1620 nm DFB Laser
for Supervisory
Channel Applications
PGT 201 40
Description
The laser module is intended as a source for an optical supervisory
channel for systems with in-line amplifiers as proposed by ITU-T in
G.691 and G692. The module includes an InGaAs/InP DFB laser diode,
an InGaAs PIN back facet monitor diode and a TEC.
Key Features
1620 nm DFB laser source
Operating temperature 0
C to +70
C
Low threshold current
Cooled TEC
Bitrates 1 622 Mb/s
Applications
Intended as a laser source for an
optical supervisory channel in D-WDM
systems
1
PGT 201 40
3
Optical Characteristics
Electrical and optical characteristics at recommended operating conditions, unless otherwise noted.
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Peak wavelength
Peak
1613
1620
1627
nm
Differential quantum efficiency
@ P
f
= 1 mW
Q
eff
0.035
W/A
Side mode supression ratio
SMSR
30
35
dB
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
V
f
2
V
Threshold current
I
Th
30
mA
Monitor current
@ P
fiber
= 1 mW
I
Mon
75
470
A
Rise and fall time
t
r
/t
f
1.0
ns
Bandwidth
f
c
400
MHz
Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating case temperature
T
C
0
70
C
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Laser reverse voltage
V
REV_LD
1.0
V
Laser diode forward current
I
F
150
mA
Photodiode reverse voltage
V
REV_MON
15
V
CAUTION: Stresses outside those listed in "Absolute Maximum Ratings" may cause permanent damage to the device.
PGT 201 40
4
Ericsson Microelectronics AB
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
1522-PGT 201 40 Rev. B
Ericsson Microelectronics AB, January 2001
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both
handling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device production
and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
FC/PC
SC
(Other connectors available on request)
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
D A N G E R
D A N G E R
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER
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