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Электронный компонент: ЭМТКП580-02

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EPL. Production of Power Semiconductor Devices.
124482, Moscow, Zelenograd, a/p 167 EPL Ltd. Tel./fax (495) 532-81-95, tel. 532-93-36.
http://www.epl.ru, E-mail:
epl@epl.ru
MOSFET
580-02
:
.
.
.
.
.
:
106,5
61,5
31
.
.
.
.



-
.
.
= 25
-
-
V
DSS

V
GS
=0B, I
D
=12mA, T
J
=25C
200
-
V
GSS

V
DS
=0B, I
DSS
100nA
20
-
V
DGR

R
GS
=10k , I
D
0,5mA
200
I
D
T
J
=25C
V
GS
=10B T
J
=80C
580
430
I
DM

T
= 10
s

P
D
1100
T
J
-40+150
C
(
)
T
JM
150
C
T
STG
-40+125
C
V
ISOL
50
, t= 1
.
I
ISOL
1mA t= 1
.
3000
3600
420
.

V
DSS
= 200 B
I
D
= 580 A
R
DS(on)
= 3,8 m

EPL. Production of Power Semiconductor Devices.
124482, Moscow, Zelenograd, a/p 167 EPL Ltd. Tel./fax (495) 532-81-95, tel. 532-93-36.
http://www.epl.ru, E-mail:
epl@epl.ru
580-02
:
-
.
.
-
V
(BR)DSS

V
GS
= 0B, I
D
= 12mA
200
-
-
B
-
V
GS(th)

V
DS
=20 B, I
D
=30 mA
2
-
4
B
I
DSS
V
DS
=160
, V
GS
=0 B
J
= 25C
-
-
2,6
mA
I
DSS
V
DS
=160
, V
GS
=0 B
J
= 125C
-
3
-
mA
-
I
GSS

V
GS
=20 B, V
DS
=0 B
-
-
1
A
.
R
DS(ON)
V
GS
=10B, I
D
=145A
t
300
s, D
2%
-
3,2
3,8
m
C
ISS
V
GS
=0 B, V
DS
= 25 B,
f = 1 M
-
12
-
nF
C
OSS
V
GS
=0 B, V
DS
= 25 B,
f = 1 M
-
3,2
-
nF
C
RSS
V
GS
=0 B, V
DS
= 25 B,
f = 1 M
-
2,8
-
nF
t
d(on)
V
GS
=10 B, V
DS
=100 B,
I
D
=430 A, R
G
=1
-
210
-
ns
t
r
V
GS
=10 B, V
DS
=100 B,
I
D
=430 A, R
G
=1
-
500
-
ns
t
d(off)
V
GS
=10 B, V
DS
=100 B,
I
D
=430 A, R
G
=1
-
900
-
ns
t
f
V
GS
=10 B, V
DS
=100 B,
I
D
=430 A, R
G
=1
-
350
-
ns
-
R
thJC
-
-
0,07
/BT
I
S

V
GS
=0 B, T
J
=T
JM
-
-
580
A
V
SD
I
F
=300A, V
GS
=0 B,
t
300
s, D
2%
-
0,9
1,1
B
t
rr
I
F
=300A, di/dt=400 A/
s,
V
DS
= 100B
-
-
300
ns










EPL. Production of Power Semiconductor Devices.
124482, Moscow, Zelenograd, a/p 167 EPL Ltd. Tel./fax (495) 532-81-95, tel. 532-93-36.
http://www.epl.ru, E-mail:
epl@epl.ru
580-02
.