EM6415
Copyright
2002, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Supply Voltage
Voltage at
remaining pins
Storage
temperature
Operating
temperature
Soldering
Temperature*Time
V
DD
V
PIN
T
store
T
op
TS
MAX
-0.3
V
SS
-0.3
-55
-40
5.5
V
DD
+0.3
150
+85
250
10
V
V
C
C
C
s
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Electrical Characteristics
Operating Conditions (unless othewise specified)
Positive supply
V
DD
=
3.0V
Negative supply
V
SS
=
0V
Ambient temperature
T =
25C
Sensor resistance
R
SEN
=
300
to 10K
Power Supply
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Operating Voltage Range
Current Consumption
V
DD
I
DD1
I
DD2
T = -20C to 70C
CE =V
DD
at standby
CE =V
SS
at A/D conversion
f
ADOSC
=800kHz
2.2
100
3.0
0.2
240
3.6
1.0
300
V
A
A
Programmable Internal Oscillator
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Frequency
Frequency Step Size
Stability Against Supply
Voltage Variations
Stability Against
Temperature Variations
f
ADOSC
f
ADOSC
f/fV
DD
f/T
D1,D0 = 00
2.2V< V
DD
<3.0V
-20C<T<70C
350
40
500
70
15
-300
800
120
kHz
kHz
kHz/V
Hz/C
EM6415
Copyright
2002, EM Microelectronic-Marin SA
4
www.emmicroelectronic.com
Sensor
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Sensor Drive Current
I
SDRV
R
RSEN1
=1.0k
, R
SEN
=4.0k
,
Program step 0
Mode S
276
300
324
A
R
RSEN1
=1.0k
, R
SEN
=4.0k
,
Program step 15
Mode S
468
510
552
A
Sensor Drive Current per
Step
I
SDRV
/stp
R
RSEN1
=1.0k
, R
SEN
=4.0k
10
15
20
A/stp
Sensor Drive Current
vs Voltage Deviation
I
SDRV
/V
R
RSEN1
=1.0k
, R
SEN
=4.0k
2.2V < VDD < 3.0V
50
200
300
ppm
Sensor Bridge
Resistance1
R
SEN1
R
RSEN1
=1.3k
, I
SDRV
=200
A
2.7
3.7
4.2
k
Sensor Bridge
Resistance2
R
SEN2
R
RSEN2
=510
, I
SDRV
=500
A
1.0
1.5
2.0
k
RSEN1 Resistance
R
RSEN1
0.3
2.5
k
RSEN2 Resistance
R
RSEN2
0.3
2.5
k
A/D Converter
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input Voltage Range FS
Resolution
Integral Nonlinearity
Differential Nonlinearity
Conversion Time
Offset Adjust Range
FS Fine Ajust Range
V
SENS
RESADC
INLADC
DNLADC
TCONVAD
V
OFFAD
V
FSFAD
CH1,2,3,4H-CH1,2,3,4L
To resolve 14 bits ADC
f
ADOSC
=800kHz
f
ADOSC
=800kHz
f
ADOSC
=800kHz
f
ADOSC
=500kHz, 14bit
12 bit FS fine adjust
16
14
-60
-12.5
4
3
110
40
200
+60
+12.5
mV
Bits
LSB
LSB
ms
mV
%FS
EM6415
Copyright
2002, EM Microelectronic-Marin SA
5
www.emmicroelectronic.com
DC Characteristics
Parameter
Symbol
Conditions
Min.
Typ.
Max
Unit
Input Low Voltage
Input High Voltage
Input Low Current
Input High Current
Output Low Voltage
Output High Voltage
V
IL
V
IH
I
IL
I
IH
V
OL
V
OH
ALE
, RD , WR , CE , CLKP,
CLKSEL, D0-D3
ALE
, RD , WR , CE , CLKP,
CLKSEL, D0-D3
ALE
, RD , WR , CE , CLKP,
CLKSEL, D0-D3
ALE
, RD , WR , CE , CLKP,
CLKSEL, D0 - D3
I
OL
= 2mA, D0 D3
I
OH
= -1mA, D0 D3
0.8
V
DD
-20
2.4
1
1
0.1
2.95
0.2
V
DD
20
0.4
V
V
nA
nA
V
V
Timing Characteristics
Data Write cycle
V
DD
= 3.0V, V
SS
= 0V, T = 25 C, V
OH
= 0.8
V
DD
, V
OL
= 0.2
V
DD
Item
Symbol
Min.
Typ.
Max.
Unit
Address Set-up Time
T
was
20
25
-
ns
Address Hold Time
T
wah
30
35
-
ns
Data Set-up Time
T
wds
20
25
-
ns
Data Hold Time
T
wdh
30
35
-
ns
ALE
Pulse Width
T
wap
60
65
-
ns
WR
Pulse Width
T
wwp
60
65
-
ns
t
wap
V
OH
V
OL
V
OH
V
OL
WR
D0-D3
t
was
t
wah
V
OH
V
OL
t
wdp
t
wds
t
wdh
V
OH
V
OL
Address
Data
ALE
Fig. 3
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