e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.4
Adc
Total Device Dissipation at Tflange = 25C
P
D
25
Watts
Above 25C derate by
0.14
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
7.0
C/W
PTB 20074
14 watts, 1.4771.501 GHz
Cellular Radio RF Power Transistor
Description
The 20074 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
14 watts, 1.4771.501 GHz
Class AB Characteristics
30% Collector Efficiency at 10 watts
Gold Metallization
Silicon Nitride Passivated
Package 20201
20074
LOT CODE
0
5
10
15
20
0
1
2
3
4
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 50 mA
f = 1.501 GHz
Typical Output Power vs. Input Power
9/28/98
PTB 20074
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 40 mA, R
BE
= 22
V
(BR)CER
50
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 40 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 20 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 10 V, I
C
= 0.25 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 10 W, I
CQ
= 50 mA, f = 1.501 GHz)
G
pe
7
8
--
dB
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 1.501 GHz)
P-1dB
13
15
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 10 W, I
CQ
= 50 mA, f = 1.501 GHz)
C
30
--
--
%
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 10 W(PEP), I
CQ
= 50 mA,
IMD
--
-30
--
dBc
f
1
= 1.500 GHz, f
2
= 1.501 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 10 W, I
CQ
= 50 mA,
--
--
5:1
--
f = 1.501 GHz--all phase angles at frequency of test)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20074 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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