This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN29LV040
Rev. D, Issue Date: 2004/03/31
da0.
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
High performance
- Access times as fast as 45 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- Eight 64 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
High performance program/erase speed
- Byte/Word program time: 8s typical
- Sector erase time: 500ms typical
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle
bits feature
Single Sector and Chip Erase
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
triple-metal double-poly triple-well CMOS
Flash Technology
Low Vcc write inhibit < 2.5V
>100K program/erase endurance cycle
Package options
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
Commercial and industrial Temperature
Range
GENERAL DESCRIPTION
The EN29LV040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes. Any byte can be programmed typically in 8s. The EN29LV040
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the
need for WAIT states in high-performance microprocessor systems.
The EN29LV040 has separate Output Enable ( OE ), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29LV040
4 Megabit (512K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
3
EN29LV040
Rev. D, Issue Date: 2004/03/31
TABLE 2. UNIFORM BLOCK SECTOR ARCHITECTURE
Sector
ADDRESS RANGE
SECTOR SIZE
(KBytes)
A18 A17 A16
7 70000h
7FFFFh
64
1
1
1
6 60000h
6FFFFh
64
1
1
0
5 50000h
5FFFFh
64
1
0
1
4 40000h
4FFFFh
64
1
0
0
3 30000h
3FFFFh
64
0
1
1
2 20000h
2FFFFh
64
0
1
0
1 10000h
1FFFFh
64
0
0
1
0 00000h
0FFFFh
64
0
0
0
PRODUCT SELECTOR GUIDE
Product Number
EN29LV040
Regulated Voltage Range: Vcc=3.0-3.6 V
-45R -55R
Speed Option
Full Voltage Range: Vcc=2.7 3.6 V
-70
-90
Max Access Time, ns (t
acc
)
45 55 70 90
Max CE# Access, ns (t
ce
)
45 55 70 90
Max OE# Access, ns (t
oe
)
25 30 30 35
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
5
EN29LV040
Rev. D, Issue Date: 2004/03/31
TABLE 3. OPERATING MODES
4M FLASH USER MODE TABLE
Operation CE#
OE#
WE#
A0-A18 DQ0-DQ7
Read L
L
H
A
IN
D
OUT
Write L
H
L
A
IN
D
IN
CMOS Standby
V
cc
0.3V
X
X
X
High-Z
TTL Standby
H
X
X
X
High-Z
Output Disable
L
H
H
X
High-Z
Reset X
X
X
X High-Z
Temporary
Sector Unprotect
X
X
X
A
IN
D
IN
Notes:
L=logic low= V
IL
, H=Logic High= V
IH
, V
ID
=11
0.5V, X=Don't Care (either L or H, but not floating!),
D
IN
=Data In, D
OUT
=Data Out, A
IN
=Address In
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
4M FLASH MANUFACTURER/DEVICE ID TABLE
Note:
1. If a manufacturing ID is read with A8=L, the chip will output a configuration code 7Fh. A further Manufacturing ID must be
read with A8=H.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be
Vcc (CMOS logic level) for Command Autoselect Mode.
Description
CE#
OE#
WE#
A18
to
A16
A15
to
A10
A9
2
A8
A7
A6
A5
to
A2
A1
A0
DQ7 to DQ0
Manufacturer
ID: Eon
L L H X X
V
ID
H
1
X
L
X
L
L
1Ch
Device ID
L L H X X
V
ID
X
X
L
X
L
H
4Fh
01h
(Protected)
Sector
Protection
Verification
L L H SA X
V
ID
X
X
L
X
H
L
00h
(Unprotected)
PDF 
ZIP
