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Электронный компонент: EN29LV400A

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This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN29LV400A
Rev.C, Issue Date: 2006/02/21


FEATURES
3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for compatibility with
high performance 3.3 volt microprocessors.
High performance
- Access times as fast as 45 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16 K-byte, two 8 K-byte, one 32 K-byte,
and seven 64 K-byte sectors (byte mode)
- One 8 K-word, two 4 K-word, one 16 K-word
and seven 32 K-word sectors (word mode)
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors

- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
High performance program/erase speed
- Byte/Word program time: 8s typical
- Sector erase time: 500ms typical
JEDEC Standard Embedded Erase and
Program Algorithms
JEDEC standard DATA# polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
triple-metal double-poly triple-well CMOS
Flash Technology
Low Vcc write inhibit < 2.5V
minimum 100K program/erase endurance
cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
Commercial and Industrial Temperature
Range

GENERAL DESCRIPTION
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8s. The
EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain
a minimum of 100K program/erase cycles on each Sector.


EN29LV400A
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
2
EN29LV400A
Rev.C, Issue Date: 2006/02/21
CONNECTION DIAGRAMS




















A6
A5
A4
A1
A3
A2
FBGA
Top View, Balls Facing Down
A13
A9
A3
RY/BY#
WE#
A7
B6
B5
B4
B1
B3
B2
A12
A8
A4
NC
RESET#
A17
C6
C5
C4
C1
C3
C2
A14
A10
A2
NC
NC
A6
D6
D5
D4
D1
D3
D2
A15
A11
A1
NC
NC
A5
E6
E5
E4
E1
E3
E2
A16
DQ7
A0
DQ2
DQ5
DQ0
F6
F5
F4
F3
F2
BYTE#
DQ14
CE#
DQ10
DQ12
DQ8
G6
G5
G4
G3
G2
DQ15/A-1
DQ13
OE#
DQ11
Vcc
DQ9
H6
H5
H3
H2
Vss
DQ6
Vss
DQ4
DQ1
F1
G1
H4
H1
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Standard
TSOP
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
3
EN29LV400A
Rev.C, Issue Date: 2006/02/21



TABLE 1. PIN DESCRIPTION
FIGURE 1. LOGIC DIAGRAM

Pin Name
Function
A0-A17 Addresses
DQ0-DQ14
15 Data Inputs/Outputs
DQ15 / A-1
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
CE# Chip
Enable
OE# Output
Enable
RESET#
Hardware Reset Pin
RY/BY# Ready/Busy
Output
WE# Write
Enable
Vcc Supply
Voltage
Vss Ground
NC
Not Connected to anything
BYTE# Byte/Word
Mode




























EN29LV400A
DQ0 DQ15
(A-1)
A0 - A17
WE#
CE#
RY/BY#
Reset#
Byte#
OE#
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
4
EN29LV400A
Rev.C, Issue Date: 2006/02/21


TABLE 2A. TOP BOOT BLOCK SECTOR ARCHITECTURE
ADDRESS RANGE
Sector
(X16) (X8)
SECTOR
SIZE
(Kbytes /
Kwords)
A17
A16
A15
A14 A13 A12
10 3E000h-3FFFFh 7C000h-7FFFFh 16/8 1 1 1 1 1 X
9 3D000h-3DFFFh 7A000h-7BFFFh 8/4 1 1 1 1 0 1
8 3C000h-3CFFFh 78000h-79FFFh 8/4 1 1 1 1 0 0
7 38000h-3BFFFh
70000h
77FFFh
32/16 1 1 1 0 X X
6 30000h-37FFFh
60000h
-
6FFFFh
64/32 1 1 0 X X X
5 28000h-2FFFFh
50000h
5FFFFh
64/32 1 0 1 X X X
4 20000h-27FFFh
40000h
4FFFFh
64/32 1 0 0 X X X
3 18000h-1FFFFh
30000h
3FFFFh
64/32 0 1 1 X X X
2 10000h-17FFFh
20000h
-
2FFFFh
64/32 0 1 0 X X X
1 08000h-0FFFFh
10000h
-
1FFFFh
64/32 0 0 1 X X X
0 00000h-07FFFh
00000h
-
0FFFFh
64/32 0 0 0 X X X





















This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
5
EN29LV400A
Rev.C, Issue Date: 2006/02/21

TABLE 2B. BOTTOM BOOT BLOCK SECTOR ARCHITECTURE
ADDRESS RANGE
Sector
(X16) (X8)
SECTOR
SIZE
(Kbytes/
Kwords)
A17
A16
A15
A14 A13 A12
10 38000h-3FFFFh
70000h
7FFFFh 64/32 1 1 1 X X X
9 30000h-37FFFh
60000h
6FFFFh
64/32 1
1
0
X
X
X
8 28000h-2FFFFh
50000h
5FFFFh
64/32 1
0
1
X
X
X
7 20000h-27FFFh
40000h
4FFFFh
64/32 1
0
0
X
X
X
6 18000h-1FFFFh
30000h
3FFFFh
64/32 0
1
1
X
X
X
5 10000h-17FFFh
20000h
2FFFFh
64/32 0
1
0
X
X
X
4 08000h-0FFFFh
10000h
1FFFFh
64/32 0
0
1
X
X
X
3 04000h-07FFFh
08000h
0FFFFh
32/16 0
0
0
1
X
X
2
03000h-03FFFh
06000h 07FFFh
8/4
0
0
0
0
1
1
1
02000h-02FFFh
04000h 05FFFh
8/4
0
0
0
0
1
0
0
00000h-01FFFh
00000h 03FFFh
16/8
0
0
0
0
0
X