e
1
0
10
20
30
40
50
60
0
2
4
6
8
10
Input Power (Watts)
Output Power (Watts)
V
CC
= 24 V
I
CQ
= 200 mA
f = 470 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
175
Watts
Above 25C derate by
1.0
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1.0
C/W
PTB 20031
40 Watts, 420470 MHz
RF Power Transistor
Description
The 20031 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40
watts minimum output power, and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
40 Watts, 420470 MHz
Class AB Characteristics
50% Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20200
20031
LOT CODE
9/23/98
PTB 20031
2
e
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
6
7
8
9
10
11
12
410
420
430
440
450
460
470
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 24 V
I
CQ
= 200 mA
Pout = 30 W
Gain (dB)
Efficiency (%)
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
50
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 24 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 420470 MHz)
G
pe
8.0
9.5
--
dB
Collector Efficiency
(V
CC
= 24 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 420470 MHz)
C
50
--
--
%
Intermodulation Distortion
(V
CC
= 24 Vdc, Pout = 40 W(PEP), I
CQ
= 200 mA, f
1
= 469 MHz,
IMD
--
-22
--
dBc
f
2
= 470 MHz)
Load Mismatch Tolerance
(V
CC
= 24 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 420470 MHz
--
--
5:1
--
--all phase angles at frequency of test)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20031 Uen Rev. D 09-23-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
9/23/98
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