EDFA Gain Block
for DWDM Applications
PGE 608 31
Description
This EDFA gain block provides cost effective amplification over the C-
band wavelength range. With its simple configuration and very small
size it is optimized as a booster for Metro DWDM applications.
Key Features
Operating wavelength window:
1530-1560 nm
Operating temperature range:
-5
C to +70
C (with cooled pump)
Compact size (88 x 70 x 12 mm)
Applications
Ideal for Metro DWDM networks,
providing up to 13 dBm output power
PGE 608 31
3
Optical Characteristics
Electrical and optical characteristics over recommended operating conditions, unless otherwise noted.
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Wavelength
L
1530
1560
nm
Input Power
P
IL
-9
-6
0
Output Power
P
out
12
13
dBm
Noise Figure
@ P
IL
=-6 dBm @
L
NF
6
8
dB
Gain Flatness
@ P
IL
=-6 dBm @
L
(Note1)
G
FLAT
-1
1
dB
Note 1. G
FLAT
=(G
MAX
-G
MIN
)/2, where G
MAX
is the maximum gain for
L
and GMIN is the minimum gain for
L
.
The gain is measured as dynamic gain under constant saturation between 1540 and 1560 nm.
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Current
I
DRIVE
720
mA
Operating Voltage
VF
2.5
V
Power Dissipation
P
E
7
W
Thermistor Resistance
R
TH
9.5
10
10.5
k
TEC Current
I
TEC
1.2
A
TEC Voltage
V
TEC
3.3
V
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
T
Case
-5
70
C
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Storage Temperature
T
stg
-40
75
C
Drive Current
I
LD_MAX
800
mA
CAUTION: Stresses outside those listed in "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied.
PGE 608 31
4
Ericsson Microelectronics
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
1522-PGE 608 31 Rev. D
Ericsson Microelectronics AB, March 2001
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both han-
dling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device produc-
tion and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
SC/PC
(Other connectors available on request)
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
D A N G E R
D A N G E R
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER
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