EDFA Gain Block
for DWDM Applications
PGE 608 21
Description
The PGE 608 21 C-band EDFA family are 40-channel optical amplifiers
intended to be used as pre-, line- or booster amplifiers in DWDM networks.
It is designed for 1 to 3 pump laser configurations and is based on a dual-
sourced platform.The gain block has input and output power monitoring. The
input and output ports have isolators to attenuate spurious reflections in the
system.
External electronic circutry is needed for biasing the pump laser and for
controlling the pump laser temperature. Heat sink is provided via the bottom
surface.
Key Features
Full C-band EDFA (1530-1563 nm)
+20 dBm output power using 3 pumps
Single pumped preamp available
Mid-stage access available
Dual-sourced footprint and pinning
Low noise figure, typical 5 dB
Optical monitor output
Small size (125x150x13 mm)
Applications
Used as a C-band pre-, line- or
booster amplifier EDFA in DWDM
networks.
1
PGE 608 21
2
Figure 2. Mechanical Outline Drawing and Pin Connection
Optical
input
signal
Optical
output
signal
40 pin
electrical
interface
Optical
gain
Input
power
monitor
Output
power
monitor
Optical
output power
monitor
Figure 1. Block diagram
Pin
Description
1
Common 1, 1480 nm pump 2: Laser anode, pump
monitor cathode & thermistor
2
Laser cathode 1480 nm pump 2
3
Pump monitor anode, 1480 nm pump 2
4
Thermistor, 1480 nm pump 2
5
TEC pos, 1480 nm pump 2
6
TEC neg, 1480 nm pump 2
7
Thermistor, PCB
8
Thermistor, PCB
9
Common 2, 980 nm pump: Laser anode, pump
monitor cathode & thermistor
10
Laser cathode, 980 nm pump
11
Pump monitor anode, 980 nm pump
12
Thermistor, 980 nm pump
13
TEC pos, 980 nm pump
14
TEC neg, 980 nm pump
15
SCL EEPROM
16
SDA EEPROM
17
GND
18
GND
19
NC (Spare monitor 1 cathode)
20
NC (Spare monitor 1 anode)
21
Input monitor cathode
22
Input monitor anode
23
NC
24
NC
25
NC
26
NC
27
NC (Spare monitor 2 cathode)
28
NC (Spare monitor 2 anode)
29
Output monitor cathode
30
Output monitor anode
31
GND
32
GND
33
EEPROM +5 V
34
EEPROM 0 V
35
Common 3, 1480 nm pump 1: Laser anode, pump
monitor cathode & thermistor
36
Laser cathode 1480 nm pump 1
37
Pump monitor anode, 1480 nm pump 1
38
Thermistor, 1480 nm pump 1
39
TEC pos, 1480 nm pump 1
40
TEC neg, 1480 nm pump 1
PGE 608 21
3
Optical Characteristics
Electrical and optical characteristics at recommended operating conditions, unless otherwise noted.
04 = single pump,
05 = double pump,
06 = triple pump
Parameter
Conditions
Symbol
04
05
06
Unit
Operating Wavelength
L
1530-1562
nm
Measurement Wavelength
M
1550
nm
Input Power
P
IL
-9.5
-6
-6
dBm
Output Power, min
@ P
IL
and
M
P
Out
14
17
20
dBm
Noise Figure, max
@ P
IL
and
L
NF
6.0
6.0
6.0
dB
Gain
@ P
IL
and
L
G
OPT
17
23
26
dB
Gain Flatness, max
@ P
IL
and
L
(Note 1)
G
Flat
0.8
0.8
0.8
dB
Note 1. G
FLAT
=(G
MAX
-G
MIN
)/2, where G
MAX
is the maximum gain for
L
and GMIN is the minimum gain for
L
.
The gain is measured as dynamic gain under constant saturation.
Electrical Characteristics
Parameter
Conditions
Symbol
04
05
06
Unit
Operating Current, max
I
Drive
300
300+720
300+720x2
mA
Operating Voltage, max
VF
2.4
2.5
2.5
V
Power Dissipation, max
P
E
3.5
10.6
17.7
W
Thermistor Resistance
R
Th
9.5
10
10.5
k
TEC Current, max
@
T=50 K
I
TEC
1.1
1.1+1.5
1.1+1.5x2
A
TEC Voltage, max
@
T=50 K
V
TEC
2.6
2.6+3.8
2.6+3.8x2
V
Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
T
Case
-5
70
C
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Storage Temperature
T
stg
-40
75
C
Drive Current
I
LD_MAX
300/800
mA
CAUTION: Stresses outside those listed in "Absolute Maximum Ratings" may cause permanent damage to the device.
PGE 608 21
4
Ericsson Microelectronics AB
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
1522-PGE 608 21 Rev. D
Ericsson Microelectronics AB, October 2000
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both han-
dling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device produc-
tion and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
SC/SPC
(Other connectors available on request)
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
D A N G E R
D A N G E R
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER
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