e
1
0
10
20
30
40
50
60
0
2
4
6
8
10
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
175
Watts
Above 25C derate by
1.0
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1.0
C/W
PTB 20004
50 Watts, 860900 MHz
Cellular Radio RF Power Transistor
Description
The 20004 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 50 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
50 Watts, 860900 MHz
Class AB Characteristics
50% Collector Efficiency at 50 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20200
20004
LOT CODE
9/28/98
PTB 20004
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA, f = 900 MHz)
G
pe
8.0
9.5
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA, f = 900 MHz)
C
50
--
--
%
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 50 W(PEP), I
CQ
= 200 mA,
IMD
--
-21
--
dBc
f
1
= 899 MHz, f
2
= 900 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA
--
--
10:1
--
f = 900 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 50 W, I
CQ
= 200 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
860
7.1
-1.7
5.0
-3.5
880
6.9
-1.2
5.1
-3.9
900
6.7
-0.6
5.2
-4.5
PTB 20004
3
e
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
6
7
8
9
10
11
12
840
855
870
885
900
915
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 50 W
Gain (dB)
Efficiency (%)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20004 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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