e
1
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0.2
0.4
0.6
0.8
1.0
1.2
Input Power (Watts)
Output Power (Watts)
V
CC
= 24 V
I
CQ
= 100 mA
f = 960 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
65
Watts
Above 25C derate by
0.4
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
2.7
C/W
PTB 20008
10 Watts, 935960 MHz
Cellular Radio RF Power Transistor
Description
The 20008 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
10 Watts, 935960 MHz
Class AB Characteristics
50% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20201
20008
LOT CODE
9/28/98
PTB 20008
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 24 Vdc, Pout = 10 W, I
CQ
= 100 mA, f = 960 MHz)
G
pe
9.5
10
11.5
dB
Collector Efficiency
(V
CC
= 24 Vdc, Pout = 10 W, I
CQ
= 100 mA, f = 960 MHz)
C
50
--
--
%
Intermodulation Distortion
(V
CC
= 24 Vdc, Pout = 10 W(PEP), I
CQ
= 100 mA,
IMD
--
-32
--
dBc
f
1
= 959.999 MHz, f
2
= 960.000 MHz)
Load Mismatch Tolerance
(V
CC
= 24 Vdc, Pout = 10 W, I
CQ
= 100 mA
--
--
30:1
--
f = 960 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 24 Vdc, Pout = 10 W, I
CQ
= 100 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
935
1.5
-2.1
1.6
2.3
960
3.5
4.6
2.1
-3.8
PTB 20008
3
e
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
13
14
920
930
940
950
960
970
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 24 V
Pout = 10 W
Gain (dB)
Efficiency (%)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20008 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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