside from the use of the RD command rather than the WR command) is the use of the PREX command in

a COLX packet to precharge the banks rather than the RDA command. This is done because the PREX is available

for a read transaction but is not available for a masked write transaction.

Figure 17-1 Interleaved Read Transaction with Two Dualoct Data Length

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ACT a0

PREX b3

RD c2

RD c1

RD b1

RD b2

PREX a3

ACT b0

ACT c0

ACT d0

ACT e0

RD a1

RD a2

PREX z3

RD d1

RDd2

PREX c3

RD e1

RD e2

PREX d3

RD z1

RD z2

PREX y3

Q (b2)

Q (b1)

Q (a2)

Q (a1)

Q (c1)

Q (c2)

Q (d1)

Q (z2)

Q (z1)

Q (x2)

Q (y1)

Q (y2)

RCD

CAC

Transaction e can use the

same bank as transaction a

f3 = {Da,Ba+2}

Transaction f: RD

f0 = {Da,Ba+2,Rf}

f1 = {Da,Ba+2,Cf1}

f2= {Da,Ba+2,Cf2}

e3 = {Da,Ba}

Transaction e: RD

e0 = {Da,Ba,Re}

e1 = {Da,Ba,Ce1}

e2= {Da,Ba,Ce2}

d3 = {Da,Ba+6}

Transaction d: RD

d0 = {Da,Ba+6,Rd}

d1 = {Da,Ba+6,Cd1}

d2= {Da,Ba+6,Cd2}

c3 = {Da,Ba+4}

Transaction c: RD

c0 = {Da,Ba+4,Rc}

c1 = {Da,Ba+4,Cc1}

c2= {Da,Ba+4,Cc2}

b3 = {Da,Ba+2}

Transaction b: RD

b0 = {Da,Ba+2,Rb}

b1 = {Da,Ba+2,Cb1}

b2= {Da,Ba+2,Cb2}

a3 = {Da,Ba}

Transaction a: RD

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a2= {Da,Ba,Ca2}

z3 = {Da,Ba+6}

Transaction z: RD

z0 = {Da,Ba+6,Rz}

z1 = {Da,Ba+6,Cz1}

z2= {Da,Ba+6,Cz2}

y3 = {Da,Ba+4}

Transaction y: RD

y0 = {Da,Ba+4,Ry}

y1 = {Da,Ba+4,Cy1}

y2= {Da,Ba+4,Cy2}

ACT f0

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

18. Interleaved RRWW - Example

Figure 18-1 shows a steady-state sequence of 2-dualoct RD/RD/WR/WR.. transactions directed to non-adjacent

banks of a single RDRAM device. This is similar to the interleaved write and read examples in Figure 16-1 and

Figure 17-1 except that bubble cycles need to be inserted by the controller at read/write boundaries. The DQ data

pin efficiency for the example in Figure 18-1 is 32/42 or 76%. If there were more RDRAM devices on the Channel,

the DQ pin efficiency would approach 32/34 or 94% for the two-dualoct RRWW sequence (this case is not shown).

In Figure 18-1, the first bubble type t

CBUB1

is inserted by the controller between a RD and WR command on the COL

pins. This bubble accounts for the round-trip propagation delay that is seen by read data, and is explained in detail in

Figure 4-1. This bubble appears on the DQA and DQB pins as t

DBUB1

between a write data dualoct D and read data

dualoct Q. This bubble also appears on the ROW pins as t

RBUB1

The second bubble type t

CBUB2

is inserted (as a NOCOP command) by the controller between a WR and RD

command on the COL pins when there is a WR-WR-RD sequence to the same device. This bubble enables write

data to be retired from the write buffer without being lost, and is explained in detail in Figure 15-2. There would be no

bubble if address c0 and address d0 were directed to different devices. This bubble appears on the DQA and DQB

pins as t

DBUB2

between a write data dualoct D and read data dualoct Q. This bubble also appears on the ROW pins

as t

RBUB2

Figure 18-1 Interleaved RRWW Sequence with Two Dualoct Data Length

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ACT a0

MSK (b2)

WRA c2

MSK (b1)

WR c1

WR b1

MSK (y2)

WRA b2
PREX a3

D (b2)

D (b1)

ACT b0

ACT c0

ACT d0

ACT e0

RD a1

RD a2

PREX z3

Q (a2)

Q (a1)

MSK (c1)

D (c1)

NOCOP

RDd0

D (c2)

RBUB1

RD f

Q (z2)

Q (z1)

D (y2)

RD z1

RD z2

CBUB1

DBUB1

DBUB2

CBUB2

RBUB2

CBUB2

NOCOP

f3 = {Da,Ba+2}

Transaction f: WR

f0 = {Da,Ba+2,Rf}

f1 = {Da,Ba+2,Cf1}

f2= {Da,Ba+2,Cf2}

e3 = {Da,Ba}

Transaction e: RD

e0 = {Da,Ba,Re}

e1 = {Da,Ba,Ce1}

e2= {Da,Ba,Ce2}

d3 = {Da,Ba+6}

Transaction d: RD

d0 = {Da,Ba+6,Rd}

d1 = {Da,Ba+6,Cd1}

d2= {Da,Ba+6,Cd2}

c3 = {Da,Ba+4}

Transaction c: WR

c0 = {Da,Ba+4,Rc}

c1 = {Da,Ba+4,Cc1}

c2= {Da,Ba+4,Cc2}

b3 = {Da,Ba+2}

Transaction b: WR

b0 = {Da,Ba+2,Rb}

b1 = {Da,Ba+2,Cb1}

b2= {Da,Ba+2,Cb2}

a3 = {Da,Ba}

Transaction a: RD

a0 = {Da,Ba,Ra}

a1 = {Da,Ba,Ca1}

a2= {Da,Ba,Ca2}

z3 = {Da,Ba+6}

Transaction z: RD

z0 = {Da,Ba+6,Rz}

z1 = {Da,Ba+6,Cz1}

z2= {Da,Ba+6,Cz2}

y3 = {Da,Ba+4}

Transaction y: WR

y0 = {Da,Ba+4,Ry}

y1 = {Da,Ba+4,Cy1}

y2= {Da,Ba+4,Cy2}

Transaction e can use the
same bank as transaction a

MSK (c2)

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

19. Control Register Transactions

The RDRAM device has two CMOS input pins SCK and CMD and two CMOS input/output pins SIO0 and SIO1.

These provide serial access to a set of control registers in the device. These control registers provide configuration

information to the controller during the initialization process. They also allow an application to select the appropriate

operating mode of the device. SCK (serial clock) and CMD (command) are driven by the controller to all devices in

parallel. SIO0 and SIO1 are connected (in a daisy chain fashion) from one device to the next. In normal operation,

the data on SIO0 is repeated on SIO1, which connects to SIO0 of the next device (the data is repeated from SIO1 to

SIO0 for a read data packet). The controller connects to SIO0 of the first device.

Write and read transactions are each composed of four packets, as shown in Figure 19-1 and Figure 19-2. Each

packet consists of 16 bits, as summarized in Table 20-1 and Table 20-2. The packet bits are sampled on the falling

edge of SCK. A transaction begins with a SRQ (Serial Request) packet. This packet is framed with a 11110000

pattern on the CMD input (note that the CMD bits are sampled on both the falling edge and the rising edge of SCK).

The SRQ packet contains the SOP3..SOP0 (Serial Opcode) field, which selects the transaction type. The

SDEV5..SDEV0 (Serial Device address) selects one of the 32 devices. If SBC (Serial Broadcast) is set, then all

devices are selected. The SA (Serial Address) packet contains a 12 bit address for selecting a control register.

A write transaction has a SD (Serial Data) packet next. This contains 16 bits of data that is written into the selected

control register. A SINT (Serial Interval) packet is last, providing some delay for any side-effects to take place. A

read transaction has a SINT packet, then a SD packet. This provides delay for the selected device to access the

control register. The SD read data packet travels in the opposite direction (towards the controller) from the other

packet types. Because the device drives data on the falling SCK edge, the read data transmit window is offset

SCYCLE

/2 relative to the other packet types. The SCK cycle time will accommodate the total propagation delay.

Figure 19-1 Serial Write (SWR) Transaction to Control Register

SRQ - SWR command

1111

00000000...00000000

SRQ - SWR command

0000

SINT

00000000...00000000

SCK

CMD

SIO0

SIO1

Each packet is repeated

from SIO0 to SIO1

1111

next transaction

Figure 19-2 Serial Read (SRD) Transaction Control Register

SRQ - SRD command

1111

00000000...00000000

SRQ - SRD command

0000

SINT

00000000...00000000

SCK

CMD

SIO

First 3 packets are repeated

from SIO0 to SIO1

1111

next transaction

addressed RDRAM devices

0/SD15..SD0/0 on SIO0

controller drives

0 on SIO0

non addressed RDRAMs pass

0/SD15..SD0/0 from SIO1 to SIO0

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

20. Control Register Packets

Table 20-1 summarizes the formats of the four packet

types for control register transactions. Table 20-2

summarizes the fields that are used within the packets.

Figure 20-1 shows the transaction format for the SETR,

CLRR, and SETF commands. These transactions consist

of a single SRQ packet, rather than four packets like the

SWR and SRD commands. The same framing sequence

on the CMD input is used, however.

Table 20-1 Control Register Packet Formats

SCK

Cycle

SIO0 or

SIO1

for SRQ

SIO0 or

SIO1

for SA

SIO0 or

SIO1

for SINT

SIO0 or

SIO1

for SD

SCK

Cycle

SIO0 or

SIO1

for SRQ

SIO0 or

SIO1

for SA

SIO0 or

SIO1

for SINT

SIO0 or

SIO1

for SD

0 rsrv rsrv 0 SD15

8 SOP1

SA7

0 SD7

1 rsrv rsrv 0 SD14

9 SOP0

SA6

0 SD6

rsrv

0 SD13

SBC

SA5

0 SD5

rsrv

0 SD12

SDEV4

SA4

0 SD4

rsrv

SA11

0 SD11

SDEV3

SA3

0 SD3

SDEV5

SA10

0 SD10

SDEV2

SA2

0 SD2

6 SOP3

SA9 0

SD9 14 SDEV1

SA1 0

SD1

7 SOP2

SA8 0

SD8 15 SDEV0

SA0 0

SD0

Table 20-2 Field Description for Control Register Packets

Field Description

rsrv

Reserved. Should be driven as "0" by controller.

SOP3..SOP0

0000 - SRD. Serial read of control register {SA11..SA0} of RDRAM device {SDEV5..SDEV0}.

0001 - SWR. Serial write of control register {SA11..SA0} of RDRAM device {SDEV5..SDEV0}.

0010 - SETR. Set Reset bit, all control registers assume their reset values.

Note1

16 t

SCYCLE

delay

until CLRR

Note2

command.

0100 - SETF. Set fast (normal) clock mode. 4 t

SCYCLE

delay until next command.

1011 - CLRR. Clear Reset bit, all control registers retain their reset values.

Note1

4 t

SCYCLE

delay until next

command.

1111 - NOP. No serial operation.

0011,

0101

1010, 1100 1110 RSRV. Reserved encodings.

SDEV5..SDEV0

Serial device. Compared to SDEVID5..SDEVID0 field of INIT control register field to select the RDRAM

device to which the transaction is directed.

SBC

Serial broadcast. When set, RDRAM devices ignore {SDEV5..SDEV0} for RDRAM device selection.

SA11..SA0

Serial address. Selects which control register of the selected RDRAM device is read or written.

SD15..SD0

Serial data. The 16 bits of data written to or read from the selected control register of the selected RDRAM

device.

Notes 1 The SETR and CLRR commands must always be applied in two successive transactions to RDRAM devices; i.e. they

may not be used in isolation. This is called "SETR/CLRR Reset".

A minimum gap equal to the larger of (16

SCYCLE

, 2816

CYCLE

) must be inserted between a SETR/CLRR command pair.

Figure 20-1 SETR, CLRR, SETF Transaction

SCK

CMD

SIO0

SRQ packet - SETR/CLRR/SETF

1111

00000000...00000000

SRQ packet - SETR/CLRR/SETF

0000

SIO1

The packet is repeated

from SIO0 to SIO1

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

21. Initialization

Figure 21-1 SIO Pin Reset Sequence

SCK

CMD

SIO0

0000000000000000

00000000...00000000

0000000000000000

SIO1

The packet is repeated

from SIO0 to SIO1

00001100

Initialization refers to the process that a controller must go through after power is applied to the system or the system

is reset. The controller prepares the RDRAM sub-system for normal Channel operation by (primarily) using a

sequence of control register transactions on the serial CMOS pins. The following steps outline the sequence seen by

the various memory subsystem components (including the RDRAM components) during initialization. This sequence

is available in the form of reference code. Contact Rambus Inc. for more information.

1.0 Start Clocks

This step calculates the proper clock frequencies for PClk (controller logic), SynClk (RAC block), RefClk (DRCG

component), CTM (RDRAM component), and SCK (SIO block).

2.0 RAC Initialization

This step causes the INIT block to generate a sequence of pulses which resets the RAC, performs RAC

maintainance operations, and measures timing intervals in order to ensure clock stability.

3.0 RDRAM device Initialization

This stage performs most of the steps needed to initialize the RDRAM devices. The rest are performed in stages

5.0, 6.0, and 7.0. All of the steps in 3.0 are carried out through the SIO block interface.

3.1/3.2 SIO Reset

This reset operation is performed before any SIO control register read or write transactions. It clears six

registers (TEST34, CCA, CCB, SKIP, TEST78, and TEST79) and places the INIT register into a special state

(all bits cleared except SKP and SDEVID fields are set to ones). SCK must be held low until SIO Reset.

3.3 Write TEST77 Register

The TEST77 register must be explicitly written with zeros before any other registers are read or written.

3.4 Write TCYCLE Register

The TCYCLE register is written with the cycle time t

CYCLE

of the CTM clock (for Channel and RDRAM devices)

in units of 64ps. The t

CYCLE

value is determined in stage 1.0.

3.5 Write SDEVID Register

The SDEVID (serial device identification) register of each RDRAM device is written with a unique address

value so that directed SIO read and write transactions can be performed. This address value increases from 0

to 31 according to the distance an RDRAM device is from the ASIC component on the SIO bus (the closest

RDRAM device is address 0).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

3.6 Write DEVID Register

The DEVID (device identification) register of the RDRAM device is written with a unique address value so that

directed memory read and write transactions can be performed. This address value increases from 0 to 31.

The DEVID value is not necessarily the same as the SDEVID value. RDRAM devices are sorted into regions

of the same core configuration (number of bank, row, and column address bits and core type).

3.7 Write PDNX, PDNXA Registers

The PDNX and PDNXA registers are written with values that are used to measure the timing intervals

connected with an exit from the PDN (powerdown) power state.

3.8 Write NAPX Register

The NAPX register is written with values that are used to measure the timing intervals connected with an exit

from the NAP power state.

3.9 Write TPARM Register

The TPARM register is written with values which determine the time interval between a COL packet with a

memory read command and the Q packet with the read data on the Channel. The values written set the

RDRAM to the minimum value permitted for the system. This will be adjusted later in stage 6.0.

3.10 Write TCDLY1 Register

The TCDLY1 register is written with values which determine the time interval between a COL packet with a

memory read command and the Q packet with the read data on the Channel. The values written set the

RDRAM to the minimum value permitted for the system. This will be adjusted later in stage 6.0.

3.11 Write TFRM Register

The TFRM register is written with a value that is related to the t

RCD

parameter for the system. The t

RCD

parameter is the time interval between a ROW packet with an activate command and the COL packet with a

read or write command.

3.12 SETR/CLRR

Each RDRAM device is given a SETR command and a CLRR command through the SIO block. This

sequence performs a second reset operation on the RDRAM devices.

3.13 Write CCA and CCB Registers

These registers are written with a value halfway between their minimum and maximum values. This shortens

the time needed for the RDRAM devices to reach their steady-state current control values in stage 5.0.

3.14 Powerdown Exit

The RDRAM devices are in the PDN power state at this point. A broadcast PDNExit command is performed

by the SIO block to place the RDRAM devices in the RLX (relax) power state in which they are ready to

receive ROW packets.

3.15 SETF

Each RDRAM device is given a SETF command through the SIO block. One of the operations performed by

this step is to generate a value for the AS (autoskip) bit in the SKIP register and fix the RDRAM device to a

particular read domain.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

4.0 Controller Configuration

This stage initializes the controller block. Each step of this stage will set a field of the ConfigRMC[63:0] bus to the

appropriate value. Other controller implementations will have similar initialization requirements, and this stage

may be used as a guide.

4.1 Initial Read Data Offset

The ConfigRMC bus is written with a value which determines the time interval between a COL packet with a

memory read command and the Q packet with the read data on the Channel. The value written sets RMC.d1

to the minimum value permitted for the system. This will be adjusted later in stage 6.0.

4.2 Configure Row/Column Timing

This step determines the values of the t

RAS,MIN

, t

RP,MIN

, t

RC,MIN

, t

RCD,MIN

, t

RR,MIN

, and t

PP,MIN

RDRAM timing

parameters that are present in the system. The ConfigRMC bus is written with values that will be compatible

with all RDRAM devices that are present.

4.3 Set Refresh Interval

This step determines the values of the t

REF,MAX

RDRAM timing parameter that are present in the system. The

ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.

4.4 Set Current Control Interval

This step determines the values of the t

CCTRL,MAX

RDRAM timing parameter that are present in the system.

The ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.

4.5 Set Slew Rate Control Interval

This step determines the values of the t

TEMP,MAX

RDRAM timing parameter that are present in the system. The

ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.

4.6 Set Bank/Row/Col Address Bits

This step determines the number of RDRAM bank, row, and column address bits that are present in the

system. It also determines the RDRAM core types (independent, doubled, or split) that are present. The

ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.

5.0 RDRAM Current Control

This step causes the INIT block to generate a sequence of pulses which performs RDRAM maintenance

operations.

6.0 RDRAM Core, Read Domain Initialization

This stage completes the RDRAM device initialization

6.1 RDRAM Core Initialization

A sequence of 192 memory refresh transactions is performed in order to place the cores of all RDRAM

devises into the proper operating state.

6.2 RDRAM Read Domain Initialization

A memory write and memory read transaction is performed to each RDRAM device to determine which read

domain each RDRAM device occupies. The programmed delay of each RDRAM device is then adjusted so

the total RDRAM read delay (propagation delay plus programmed delay) is constant. The TPARM and

TCDLY1 registers of each RDRAM device are rewritten with the appropriate read delay values. The

ConfigRMC bus are also rewritten with an updated value.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

7.0 Other RDRAM Register Fields

This stage rewrites the INIT register with the final values of the LSR, NSR, and PSR fields.

In essence, the controller must read all the read-only configuration registers of all RDRAM devices (or it must

read the SPD device present on each RIMM), it must process this information, and then it must write all the read-

write registers to place the RDRAM devices into the proper operating mode.

Initialization Note :

1. During the initialization process, it is necessary for the controller to perform 128 current control operations

(3xCAL, 1xCAL/SAM) and one temperature calibrate operation (TCEN/TCAL) after reset or after powerdown

(PDN) exit.

2. The behavior of EDR2518ABSE at initialization is as follows. It is distinguished by the "S28IECO" bit in the

SPD.

S28IECO=1: Upon powerup, the device enters PDN state. The serial operations SETR, CLRR, and SETF

require a SDEVID match.

See the document detailing the reference initialization procedure for more information on how to handle this in

a system.

3. After the step of equalizing the total read delay of the RDRAM device has been completed (i.e. after the

TCDLY0 and TCDLY1 fields have been written for the final time), a single final memory read transaction

should be made to the RDRAM device in order to ensure that the output pipeline stages have been cleared.

4. The SETF command (in the serial SRQ packet) should only be issued once during the Initialization process,

as should the SETR and CLRR commands.

5. The CLRR command (in the serial SRQ packet) leaves some of the contents of the memory core in an

indeterminate state.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

22. Control Register Summary

Table 22-1 summarizes the RDRAM control registers. Detail is provided for each control register in Figure 22-1.

Read-only bits which are shaded gray are unused and return zero. Read-write bits which are shaded gray are

reserved and should always be written with zero. The RIMM

SPD Application Note (DL-0054) of Rambus Inc.

describes additional read-only configuration registers which are present on Direct RIMMs.

The state of the register fields are potentially affected by the IO Reset operation or the SETR/CLRR operation. This

is indicated in the text accompanying each register diagram.

Table 22-1 Control Register Summary (1/2)

SA11..SA0 Register

Field read-write/

read-only

Description

021

INIT

SDEVID

read-write, 6 bits

Serial device ID. Device address for control register read/write.

PSX

read-write, 1 bit

Power select exit. PDN/NAP exit with device addr on DQA5..0.

SRP

read-write, 1 bit

SIO repeater. Used to initialize RDRAM devices.

NSR

read-write, 1 bit

NAP self-refresh. Enables self-refresh in NAP mode.

PSR

read-write, 1 bit

PDN self-refresh. Enables self-refresh in PDN mode.

LSR

read-write, 1 bit

Low power self-refresh. Enables low power self-refresh.

read-only, 1 bit

Output undefined

DIS

read-write, 1 bit

RDRAM device disable.

IDM

read-write, 1 bit

Interleaved Device Mode enable. IDM = 0 for version 3 device.

022

TEST34

read-write, 16 bits

Test register.

023

CNFGA

REFBIT

read-only, 3 bits

Refresh bank bits. Used for multi-bank refresh.

DBL

read-only, 1 bit

Double. Specifies doubled-bank architecture.

MVER

read-only, 6 bits

Manufacturer version. Manufacturer identification number.

PVER

read-only, 6 bits

Protocol version. Specifies version of Direct protocol supported.

024

CNFGB

BYT

read-only, 1 bit

Byte. Specifies an 8-bit or 9-bit byte size.

DEVTYP

read-only, 3 bits

Device type. Device can be RDRAM device or some other device

category.

SPT

read-only, 1 bit

Split-core. Each core half is an individual dependent core.

CORG

read-only, 6 bits

Core organization. Bank, row, column address field sizes.

SVER

read-only, 6 bits

Stepping version. Mask version number.

040

DEVID

read-write, 5 bits

Device ID. Device address for memory read/write.

041

REFB

read-write, 4 bits

Refresh bank. Next bank to be refreshed by self-refresh.

042

REFR

read-write, 9 bits

Refresh row. Next row to be refreshed by REFA, self-refresh.

043

CCA

read-write, 7 bits

Current control A. Controls I

output current for DQA.

ASYMA

read-write, 2 bits

Asymmetry control. Controls asymmetry of V

swing for DQA.

044

CCB

read-write, 7 bits

Current control B. Controls I

output current for DQB.

ASYMB

read-write, 2 bits

Asymmetry control. Controls asymmetry of V

swing for DQB.

045

NAPX

NAPXA

read-write, 5 bits

NAP exit. Specifies length of NAP exit phase A.

NAPX

read-write, 5 bits

NAP exit. Specifies length of NAP exit phase A + phase B.

DQS

read-write, 1 bit

DQ select. Selects CMD framing for NAP/PDN exit.

046

PDNXA

read-write, 13 bits

PDN exit. Specifies length of PDN exit phase A.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Table 22-1 Control Register Summary (2/2)

SA11..SA0 Register

Field

read-write/

read-only

Description

047

PDNX

read-write, 13 bits

PDN exit. Specifies length of PDN exit phase A + phase B.

048

TPARM TCAS

read-write, 2 bits

CAS-C

core parameter. Determines t

OFFP

datasheet parameter.

TCLS

read-write, 2 bits

CLS-C

core parameter. Determines t

CAC

and t

OFFP

parameters.

TCDLY0

read-write, 3 bits

CDLY0-C

core parameter. Programmable delay for read data.

049

TFRM

read-write, 4 bits

FRM-C

core parameter. Determines ROW - COL packet framing interval.

04a

TCDLY1 TCDLY1

read-write, 3 bits

CDLY-1

core parameter. Programmable delay for read data.

04c

TCYCLE TCYCLE

read-write, 14 bits

CYCLE

datasheet parameter. Specifies cycle time in 64ps units.

04b

SKIP

read-only, 1 bit

Autoskip value established by the SETF command.

MSE

read-write, 1 bit

Manual skip enable. Allows the MS value to override the AS value.

read-write, 1 bit

Manual skip value.

04d

TEST77 TEST77

read-write, 16 bits

Test register. Write with zero after SIO reset.

04e

TEST78 TEST78

read-write, 16 bits

Test register. Do not read or write after SIO reset.

04f

TEST79 TEST79

read-write, 16 bits

Test register. Do not read or write after SIO reset.

055

TCPS

read-write,

2bits t

CPS-C

core parameter. Determines t

OFFP

parameters. (Version 3 only)

080

-Off

reserved reserved

vendor-specific

Vendor-specific test registers. Do not read or write after SIO reset.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 22-1 Control Registers (1/7)

Control Register : INIT

Address : 021

10 9 8 7 6 5 4 3 2 1 0

IDM

SDE

VID5

DIS X

Note

0 LSR

PSR

NSR

SRP

PSX 0

SDEVID4..0

Read/write register.

Reset values are undefined except as affected by SIO Reset as noted below. SETR/CLRR Reset does not affect this register.

Note Read-only bit. Output undefined.

Field Description

Reset
value

IDM

Interleaved Device Mode enable. IDM = 0 for version 3 device.

SDEVID5..0 Serial Device Identification. Compared to SDEVID5..0 serial address field of serial request packet for register

read/write transactions. This determines which RDRAM device is selected for the register read or write

operation.

DIS

RDRAM disable. DIS=1 causes RDRAM device to ignore NAP/PDN exit sequence, DIS=0 permit normal

operation. This mechanism disables an RDRAM device.

LSR

Low Power Self-Refresh. This function is not supported. LSR value must be 0.

PSR

PDN Self-Refresh. PSR=1 enables self-refresh in PDN mode. PSR can't be set while in PDN mode.

NSR

NAP Self-Refresh. NSR=1 enables self-refresh in NAP mode. NSR can't be set while in NAP mode.

SRP

SIO Repeater. Controls value on SIO1; SIO1=SIO0 if SRP=1, SIO1=1 if SRP=0.

PSX

Power Exit Select. PDN and NAP are exited with (=0) or without (=1) a device address on the DQA5..0 pins.

PDEV5 (on DQA5) selectes broadcast (1) or directed (0) exit. For a dircted exit, PDEV4..0 (on DQA4..0) is

compared to DEVID4..0 to select a device.

Control Register : CNFGA

Address : 023

10 9 8 7 6 5 4 3 2 1 0

PVER5..0=000001 MVER5..0=mmmmmm DBL1

REFBIT2..0=101

Read only register.

Field Description

PVER5..0

Protocol Version. Specifies the Direct Protocol version used by this device:

0 Reserved

1 Version 1

2 Version 2 (version 1 + IDM)

3 Version 3 (version 1 + programmable t

CPS

)

MVER5..0

Manufacturer Version. Specifies the manufacturer identification number.

DBL

Doubled-Bank. DBL=1 means the device uses a doubled-bank architecture with adjacent-bank dependency. DBL=0

means no dependency.

REFBIT2..0 Refresh Bank Bits. Specifies the number of bank address bits used by REFA and REFP commands.

Permits multi-bank refresh in future RDRAM devices.

Caution In RDRAM devices with protocol version 1 PVER[5:0] =000001, the range of the PDNX field (PDNX[2:0] in the

PDNX register) may not be large enough to specify the location of the restricted interval in Figure 23-3. In this

case, the effective t

parameter must increase and no row or column packets may overlap the restricted interval.

See Figure 23-3 and Timing conditions table.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 22-1 Control Registers (2/7)

Control Register : CNFGB

Address : 024

10 9 8 7 6 5 4 3 2 1 0

SVER5..0=ssssss CORG4..0=01000

SPT0

DEVTYP2..0=000

BYTB

Read only register.

Field Description

SVER5..0

Stepping version. Specifies the mask version number of this device.

CORG4..0

Core organization. This field specifies the number of bank (5 bits), row (9 bits), and column (7 bits) address bits.

SPT

Split-core. SPT=1 means the core is split, SPT=0 means it is not.

DEVTYP2..0 Device type. DEVTYP=000 means that this device is an RDRAM device.

BYT

Byte width. B=1 means the device reads and writes 9-bit memory bytes.B=0 means 8 bits.

Control Register : TEST34

Address : 022

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0

Write only register.

Reset values of TEST34 is zero (from SIO Reset).

This register are used for testing purposes. It must not be read or written after SIO Reset.

Control Register : DEVID

Address : 040

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0 0 0 0

DEVID4..0

Read/write register.

Reset value is undefined.

Field Description

DEVID4..0

Device Identification register. DEVID4..DEVID0 is compared to DR4..DR0, DC4..DC0, and DX4..DX0 fields for all

memory read or write transactions. This determines which RDRAM device is selected for the memory read or write

transaction.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 22-1 Control Registers (3/7)

Control Register : REFB

Address : 041

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0 0 0 0

REFB4..0

Read/write register.

Field Description

Reset

value

REFB4..0

Reset value is zero (from SETR/CLRR). Refresh Bank Register. REFB4..REFB0 is the bank that will be

refreshed next during self-refresh. REFB4..0 is incremented after each self-refresh activate and precharge

operation pair.

Control Register : REFR

Address : 042

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0

REFR8..0

Read/write register.

Field Description

Reset

value

REFR8..0

Reset value is zero (from SETR/CLRR). Refresh Row register. REFR8..REFR0 is the row that will be

refreshed next by the REFA command or by self-refresh. REFR8..0 is incremented when BR4..0=11111 for

the REFA command. REFR8..0 is incremented when REFB4..0=11111 for self-refresh.

Control Register : CCA

Address : 043

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0

ASYM

CCA6..0

Read/write register.

Reset value is zero (from SETR/CLRR or SIO Reset).

Field Description

Reset

value

ASYMA0

ASYMA0 control the asymmetry of the V

voltage swing about the V

REF

reference voltage for the

DQA8..0 pins.

CCA6..0

Current Control A. Controls the I

output current for the DQA8..DQA0 pins.

Control Register : CCB

Address : 044

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0

ASYM

CCB6..0

Read/write register.

Reset value is zero (from SETR/CLRR or SIO Reset).

Field Description

Reset

value

ASYMB0

ASYMB0 control the asymmetry of the V

voltage swing about the V

REF

reference voltage for the

DQB8..0 pins.

CCB6..0

Current Control B. Controls the I

output current for the DQB8..DQB0 pins.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 22-1 Control Registers (4/7)

Control Register : NAPX

Address : 045

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0

DQS

NAPX4..0

NAPXA4..0

Read/write register.

Reset value is 0525

(SIOReset).

Note t

SCYCLE

CYCLE1

(SCK cycle time).

Field Description

DQS

DQ Select. This field specifies the number of SCK cycles (0

0.5 cycles, 1

1.5 cycles) between the CMD pin

framing sequence and the device selection on DQ5..0. see Figure 23-4. This field must be written with a "1" for this

RDRAM.

NAPX4..0

Nap Exit Phase A plus B. This field specifies the number of SCK cycles during the first plus second phases for exiting

NAP mode. It must satisfy:

NAPX

SCYCLE

NAPXA

SCYCLE

NAPXB

MAX

Do not set this field to zero.

NAPXA4..0

Nap Exit Phase A. This field specifies the number of SCK cycles during the first phase for exiting NAP mode. It must

satisfy:

NAPXA

SCYCLE

NAPXA

MAX

Do not set this field to zero.

Control Register : PDNXA

Address : 046

10 9 8 7 6 5 4 3 2 1 0

0 0 0

PDNXA12..0

Read/write register.

Reset value is 0008

(SIOReset).

Field Description

PDNXA4..0

PDN Exit Phase A. This field specifies the number of (64

SCK cycle) units during the first phase for exiting PDN

mode. It must satisfy:

PDNXA

SCYCLE

PDNXA

MAX

Do not set this field to zero.

Note only PDNXA4..0 are implemented.

Note t

SCYCLE

is t

CYCLE1

(SCK cycle time).

Control Register : PDNX

Address : 047

10 9 8 7 6 5 4 3 2 1 0

0 0 0

PDNX12..0

Read/write register.

Reset value is 0007

(SIOReset).

Field Description

PDNX2..0

PDN Exit Phase A puls B. This field specifies the number of (256

SCK cycle) units during the first plus second phases

for exiting PDN mode. It should satisfy:

PDNX

256

SCYCLE

PDNXA

SCYCLE

PDNXB

MAX

It this equation can't be satisfied, then the maximum PDNX value should be written, and the t

/ t

timing window will

be modified (see Figure 23-4).

Do not set this field to zero.

Note only PDNX2..0 are implemented.

Note t

SCYCLE

is t

CYCLE1

(SCK cycle time).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 22-1 Control Registers (5/7)

Control Register : TPARM

Address : 048

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0 0

TCDLY0

TCLS

TCAL

Read/write register.

Reset value is undefined.

Field Description

TCDLY0

Specifies the t

CDLY0-C

core parameter in t

CYCLE

units. This adds a programmable delay to Q (read data) packets,

permitting round trip read delay to all device to be equalized. This field may be written with the values "011" (3

CYCLE

)

through "101" (5

CYCLE

TCLS1..0

Specifies the t

CLS-C

core parameter in t

CYCLE

units. Should be "10" (2

CYCLE

TCAS1..0

Specifies the t

CAS-C

core parameter in t

CYCLE

units. This should be "10" (2

CYCLE

The equations relating the core parameters to the datasheet parameters follow:

CAS-C

CYCLE

CLS-C

CYCLE

CPS-C

CYCLE

OFFP

CPS-C

+ t

CAS-C

+ t

CLS-C

- 1

CYCLE

RCD

RCD-C

+ 1

CYCLE

CLS-C

RCD-C

- 1

CYCLE

CAC

CYCLE

+ t

CLS-C

+ t

CDLY0-C

+ t

CDLY1-C

(see table below programming ranges)

TCDLY0

CDLY0-C

TCDLY1

CDLY1-C

CAC

CYCLE

=2.50 ns

CAC

CYCLE

=1.875 ns

011 3

CYCLE

000 0

CYCLE

Note

011 3

CYCLE

001 1

CYCLE

not allowed

100 4

CYCLE

000 0

CYCLE

011 3

CYCLE

010 2

CYCLE

not allowed

100 4

CYCLE

001 1

CYCLE

100 4

CYCLE

010 2

CYCLE

101 5

CYCLE

010 2

CYCLE

Note Used only for device bins that support t

CAC

= 8

Control Register : TFRM

Address : 049

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0 0 0 0 0

TFRM3..0

Read/write register.

Reset value is undefined.

Field Description

TFRM3..0

Specifies the position of the framing point in t

CYCLE

units. This value must be greater than or equal to the t

FRM,MIN

parameter. This is the minimum offset between a ROW packet (which places a device at ATTN) and the first COL

packet (directed to that device) which must be framed. This field may be written with the value "0111" (7

CYCLE

)

through "1010" (10

CYCLE

). TFRM is usually set to the value which matches the largest t

RCD,MIN

parameter (modulo

CYCLE

) that is present in an RDRAM device in the memory system. Thus, if an RDRAM device with

RCD,MIN

=11

CYCLE

were present, then TFRM would be programmed to 7

CYCLE

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 22-1 Control Registers (6/7)

Control Register : TCDLY1

Address : 04a

10 9 8 7 6 5 4 3 2 1 0

0 0 0 0 0 0 0 0 0 0 0 0 0

TCDLY1

Read/write register.

Reset value is undefined.

Field Description

TCDLY1

Specifies the value of the t

CDLY1-C

core parameter in t

CYCLE

units. This adds a programmable delay to Q (read data)

packets, permitting round trip read to delay all devices to be equalized. This field may be written with the values "000"

CYCLE

) through "010" (2

CYCLE

). Refer to TPARM Register for more details.

Control Register : SKIP

Address : 04b

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

0 0 0 AS

MSE

0 0 0 0 0 0 0 0 0 0

Read/write register (except AS field).

Reset value is zero (SIO Reset).

Field Description

Manual skip (MS=1 corresponds to the early Q(a1) packet and AS=0 to the Q(a1) packet one t

CYCLE

later for the four

uncertain cases in Figure34-1.).

MSE

Manual skip enable (0=auto, 1=manual ).

Autoskip. Read-only value determined by autoskip circuit and stored when SETF serial command is received by

RDRAM during initialization. In Figure34-1, AS=1 corresponds to the early Q(a1) packet and AS=0 to the Q(a1) packet

one t

CYCLE

later for the four uncertain cases.

Control Register : TCYCLE

Address : 04c

10 9 8 7 6 5 4 3 2 1 0

0 0

TCYCLE13..0

Read/write register.

Reset value is undefined.

Field Description

TCYCLE13..0 Specifies the value of the t

CYCLE

datasheet parameter in 64ps units. For the t

CYCLE,MIN

of 2.50 ns (2500ps), this field

should be written with the value "00027

" (39

64ps).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

23. Power State Management

Table 23-1 summarizes the power states available to an RDRAM device. In general, the lowest power states have

the longest operational latencies. For example, the relative power levels of PDN state and STBY state have a ratio of

about 1:110, and the relative access latencies to get read data have a ratio of about 250:1.

PDN state is the lowest power state available. The information in the RDRAM core is usually maintained with self-

refresh; an internal timer automatically refreshes all rows of all banks. PDN has a relatively long exit latency because

the TCLK/RCLK block must resynchronize itself to the external clock signal.

NAP state is another low-power state in which either self-refresh or REFA-refresh are used to maintain the core.

See 24. Refresh for a description of the two refresh mechanisms. NAP has a shorter exit latency than PDN because

the TCLK/RCLK block maintains its synchronization state relative to the external clock signal at the time of NAP

entry. This imposes a limit (t

NLIMIT

) on how long an RDRAM device may remain in NAP state before briefly returning

to STBY or ATTN to update this synchronization state.

Table 23-1 Power State Summary

Power State Description

Blocks consuming power Power state Description

Blocks consuming power

PDN

Powerdown state.

Self-refresh

NAP

Nap state. Similar to

PDN except lower

wake-up latency.

Self-refresh or

REFA-refresh

TCLK/RCLK-Nap

STBY Standby

state.

Ready for ROW

packets.

REFA-refresh

TCLK/RCLK

ROW demux receiver

ATTN Attention

state.

Ready for ROW and

COL packets.

REFA-refresh

TCLK/RCLK

ROW demux receiver

COL demux receiver

ATTNR

Attention read state.

Ready for ROW and

COL packets.

Sending Q (read data)

packets.

REFA-refresh

TCLK/RCLK

ROW demux receiver

COL demux receiver

DQ mux transmitter

Core power

ATTNW

Attention write state.

Ready for ROW and

COL packets.

Ready for D (write data)

packets.

REFA-refresh

TCLK/RCLK

ROW demux receiver

COL demux receiver

DQ demux receiver

Core power

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 23-1 summarizes the transition conditions needed for moving between the various power states.

Figure 23-1 Power State Transition Diagram

automatic

ATTNR

ATTNW

ATTN

STBY

SETR/CLRR

NAPR

Notation:
SETR/CLRR - SETR/CLRR Reset sequence in SRQ packet
PDNR - PDNR command in ROWR packet
NAPR - NAPR command in ROWR packet
RLXR - RLX command in ROWR packet
RLX - RLX command in ROWR,COLC,COLX packets
SIO0 - SIO0 input value
PDEV.CMD - (PDEV=DEVID)·(CMD=01)
ATTN - ROWA packet(non-broadcast) or ROWR packet
(non-broadcast) with ATTN command

NLIMIT

NAP

NAPR

PDEV.CMD·SIO0

PDN

PDNR

PDEV.CMD·SIO0

NAPR

PDNR

NAPR

PDNR

ATTN

RLX

At initialization, the SETR/CLRR Reset sequence will put the RDRAM device into PDN state. The PDN exit

sequence involves an optional PDEV specification and bits on the CMD and SIO

pins.

Once the RDRAM device is in STBY, it will move to the ATTN/ATTNR/ATTNW states when it receives a non-

broadcast ROWA packet or non-broadcast ROWR packet with the ATTN command. The RDRAM device returns to

STBY from these three states when it receives a RLX command. Alternatively, it may enter NAP or PDN state from

ATTN or STBY states with a NAPR or PDNR command in an ROWR packet. The PDN or NAP exit sequence

involves an optional PDEV specification and bits on the CMD and SIO0

pins. The RDRAM device returns to the

STBY state it was originally in when it first entered NAP or PDN.

An RDRAM device may only remain in NAP state for a time t

NLIMIT

. It must periodically return to ATTN or STBY.

The NAPRC command causes a napdown operation if the RDRAM device's NCBIT is set. The NCBIT is not directly

visible. It is undefined on reset. It is set by a NAPR command to the RDRAM device, and it is cleared by an ACT

command to the RDRAM device. It permits a controller to manage a set of RDRAM devices in a mixture of power

states.

STBY state is the normal idle state of the RDRAM device. In this state all banks and sense amps have usually been

left precharged and ROWA and ROWR packets on the ROW pins are being monitored. When a non-broadcast

ROWA packet or non-broadcast ROWR packet(with the ATTN command) packet addressed to the RDRAM device is

seen, the RDRAM device enters ATTN state (see the right side of Figure 23-2). This requires a time t

during which

the RDRAM device activates the specified row of the specified bank. A time TFRM

CYCLE

after the ROW packet, the

RDRAM device will be able to frame COL packets (TFRM is a control register field see Figure 22-1(5/7) "TFRM

Register"). Once in ATTN state, the RDRAM device will automatically transition to the ATTNW and ATTNR states as

it receives WR and RD commands.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Once the RDRAM device is in ATTN, ATTNW, or ATTNR states, it will remain there until it is explicitly returned to

the STBY state with a RLX command. A RLX command may be given in an ROWR, COLC, or COLX packet (see the

left side of Figure 23-2). It is usually given after all banks of the RDRAM device have been precharged; if other

banks are still activated, then the RLX command would probably not be given.

If a broadcast ROWA packet or ROWR packet (with the ATTN command) is received, the RDRAM device's power

state doesn't change. If a broadcast ROWR packet with RLXR command is received, the RDRAM device goes to

STBY.

Figure 23-2 STBY Entry (left) and STBY Exit (right)

STBY

ATTN

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

RLXR

Power

State

ATTN

Power

State

STBY

ROP a0

RLXC
RLXX

TFRM·t

CYCLE

COP a1

XOP a1

COP a0

XOP a0

ROP=non-broadcast
ROWA or ROWR/ATTN

a0={d0, b0, r0}
a1={d1, b1, c1}

No COL packets may be
placed in the three
indicated positions; i.e. at
(TFRM-{1,2,3})·t

CYCLE

A COL packet to device d0
(or any other device) is okay at
(TFRM)·t

CYCLE

or later.

A COL packet to another device
(d1!=d0) is okay at
(TFRM-4)·t

CYCLE

or earlier.

Figure 23-3 shows the NAP entry sequence (left). NAP state is entered by sending a NAPR command in a ROW

packet. A time t

ASN

is required to enter NAP state (this specification is provided for power calculation purposes). The

clock on CTM/CFM must remain stable for a time t

after the NAPR command.

Figure 23-3 NAP Entry (left) and PDN Entry (right)

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ASN

ROP a0

(NAPR)

Power

State

ATTN/STBY

Note

Power

State

NAP

ATTN/STBY

Note

PDN

ASP

ROP a0

(PDNR)

Note The(eventual) NAP/PDN exit will be to the same ATTN/STBY state the RDRAM was in prior to NAP/PDN entry

a0={d0, b0, r0, c0}
a1={d1, b1, c1, c1}

No ROW or COL packets directed
to device d0 may overlap the
restricted interval. No broadcast
ROW packets may overlap
the quiet interval.

ROW or COL packets to a device
other than d0 may overlap the
restricted interval.

restricted

ROP a1

COP a0
XOP a0

COP a1
XOP a1

restricted

ROP a1

COP a0
XOP a0

COP a1
XOP a1

restricted

ROW or COL packets directed
to device d0 after the restricted
interval will be ignored.

NPQ

The RDRAM device may be in ATTN or STBY state when the NAPR command is issued. When NAP state is

exited, the RDRAM device will return to the STBY. After a NAP exit, the RDRAM device may consume power as if it

is in ATTN state until a RLX command is received.

Figure 23-3 also shows the PDN entry sequence (right). PDN state is entered by sending a PDNR command in a

ROW packet. A time t

ASP

is required to enter PDN state (this specification is provided for power calculation

purposes). The clock on CTM/CFM must remain stable for a time t

after the PDNR command.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

The RDRAM device may be in ATTN or STBY state when the PDNR command is issued. When PDN state is

exited, the RDRAM device will return to the STBY. After a PDX exit, the RDRAM device may consume power as if it

is in ATTN state until a RLX command is received. Also, the current- and slew-rate-control levels are re-established.

The RDRAM device's write buffer must be retired with the appropriate COP command before NAP or PDN are

entered. Also, all the RDRAM device's banks must be precharged before NAP or PDN are entered. The exception to

this is if NAP is entered with the NSR bit of the INIT register cleared (disabling self-refresh in NAP). The commands

for relaxing, retiring, and precharging may be given to the RDRAM device as late as the ROPa0, COPa0, and XOPa0

packets in Figure 23-3. No broadcast packets nor packets directed to the RDRAM device entering NAP or PDN may

overlay the quiet window. This window extends for a time t

NPQ

after the packet with the NAPR or PDNR command.

Figure 23-4 shows the NAP and PDN exit sequences. These sequences are virtually identical; the minor

differences will be highlighted in the following description.

Before NAP or PDN exit, the CTM/CFM clock must be stable for a time t

. Then, on a falling and rising edge of

SCK, if there is a "01" on the CMD input, NAP or PDN state will be exited. Also, on the falling SCK edge the SIO0

input must be at a 0 for NAP exit and 1 for PDN exit.

If the PSX bit of the INIT register is 0, then a device PDEV5..0 is specified for NAP or PDN exit on the DQA5..0 pins.

This value is driven on the rising SCK edge 0.5 or 1.5 SCK cycles after the original falling edge, depending upon the

value of the DQS bit of the NAPX register. If the PSX bit of the INIT register is 1, then the RDRAM device ignores the

PDEV5..0 address packet and exits NAP or PDN when the wake-up sequence is presented on the CMD wire. The

ROW and COL pins must be quiet at a time t

around the indicated falling SCK edge(timed with the PDNX or

NAPX register fields). After that, ROW and COL packets may be directed to the RDRAM device which is now in

STBY state.

Figure 23-5 shows the constraints for entering and exiting NAP and PDN states. On the left side, an RDRAM device

exits NAP state at the end of cycle T

. This RDRAM device may not re-enter NAP or PDN state for an interval of t

NU0

The RDRAM device enters NAP state at the end of cycle T

. This RDRAM device may not re-exit NAP state for an

interval of t

NU1

. The equations for these two parameters depend upon a number of factors, and are shown at the

bottom of the figure. NAPX is the value in the NAPX field in the NAPX register.

On the right side of Figure23-4, an RDRAM device exits PDN state at the end of cycle T

. The RDRAM device may

not re-enter PDN or NAP state for an interval of t

PU0

. The RDRAM device enters PDN state at the end of cycle T

and may not re-exit PDN state for an interval of t

PU1

. The equations for these two parameters depend upon a number

of factors, and are shown at the bottom of the figure. PDNX is the value in the PDNX field in the PDNX register.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 23-4 NAP and PDN Exit

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ROP

SCK

CMD

SIO0

SIO1

0 1

0/1

PDEV5..0

The packet is repeated

from SIO0 to SIO1

restricted

Power

State

NAP/PDN

(NAPX

·t )/(256·PDNX·t )

SCYCLE

COP
XOP

Notes 1. Use 0 for NAP exit, 1 for PDN exit

2. Device selection timing slot is selected by DQS field of NAPX register. The PSX field determines the start of NAP/PDN exit.

Note 1

STBY/ATTN

ROP

COP
XOP

restricted

No ROW packets may overlap
the restricted interval

No COL packets may overlap
the restricted interval if device
PDEV is exiting the NAP or
PDN states

SCYCLE

Note 2

PDEV5..0

Note 2

DQS=0

DQS=1

Note 2,3

Note 2

DQS=0

DQS=1

Note 2

If PSX=1 in Init register,
then NAP/PDN exit is
broadcast (no PDEV field).

Effective hold becomes
t

' = t

+[PDNXA

SCYCLE

+ t

PDNXB,MAX

] - [PDNX

256

SCYCLE

]

if [PDNX

256

SCYCLE

] < [PDNXA

SCYCLE

+ t

PDNXB,MAX

3. The DQS field must be written with "1" for this RDRAM.

Figure 23-5 NAP Entry/Exit Windows (left) and PDN Entry/Exit Windows (right)

CTM/CFM

ROW2

..ROW0

SCK

CMD

0 1

NAPR

t =5·t +(2+NAPX)·t

0 1

CTM/CFM

ROW2

..ROW0

SCK

CMD

PDNR

PDN entry

0 1

PU0

PU1

no entry to NAP or PDN no exit

NU0

NU1

no entry to NAP or PDN

no exit

CYCLE

SCYCLE

NU0

t =8·t - (0.5·t )

CYCLE

SCYCLE

NU1

=23·t

CYCLE

if NSR=0

if NSR=1

t =5·t +(2+256·PDNX)·t

CYCLE

SCYCLE

PU0

t =8·t - (0.5·t )

CYCLE

SCYCLE

PU1

=23·t

CYCLE

if PSR=0

if PSR=1

NAP exit

PDN exit

NAP entry

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

24. Refresh

RDRAM devices, like any other DRAM technology, use volatile storage cells which must be periodically refreshed.

This is accomplished with the REFA command. Figure 24-1 shows an example of this.

The REFA command in the transaction is typically a broadcast command (DR4T and DR4F are both set in the

ROWR packet), so that in all devices bank number Ba is activated with row number REFR, where REFR is a control

devices (ATTN or STBY) will remain unchanged. The controller increments the bank address Ba for the next REFA

command. When Ba is equal to its maximum value, the RDRAM device automatically increments REFR for the next

REFA command.

On average, these REFA commands are sent once every t

REF

BBIT+RBIT

(where BBIT are the number of bank address

bits and RBIT are the number of row address bits) so that each row of each bank is refreshed once every t

REF

interval.

The REFA command is equivalent to an ACT command, in terms of the way that it interacts with other packets (see

Table 6-1). In the example, an ACT command is sent after t

to address b0, a different (non-adjacent) bank than the

REFA command.

A second ACT command can be sent after a time t

to address c0, the same bank (or an adjacent bank) as the

REFA command.

Note that a broadcast REFP command is issued a time t

RAS

after the initial REFA command in order to precharge

the refreshed bank in all RDRAM devices. After a bank is given a REFA command, no other core operations(activate

or precharge) should be issued to it until it receives a REFP.

It is also possible to interleave refresh transactions (not shown). In the figure, the ACT b0 command would be

replaced by a REFA b0 command. The b0 address would be broadcast to all devices, and would be {Broadcast,

Ba+2,REFR}. Note that the bank address should skip by two to avoid adjacent bank interference. A possible bank

incrementing pattern would be: {12, 10, 5, 3, 0, 14, 9, 7, 4, 2, 13, 11, 8, 6, 1, 15, 28, 26, 21, 19, 16, 30, 25, 23, 20, 18,

29, 27, 24, 22, 17, 31}. Every time bank 31 is reached, a REFA command would automatically increment the REFR

A second refresh mechanism is available for use in PDN and NAP power states. This mechanism is called self-

refresh mode. When the PDN power state is entered, or when NAP power state is entered with the NSR control

Self-refresh uses an internal time base reference in the RDRAM device. This causes an activate and precharge to

be carried out once in every t

REF

BBIT+RBIT

interval. The REFB and REFR control registers are used to keep track of

the bank and row being refreshed.

Before a controller places an RDRAM device into self-refresh mode, it should perform REFA/REFP refreshes until

the bank address is equal to the last value (this will be 31 for all sequence). This ensures that no rows are skipped.

Likewise, when a controller returns an RDRAM device to REFA/REFP refresh, it should start with the first bank

address value (12 for the example sequence).

Figure 24-2 illustrates the requirement imposed by the t

BURST

parameter. After PDN or NAP (when self-refresh is

enabled) power states are exited, the controller must refresh all banks of the RDRAM device once during the interval

BURST

after the restricted interval on the ROW and COL buses. This will ensure that regardless of the state of self-

refresh during PDN or NAP, the t

REF, MAX

parameter is met for all banks. During the t

BURST

interval, the banks may be

refreshed in a single burst, or they may be scattered throughout the interval. Note that the first and last banks to be

refreshed in the t

BURST

interval are numbers 12 and 31, in order to match the example refresh sequence.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

Figure 24-1 REFA/REFP Refresh Transaction Example

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

REFA a0

ACT c0

RAS

Transaction a: REFA

a0 = {Broadcast,Ba,REFR}

a1 = {Broadcast,Ba}

Transaction c: xx

c0 = {Dc, ==Ba, Rc}

REFA d0

REF

BBIT+RBIT

BBIT = #bank address bits
RBIT = #row address bits

ACT b0

Transaction d: REFA

d0 = {Broadcast,Ba+1,REFR}

REFB = REFB3..REFB0
REFR = REFR8..REFR0

Transaction b: xx

b0 = {Db, /={Ba,Ba+1,Ba-1}, Rb}

REFP a1

Figure 24-2 NAP/PDN Exit - t

BURST

Requirement

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

ROP

REFA b12

REFA b31

SCK

CMD

SIO0

SIO1

0 1

0/1

The packet is repeated

from SIO0 to SIO1

restricted

Power

State

NAP/PDN

COP
XOP

Notes 1. Use 0 for NAP exit, 1 for PDN exit

2. Device selection timing slot is selected by DQS field of NAPX register

Note 1

ROP

COP
XOP

restricted

DQS=0

DQS=1

Note 2

STBY

SCYCLE

(NAPX

·t )/(256·PDNX·t )

32 bank refresh sequence

BURST

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

25. Current and Temperature Control

Figure 25-1 shows an example of a transaction which performs current control calibration. It is necessary to

perform this operation once to every RDRAM device in every t

CCTRL

interval in order to keep the I

output current in

its proper range.

This example uses four COLX packets with a CAL command. These cause the RDRAM device to drive four

calibration packets Q(a0) a time t

CAC

later. An offset of t

RDTOCC

must be placed between the Q(a0) packet and read

data Q(a1) from the same device. These calibration packets are driven on the DQA4..3 and DQB4..3 wires. During

current calibration the valu of DQA5 is undefined. The remaining DQA and DQB wires are not used during these

calibration packets. The last COLX packet also contains a SAM command (concatenated with the CAL command).

The RDRAM device samples the last calibration packet and adjusts its I

current value.

Unlike REF commands, CAL and SAM commands cannot be broadcast. This is because the calibration packets

from different devices would interfere. Therefore, a current control transaction must be sent every t

CCTRL

/N, where N

is the number of RDRAM devices on the Channel. The device field Da of the address a0 in the CAL/SAM command

should be incremented after each transaction.

Figure 25-2 shows an example of a temperature calibration sequence to the RDRAM device. This sequence is

broadcast once every t

TEMP

interval to all the RDRAM devices on the Channel. The TCEN and TCAL are ROP

commands, and cause the slew rate of the output drivers to adjust for temperature drift. During the quiet interval

TCQUIET

the devices being calibrated can't be read, but they can be written.

Figure 25-1 Current Control CAL/SAM Transaction Example

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

Transaction a0: CAL/SAM

a0 = {Da, Bx}

CCTRL

Transaction a1: RD

a1 = {Da, Bx}

CAL a0

CAL a2

Q (a0)

CAC

CAL a0

CAL/SAM a0

Read data from a different
device from an earlier RD
command can be anywhere
prior to the Q(a0) packet.

Read data from a different
device from a later RD
command can be anywhere
after to the Q(a0) packet.

Read data from the same
device from a later RD
command must be at this
packet position or later.

Read data from the same
device from an earlier RD
command must be at this
packet position or earier.

Transaction a2: CAL/SAM

a2 = {Da, Bx}

DQA5 of the first calibrate packet has the inverted TSQ bit of INIT
control register; i.e. logic 0 or high voltage means hot temperature.

When used for monitoring, it should be enabled with the DQA3

bit (current control one value) in case there is no RDRAM present:

HotTemp = /DQA5

DQA3

Note that DQB3 could be used instead of DQA3.

READTOCC

Q (a1)

CCSAMTOREAD

Figure 25-2 Temperature Calibration (TCEN-TCAL) Transactions to RDRAM

CTM/CFM

DQA8..0

DQB8..0

COL4

..COL0

ROW2

..ROW0

CA L

TCEN

TCAL

TCEN

TCAL

Any ROW packet may be
placed in the gap between the
ROW packets with the
TCEN and TCAL commands.

No read data from devices

being calibrated

TEMP

TCEN

TCQUIET

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

26. Electrical Conditions

Electrical Conditions

Symbol

Parameter and Conditions

MIN.

MAX.

Unit

Junction temperature under bias

-- 100

DD,

DDa

Supply

voltage

2.50

0.13 2.50

0.13 V

DDa

Supply voltage droop (DC) during NAP interval

NLIMT

)

-- 2.0

DDa

Supply voltage ripple (AC) during NAP interval

NLIMT

)

2.0 +2.0

CMOS

Note1

Supply voltage for CMOS pins (2.5V controllers)

2.50

0.13 2.50

0.25 V

Supply voltage for CMOS pins (1.8V controllers)

1.80

0.1 1.80

0.2 V

TERM

Termination

voltage

1.80

0.1

1.80 + 0.1

REF

Reference

voltage

1.40

0.2 1.40

0.2 V

DIL

RSL data input - low voltage

CYCLE

=2.50ns V

REF

0.5 V

REF

0.2 V

CYCLE

=1.875ns V

REF

0.5 V

REF

0.15 V

DIH

RSL data input - high voltage

Note2

CYCLE

=2.50ns V

REF

0.2 V

REF

0.5 V

CYCLE

=1.875ns V

REF

0.15 V

REF

0.5 V

RSL input data asymmetry:

= (V

DIH

REF

) / (V

REF

DIL

)

0.67

1.00

RSL clock input - common mode

= (V

CIH

+ V

CIL

) / 2

1.3

1.8

CIS, CTM

RSL clock input swing :

CIS

= V

CIH

CIL

(CTM, CTMN pins).

0.35

1.00

CIS, CFM

RSL clock input swing :

CIS

= V

CIH

CIL

(CFM, CFMN pins).

0.225

1.00

IL, CMOS

CMOS input low voltage

0.3

Note3

CMOS

/ 2

0.25)

IH, CMOS

CMOS input high voltage

CMOS

/ 2+0.25

CMOS

0.3

Note4

Notes 1. V

CMOS

must remain on as long as V

is applied and cannot be turned off.

2. V

DIH

is typically equal to V

TERM

(1.8V

0.1V) under DC conditions in a system.

3. Voltage undershoot is limited to

0.7V for a duration of less than 5ns.

4. Voltage overshoot is limited to VCMOS + 0.7V for a duration of less than 5ns.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

27. Timing Conditions

Timing Conditions

Symbol Parameter

MIN.

MAX. Unit Figures

CYCLE

CTM and CFM cycle times

PC800 2.50

3.33

Figure 30-1

PC1066

1.875 2.5

, t

CTM and CFM input rise and fall times

0.2

0.5

Figure 30-1

, t

CTM and CFM high and low times

40%

60%

CYCLE

Figure 30-1

CTM-CFM

differential

(MSE/MS=0/0) 0.0

1.0

Figure 22-1

(MSE/MS=1/1)

0.9 1.0

CYCLE

Figure 30-1

(MSE/MS=1/0)

0.1 +0.1

Figure 30-1

DCW

Domain crossing window

0.1 +0.1

CYCLE

Figure 35-1

, t

DQA/DQB/ROW/COL input rise/fall

CYCLE

=2.50ns 0.2 0.65

Figure 31-1

times

CYCLE

=1.875ns 0.2

0.45

, t

DQA/DQB/ROW/COL-to-CFM t

CYCLE

=2.50ns 0.200

Note1,2

-- ns

Figure 31-1

setup/hold

time

CYCLE

=1.875ns 0.160

Note2

-- ns

DR1

, t

DF1

SIO0, SIO1 input rise and fall times

-- 5.0

Figure 33-1

DR2,

DF2

CMD,SCK input rise and fall times

-- 2.0

Figure 33-1

CYCLE1

SCK cycle time - Serial control register transactions

1,000

-- ns

Figure 33-1

SCK cycle time - Power transitions

CYCLE

=2.50ns 10 -- ns

Figure 33-1

CYCLE

=1.875ns 7.5

-- ns

CH1

, t

CL1

SCK high and low times

CYCLE

=2.50ns 4.25 -- ns

Figure 33-1

CYCLE

=1.875ns 3.5

-- ns

CMD setup time to SCK rising or falling t

CYCLE

=2.50ns 1.25 -- ns

Figure 33-1

edge

Note3

CYCLE

=1.875ns 1.0

-- ns

CMD hold time to SCK rising or falling t

CYCLE

=2.50ns 1.0 -- ns

Figure 33-1

edge

Note3

CYCLE

=1.875ns 1.0

-- ns

SIO0

setup time to SCK falling edge

-- ns

Figure 33-1

SIO0

hold time to SCK falling edge

-- ns

Figure 33-1

PDEV setup time on DQA5..0 to SCK rising edge

-- ns

Figure 23-4, 33-2

PDEV hold time on DQA5..0 to SCK rising edge

5.5

-- ns

Figure 23-4, 33-2

ROW2..0, COL4..0 setup time for quiet window

CYCLE

Figure 23-4

ROW2..0, COL4..0 hold time for quiet window

Note4

CYCLE

Figure 23-4

NPQ

Quiet on ROW / COL bits during NAP / PDN entry

CYCLE

Figure 23-3

READTOCC

Offset between read data and CC packets (same device)

CYCLE

Figure 25-1

CCSAMTOREAD

Offset between CC packet and read data (same device)

CYCLE

Figure 25-1

CTM/CFM stable before NAP/PDN exit

CYCLE

Figure 23-4

CTM/CFM stable after NAP/PDN entry

100

CYCLE

Figure 23-3

FRM

ROW packet to COL packet ATTN framing delay

CYCLE

Figure 23-2

NLIMIT

Maximum time in NAP mode

-- 10

µs

Figure 23-1

REF

Refresh

interval

-- 32

Figure 24-1

CCTRL

Current control interval

34 t

CYCLE

100

Figure 25-1

TEMP

Temperature control interval

-- 100

Figure 25-2

TCEN

TCE command to TCAL command

150

CYCLE

Figure 25-2

TCAL

TCAL command to quiet window

CYCLE

Figure 25-2

TCQUIET

Quiet window (no read data)

140

CYCLE

Figure 25-2

PAUSE

RDRAM delay (no RSL operations allowed)

-- 200

µs

Figure 22-1

BURST

Interval after PDN or NAP (with self-refresh) exit in which

all banks of the RDRAM must be refreshed at least once.

-- 200

µs

Figure 24-2

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

28. Electrical Characteristics

Electrical Characteristics

Symbol

Parameter and Conditions

MIN.

MAX.

Unit

Junction-to-Case thermal resistance

-- 0.5

C/Watt

REF

current

REF,MAX

10 +10 µA

RSL output high current

OUT

)

10 +10 µA

ALL

RSL

current

=0.9 V, V

DD,MIN

, T

j,MAX

Note1

CYCLE

=2.50ns 30.0

CYCLE

=1.875ns 32.0

RSL

current resolution step

-- 2.0 mA

OUT

Dynamic output impedance

150

OL, NOM

RSL

current

=1.0 V

Note2, 3

CYCLE

=2.50ns 26.6

30.6

CYCLE

=1.875ns 27.1

30.1

I,CMOS

CMOS input leakage current

I,CMOS

CMOS

)

10.0 +10.0 µA

OL,CMOS

CMOS output low voltage

OL,CMOS

= 1.0 mA

-- 0.3 V

OH,CMOS

CMOS output high voltage

OH,CMOS

0.25 mA

CMOS

0.3

-- V

Note 1. This measurement is made in manual current control mode with all output device legs sinking current.

2. This measurement is made in automatic current control mode after at least 64 current control calibration
operations to a device and after CCA and CCB are initialized to a value of 64. This value applies to all DQA
and DQB pins.

3. This measurement is made in automatic current control mode with the ASYMA and ASYMB register fields
set to 0.

29. Timing Characteristics

Timing Characteristics

Symbol Parameter

MIN. MAX. Unit Figure(s)

CTM-to-DQA/DQB output time

CYCLE

= 2.50 ns

0.260

Note1,2

+0.260

Note1,2

Figure 32-1

CYCLE

= 1.875 ns

0.195

Note2

+0.195

Note2

, t

DQA/DQB output rise and fall times

CYCLE

= 2.50 ns

0.2

0.45

Figure 32-1

CYCLE

= 1.875 ns

0.2

0.32

SCK-to-SIO0

delay

LOAD,MAX

= 20 pF (SD read packet)

-- 10

Figure 34-1

SCK(pos)-to-SIO0 delay @ C

LOAD,MAX

= 20pF (SD read data hold)

-- ns

Figure 34-1

QR1

, t

QF1

SIO

OUT

rise/fall

LOAD,MAX

20 pF

-- 12

Figure 34-1

PROP1

SIO0-to-SIO1 or SIO1-to-SIO0

delay

LOAD,MAX

20 pF

-- 20

Figure 34-1

NAPXA

NAP exit delay - phase A

-- 50

Figure 23-4

NAPXB

NAP exit delay - phase B

-- 40

Figure 23-4

PDNXA

PDN exit delay - phase A

-- 4

Figure 23-4

PDNXB

PDN exit delay - phase B

-- 9,000

CYCLE

Figure 23-4

ATTN-to-STBY power state delay

-- 1

CYCLE

Figure 23-2

STBY-to-ATTN power state delay

-- 0

CYCLE

Figure 23-2

ASN

ATTN/STBY-to-NAP power state delay

-- 8

CYCLE

Figure 23-3

ASP

ATTN/STBY-to-PDN power state delay

-- 8

CYCLE

Figure 23-3

Notes 1

. This parameter also applies to a PC1066 part when operated with t

CYCLE

=2.50 ns.

Q,MIN

and t

Q,MAX

for other t

CYCLE

values can be interpolated between or extrapolated from the timings at the

2 specified t

CYCLE

values.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

30. RSL Clocking

Figure 30-1 is a timing diagram which shows the detailed requirements for the RSL clock signals on the Channel.

The CTM and CTMN are differential clock inputs used for transmitting information on the DQA and DQB, outputs.

Most timing is measured relative to the points where they cross. The t

CYCLE

parameter is measured from the falling

CTM edge to the falling CTM edge. The t

and t

parameters are measured from falling to rising and rising to falling

edges of CTM. The t

and t

rise-and fall-time parameters are measured at the 20 % and 80 % points.

The CFM and CFMN are differential clock outputs used for receiving information on the DQA, DQB, ROW and COL

outputs. Most timing is measured relative to the points where they cross. The t

CYCLE

parameter is measured from the

falling CFM edge to the falling CFM edge. The t

and t

parameters are measured from falling to rising and rising to

falling edges of CFM. The t

and t

rise- and fall-time parameters are measured at the 20 % and 80 % points. The

parameters specifies the phase difference that may be tolerated with respect to the CTM and CFM differential

clock inputs (the CTM pair is always earlier).

Figure 30-1 RSL Timing - Clock Signals

CIH

80%

50%

20%

CIL

CTM

CTMN

CYCLE

CIH

80%

50%

20%

CIL

CFM

CFMN

CYCLE

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

32. RSL - Transmit Timing

Figure 32-1 is a timing diagram which shows the detailed requirements for the RSL output signals on the Channel.

The DQA and DQB signals are outputs to transmit information that is received by a Direct RAC on the Channel.

Each signal is driven twice per t

CYCLE

interval. The beginning and end of the even transmit window is at the 75 %

point of the previous cycle and at the 25 % point of the current cycle. The beginning and end of the odd transmit

window is at the 25 % point and at the 75 % point of the current cycle. These transmit points are measured relative to

the crossing points of the falling CTM clock edge. The size of the actual transmit window is less than the ideal

CYCLE

/2, as indicated by the non-zero valued of t

Q,MIN

and t

Q,MAX

. The t

parameters are measured at the 50 % voltage

point of the output transition.

The t

and t

rise- and fall-time parameters are measured at the 20 % and 80 % points of the output transition.

Figure 32-1 RSL Timing - Data Signals for Transmit

CIH

80%

50%

20%

CIL

CTM

CTMN

even

Q,MIN

odd

CYCLE

80%

20%

DQA

DQB

Q,MAX

Q,MIN

Q,MAX

0.25·t

50%

CYCLE

0.75·t

CYCLE

0.75·t

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

33. CMOS - Receive Timing

Figure 33-1 is a timing diagram which shows the detailed requirements for the CMOS input signals.

The CMD and SIO0 signals are inputs which receive information transmitted by a controller (or by another RDRAM

DEVICE'Ss SIO1 output). SCK is the CMOS clock signal driven by the controller. All signals are high true.

The cycle time, high phase time, and low phase time of the SCK clock are t

CYCLE1

, t

CH1

and t

CL1

, all measured at the

50 % level. The rise and fall times of SCK, CMD, and SIO0 are t

DR1

and t

DF1

, measured at the 20 % and 80 % levels.

The CMD signal is sampled twice per t

CYCLE1

interval, on the rising edge (odd data) and the falling edge (even data).

The set/hold window of the sample points is t

. The SCK and CMD timing points are measured at the 50 % level.

The SIO0 signal is sampled once per t

CYCLE1

interval on the falling edge. The set/hold window of the sample points

is t

. The SCK and SIO0 timing points are measured at the 50 % level.

Figure 33-1 CMOS Timing - Data Signals for Receive

IH,CMOS

80%

50%

20%

IL,CMOS

SCK

even

odd

IH,CMOS

80%

20%

IL,CMOS

CMD

DR2

DF2

50%

DR2

DF2

CYCLE1

CH1

CL1

IH,CMOS

80%

20%

IL,CMOS

SIO0

DR1

DF1

50%

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

35. RSL - Domain Crossing Window

When read data is returned by the RDRAM device, information must cross from the receive clock domain (CFM) to

the transmit clock domain (CTM). The t

parameter permits the CFM to CTM phase to vary though an entire cycle ;

i.e. there is no restriction on the alignment of these two clocks. A second parameter t

DCW

is needed in order to

describe how the delay between a RD command packet and read data packet varies as a function of the t

value.

Figure 35-1 shows this timing for five distinct values of t

. Case A (t

=0) is what has been used throughout this

document. The delay between the RD command and read data is t

CAC

. As t

varies from zero to t

CYCLE

(cases A

through E), the command to data delay is (t

CAC

-t

). When the t

value is in the range 0 to t

DCW,MAX

, the command to

data delay can also be (t

CAC

-t

CYCLE

). This is shown as cases A' and B' (the gray packets). Similarly, when the t

value is in the range (t

CYCLE

DCW,MIN

) to t

CYCLE

, the command to data delay can also be (t

CAC

-t

CYCLE

). This is shown

as cases D' and E' (the gray packets). The RDRAM device will work reliably with either the white or gray packet

timing. The delay value is selected at initialization, and remains fixed thereafter.

Figure 35-1 RSL Timing - Crossing Read Domains

CFM

RDa1

···

CYCLE

Q(a1)

CAC TR

-t

CAC TR CYCLE

-t

COL

CTM

DQA/B

CTM

DQA/B

CTM

DQA/B

CTM

DQA/B

CTM

DQA/B

···

Case A t

Case A' t =0

Case B t =t

DCW,MAX

Case B' t =t

DCW,MAX

Case C t =0.5

CYCLE

Case D
t =t + t

CYCLE

DCW,MIN

Case D'
t =t + t

CYCLE

DCW,MIN

Case E t =t

CYCLE

Case E' t =t

CYCLE

CAC TR

-t

CAC TR CYCLE

-t

CAC TR

-t

CAC TR CYCLE

-t -t

CAC TR

-t

CAC TR

-t

CAC

CYCLE

-t +t

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

36. Timing Parameters

Timing Parameters Summary

Para- Description

MIN.

MAX. Units Figures

meter

PC1066

PC800

-AEP

(-32P)

-AE

(-32)

-AD

(-35)

-8C

(-40)

Row Cycle time of RDRAM banks - the interval between
ROWA packets with ACT commands to the same bank.

28 28 32 28 --

CYCLE

Figure13-1

Figure14-1

RAS

RAS-asserted time of RDRAM bank - the interval between
ROWA packet with ACT command and next ROWR packet with
PRER

Note 1

command to the same bank.

22 20

Note 2

CYCLE

Figure13-1

Figure14-1

Row Precharge time of RDRAM banks - the interval between
ROWR packet with PRER

Note 1

command and next ROWA packet

with ACT command to the same bank.

8 8 10 8 --

CYCLE

Figure13-1

Figure14-1

Precharge-to-precharge time of RDRAM device - the interval
between successive ROWR packets with PRER

Note 1

commands to any banks of the same device.

8 8 8 8 --

CYCLE

Figure10-3

RAS-to-RAS time of RDRAM device - the interval between
successive ROWA packets with ACT commands to any
banks of the same device.

8 8 8 8 --

CYCLE

Figure12-1

RCD

RAS-to-CAS Delay - the interval from ROWA packet with
ACT command to COLC packet with RD or WR command.
Note - the RAS-to-CAS delay seen by the RDRAM core (t

RCD-

) is equal to t

RCD-C

RCD

because of differences in the row

and column paths through the RDRAM interface.

9 9 9 7 --

CYCLE

Figure13-1

Figure14-1

CAC

CAS Access delay - the interval from RD command to Q read
data. The equation for t

CAC

is given in the TPARM register in

Figure 22-1(5/7).

8 9 9 8 12

CYCLE

Figure4-1

CWD

CAS Write Delay - interval from WR command to D write
data.

6 6 6 6 6

CYCLE

Figure4-1

CAS-to-CAS time of RDRAM bank - the interval between
successive COLC commands.

4 4 4 4 --

CYCLE

Figure13-1

Figure14-1

PACKET

Length of ROWA, ROWR, COLC, COLM or COLX packet.

CYCLE

Figure2-1

RTR

Interval from COLC packet with WR command to COLC
packet which causes retire, and to COLM packet with
bytemask.

8 8 8 8 --

CYCLE

Figure15-1

OFFP

The interval (offset) from COLC packet with RDA command,

or from COLC packet with retire command (after WRA
automatic precharge), or from COLC packet with PREC
command, or from COLX packet with PREX command to the
equivalent ROWR packet with PRER. The equation for t

OFFP

is given in the TPARM register in Figure 22-1(5/7).

4 4 4 4 4

CYCLE

Figure14-2

RDP

Interval from last COLC packet with RD command to ROWR
packet with PRER.

4 4 4 4 --

CYCLE

Figure13-1

RTP

Interval from last COLC packet with automatic retire
command to ROWR packet with PRER.

4 4 4 4 --

CYCLE

Figure14-1

Notes 1. Or equivalent PREC or PREX command. See Figure 12-2.

2. This is a constraint imposed by the core, and is therefore in units of ms rather than t

CYCLE

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

37. Absolute Maximum Ratings

Absolute Maximum Ratings

Symbol

Parameter MIN.

MAX.

Unit

I,ABS

Voltage applied to any RSL or CMOS pin with respect to GND

0.3 V

+0.3

DD,ABS

DDa,ABS

Voltage on V

and V

DDa

with respect to GND

0.5 V

+1.0

STORE

Storage temperature

50 +100

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

38. I

- Supply Current Profile

value

RDRAM Power Stated Steady-State

Transaction Rates

Note 1

@ t

CYCLE

MIN.

MAX.

Unit

DD,PDN

Device in PDN. self-refresh enabled and

INIT.LSR=0

2.50 ns/1.875 ns

6.0 mA

DD,NAP

Device in Nap.

2.50 ns/1.875 ns

4.0 mA

2.50 ns

70 mA

DD,STBY

Device in STBY. This is the average for a

device in STBY with (1) no packets on the

channel, and (2) with packets sent to other

devices.

1.875 ns

2.50 ns

100

DD,ATTN

Device in ATTN. This is the average for a

device in ATTN with (1) no packets on the

channel, and (2) with packets sent to other

devices.

1.875 ns

130

DD,ATTN-W

2.50 ns

530 mA

Device in ATTN. ACT command every 8

CYCLE

PRE command every 8

CYCLE

WR command

every 4

CYCLE

and data is 1100..1100.

1.875 ns

680

DD,ATTN-R

2.50 ns

520 mA

Device in ATTN. ACT command every 8

CYCLE

PRE command

every 8

CYCLE

RD command

every 4

CYCLE

and data is 1111..1111

Note 2

1.875 ns

660

Notes 1. The CMOS interface consumes power in all power states.

2. This does not include the I

sink current. The RDRAM device dissipates I

in each output driver when

a logic one is driven.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

39. Capacitance and Inductance

Figure 39-1 shows the equivalent load circuit of the RSL and CMOS pins. The circuit models the load that the

device presents to the Channel.

This circuit does not include pin coupling effects that are often present in the packaged device. Because coupling

effects make the effective single-pin inductance L

, and capacitance C

, a function of neighboring pins, these

parameters are intrinsically data-dependent. For purposes of specifying the device electrical loading on the Channel,

the effective L

and C

are defined as the worst-case values over all specified operating conditions.

is defined as the effective pin inductance based on the device pin assignment. Because the pad assignment

places each RSL signal adjacent to an AC ground (a GND or V

pin), the effective inductance must be defined

based on this configuration. Therefore, L

assumes a loop with the RSL pin adjacent to an AC ground.

is defined as the effective pin capacitance based on the device pin assignment. It is the sum of the effective

package pin capacitance and the IO pad capacitance.

Figure 39-1 Equivalent Load Circuit for RSL Pins

Pad

CTM,CTMN,
CFM,CFMN Pin

I,CMOS

Pad

I,CMOS

I,CMOS,SIO

Pad

DQA,DQB,RQ Pin

GND Pin

SCK,CMD Pin

GND Pin

SIO0,SIO1 Pin

GND Pin

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

RSL Pin Parasitics

Symbol

Parameter and Conditions - RSL pins

MIN.

MAX.

Unit

RSL effective input inductance

1066 MHz

3.5 pF

800

MHz

4.0

Mutual inductance between any DQA or DQB RSL signals.

0.2 nH

Mutual inductance between any ROW or COL RSL signals.

0.6 nH

Difference in L

value between any RSL pins of a single device.

1.8 nH

RSL effective input capacitance

Note

1066 MHz

2.0

2.3

800

MHz

2.0

2.4

Mutual capacitance between any RSL signals.

0.1 pF

Difference in C

value between any RSL pins of a single device.

0.06 pF

RSL effective input resistance

1066 MHz

800

MHz

Note This value is a combination of the device IO circuitry and package capacitances measured at VDD = 2.5 V and

f = 400 MHz with pin based at 1.4 V.

CMOS Pin Parasitics

Symbol

Parameter and Conditions - CMOS pins

MIN.

MAX.

Unit

I,CMOS

CMOS effective input inductance

8.0 nH

I,CMOS

CMOS effective input capacitance (SCK,CMD)

Note

1.7 2.1 pF

I,CMOS,SIO

CMOS effective input capacitance (SIO1,SIO0)

Note

7.0 pF

Note This value is a combination of the device IO circuitry and package capacitances.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

40. Interleaved Device Mode

Interleaved Device Mode permits a group of eight RDRAM devices on the Channel to collectively respond to
acommand. The purpose of this collective response is to limit the number of bits in each dualoct data packet which
are read from or written to a single RDRAM device device. This capability permits a memory controller to implement
hardware for fault detection and correction that can tolerate the complete internal failure of one RDRAM device on a
Channel.
The IDM bit of the INIT control register enables this fault tolerant operating mode. When it is set, the RDRAM device
will interpret the DR4..0 and DC4..0 fields of the ROW and COLC packets differently. Figure 40-1 shows the
differences using an example system with eight RDRAM devices.
The DEVID4..0 registers of these RDRAM devices are initial-ized to "00000" through "00111'. However, when the
IDM bit is set, only the upper two bits (DEVID4..3) will be compared to the DR4..3 and DC4..3 fields. This means that
ROW and COLC packets will be executed by groups of eight RDRAM devices, with a Channel containing from one to
four of these groups. The low-order DR2..0 bits are not used when IDM is set, and the low-order DC2..0 bits have a
modified function described below.
With IDM set, a directed ACT or PRE command in a ROW packet causes eight RDRAM devices to perform the
indicated operation. Likewise, when a RD or WR command is specified in a COLC command, the selected group of
eight RDRAM devices responds. When using IDM, devices must be added to the Channel in groups of eight. An
application will typically make the IDM bit setting the same for all RDRAM devices on a Channel.
The mechanism for indicating a broadcast ROW packet (DR4F and DR4T are both set to one) is not affected by the
setting of the IDM bit; i.e. IDM mode does not change the broadcast ROW packet mechanism.
Likewise, the COLX fields (DX4..0, XOP4..0, and BX5..0) are not changed by IDM mode - all COLX packets are
directed to a single device.
When the IDM bit is set, COLM packets should not be used (the M bit should be set to zero, selecting only COLX
packets). This is because the mapping of bytes to RDRAM device storage cells is changed by IDM mode.
Returning to Figure 40-1, the remaining fields of the ROW and COLC packets are interpreted in the same way
regardless of the setting of the IDM bit IDM mode does not affect these fields. Specifically, the BR5..0 and BC5..0
fields of the ROW and COLC packets are used to select one of the banks just as when IDM is not set. The R8..0 field
of the ROW packet selects a row of the selected (BR5..0) bank to load into the bank's sense amp. And the C6..0 field
selects one dualoct of the selected (BC5..0) bank's sense amp.
The IDM bit affects what is done with this selected dualoct. When IDM is not set, the dualoct is driven onto the
Channel by the single selected RDRAM device. When IDM is set, each RDRAM device of the eight device group
selected by DC4..3 drives 16 or 24 bits (x18 device) of the 144-bit dualoct. The bits driven are a function of the
DEVID2..0 RDRAM register field, the DC2..0 COLC packet field, and the device width (x18). Figure 40-1 shows the
mapping that is appropriate for DC2..0=000.
Figure 40-2 and Figure 40-3 show the mapping for all eight values of DC2..0. There are eight mappings, which are
rotated among the eight devices using the following equation:

Pin = 7 - 4

(DEVID2^DC2)

- 2

(DEVID1^DC1) - 1

(DEVID0^DC0) (Eq 1)

where "^" is the exclusive-or function. "Pin" is the pin number that is driven by the RDRAM device with the
DEVID2..0 value. For example, Pin=0 means the RDRAM drives DQA0 and DQB0, and so forth. The DQA8 pin is
always driven with DQA7, and DQB8 is always driven with DQB6 for x18 devices. For x16 devices, the DQA8 and
DQB8 pins are not used. For each of the eight mappings, the eight-RDRAM group supplies a complete dualoct. As
the application steps through eight values of DC2..0, all the bits of the eight underlying dualocts will be accessed.
Thus, an eight-RDRAM group appears to be a single RDRAM device with eight times the normal page size, with the
DC2..0 field providing the extra column addressing informa-tion (beyond what C6..0 provides).

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

41. Glossary of Terms

ACT

Activate command from AV field.

Write data packet on DQ pins.

activate

To access a roe and place in sense amp.

DBL

CNFGB register field doubled-bank.

activate

To access a row and place in sense amp.

Device address field in COLC packet.

adjacent

device

An RDRAM on a Channel.

Two RDRAM banks which share sense amps

(also called doubled banks).

DEVID

ASYM

CCA register field for RSL V

/ V

Control register with device address that is

matched against DR, DC, and DX fields.

ATTN Power

state

ready for ROW / COL packets. DM

Device match for ROW packet decode.

ATTNR Power

state

transmitting Q packets.

Doubled-bank

RDRAM with shared sense amp.

ATTNW Power

state

receiving D packets.

DQA and DQB pins.

Opcode field in ROW packets.

DQA

Pins for data byte A.

bank

DQB

Pins for data byte B.

A block of 2

RBIT

CBIT

storage cells in the core

of the RDRAM.

DQS

NAPX register field PDN/NAP exit.

Bank address field in CLC packet.

DR,DR4T,DR4F

BBIT

CNFGA register field - # bank address bits.

Device address field and packet framing fields

in ROW and ROWE packets.

broadcast

An operation executed by all RDRAM devices. dualoct

16 bytes the smallest addressable datum.

Bank address field in ROW packets.

Device address field in COLX packet.

bubble

field

A collection of bits in a packet.

Idle cycle(s) on RDRAM pins needed because

of a resource constraint.

INIT

Control register with initialization fields.

BYT

CNFGB register field 9 bits per byte.

initialization

Bank address field in COLX packet.

Configuring a Channel of RDRAM devices so

they are ready to respond to transactions.

Column address field in COLC packet.

LSR

CNFGA register field low-power self-refresh.

CAL Calibrate

) command in XOP field.

Mask opcode field (COLM/COLX packet).

CBIT

CNFGB register field - # column address bits. MA

Field in COLM packet for masking byte A.

CCA Control

current control A.

Field in COLM packet for masking byte B.

CCB Control

current control B.

MSK

Mask command in M field.

CFM,CFMN

Clock pins for receiving packets.

MVER

Control register manufacturer ID.

Channel

ROW / COL / DQ pins and external wires.

NAP

Power state needs SCK/CMD wakeup.

CLRR

Clear reset command from SOP field.

NAPR

Nap command in ROP field.

CMD

CMOS pins for initialization / power control.

NAPRC

Conditional nap command in ROP field.

CNFGA

Control register with configuration fields.

NAPXA

NAPX register field NAP exit delay A.

CNFGB

Control register with configuration fields.

NAPXB

NAPX register field NAP exit delay B.

COL

Pins for column-access control.

NOCOP

No-operation command in COP field.

COLC

Column operation packet on COL pins.

NOROP

No-operation command in ROP field.

COLM

Write mask packet on COL pins.

NOXOP

No-operation command in XOP field.

column

NSR

INIT register field NAP self-refresh.

Rows in a bank or activated in sense amps

have 2

CBTI

dualocts column storage.

packet

A collection of bits carried on the Channel.

Command

A decoded bit-combination from a field.

PDN

Power state needs SCK/CMD wakeup.

COLX

Extended operation packet on COL pins.

PDNR

Powerdown command in ROP field.

controller

PDNXA

Control

PDN exit delay A.

A logic-device which drives the ROW / COL

/ DQ wires for a Channel of RDRAM devices. PDNXB

Control

PDN exit delay B.

COP

Column opcode field in COLC packet.

pin efficiency

The fraction of non-idle cycles on a pin.

core

The banks and sense amps of an RDRAM.

PRE

PREC, PRER, PREX precharge commands.

CTM, CTMN

Clock pins for transmitting packets.

PREC

Precharge command in COP field.

Current control

precharge

Prepares sense amp and bank for activate.

Periodic operations to update the proper I

Value of RSL output drivers.

PRER

Precharge command in ROP field.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

PREX

Precharge command in XOP field.

SETF

Set fast clock command from SOP field.

PSX

INIT register field PDN/NAP exit.

SETR

Set reset command from SOP field.

PSR

INIT register field PDN self-refresh.

SINT

PVER

CNFGB register field protocol version.

Serial interval packet for control register

read/write transactions.

Read data packet on DQ pins.

SIO0,SIO1

CMOS serial pins for control registers.

Row address field of ROWA packet.

SOP

Serial opcode field in SRQ.

RBIT

CNFGB register field - #row address bits.

SRD

Serial read opcode command from SOP.

RD/RDA

Read (/precharge) command in COP field.

SRP

INIT register field Serial repeat bit.

read

Operation of accessing sense amp data.

SRQ

receive

Serial request packet for control register

read/write transactions.

Moving information from the Channel into the

RDRAM (a serial stream is demuxed).

STBY

Power

state

ready for ROW packets.

REFA

Refresh-activate command in ROP field.

SVER

Control register stepping version.

REFB Control

next bank (self-refresh).

SWR

Serial write opcode command from SOP.

REFBIT

TCAS

TCLSCAS register field t

CAS

core delay.

CNFGA register field ignore bank bits (for

REFA and self-refresh).

TCLS

TCLSCAS register field t

CLS

core delay.

REFP

Refresh-precharge command in ROP field.

TCLSCAS

Control register t

CAS

and t

CLS

delay.

REFR Control

next row for REFA.

TCYCLE

Control register t

CYCLE

delay.

refresh

Periodic operations to restore storage cells. TDAT

Control register t

DAC

delay.

retire

TEST77

Control

for test purposes.

The automatic operation that stores write

buffer into sense amp after WR command.

TEST78

Control

for test purposes.

RLX

RLXC, RLXR, RLXX relax commands.

TRDLY

Control register t

RDLY

delay.

RLXC

Relax command in COP field.

transaction

ROW, COL, DQ packets for memory access.

RLXR

Relax command in ROP field.

transmit

RLXX

Relax command in XOP field.

Moving information from the RDRAM onto

the Channel (parallel word is muxed).

ROP

Row-opcode field in ROWR packet.

WR/WRA

Write (/precharge) command in COP field.

row 2

CBIT

dualocts of cells (bank/sense amp).

write

Operation of modifying sense amp data.

ROW

Pins for row-access control

XOP

Extended opcode field in COLX packet.

ROW

ROWA or ROWR packets on ROW pins.

ROWA

Activate packet on ROW pins.

ROWR

Row operation packet on ROW pins.

Alternate name for ROW/COL pins.

RSL

Rambus Signal levels.

SAM Sample

) command in XOP field.

Serial address packet for control register

transactions w/ SA address field.

SBC

Serial broadcast field in SRQ.

SCK

CMOS clock pin.

Serial data packet for control register

transactions w/ SD data field.

SDEV

Serial device address in SRQ packet.

SDEVID

INIT register field Serial device ID.

self-refresh

Refresh mode for PDN and NAP.

sense amp

Fast storage that holds copy of bank's row.

Preliminary Data Sheet

E0260E40 (Ver. 4.0)

EDR2518ABSE

NOTES FOR CMOS DEVICES

PRECAUTION AGAINST ESD FOR MOS DEVICES

Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.

HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES

No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to V

or GND with a resistor, if it is considered to have a possibility of being an output

pin. The unused pins must be handled in accordance with the related specifications.

STATUS BEFORE INITIALIZATION OF MOS DEVICES

Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.

CME0107

EDR2518ABSE

M01E0107

No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.

Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.

Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.

[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.

[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.

[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.

If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.

If these products/technology are sold, leased, or transferred to a third party, or a third party is granted

license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.

The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.

Rambus, RDRAM and the Rambus logo are registered trademarks of Rambus Inc.
Direct Rambus, Direct RDRAM, RIMM, SO-RIMM and QRSL are trademarks of Rambus Inc.

µ
µ
µ
µ

BGA is a registered trademark of Tessera, Inc.

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