e
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 20 mA
f = 1.66 GHz
Typical Output Power vs. Input Power
PTB 20078
2.5 Watts, 15251660 MHz
INMARSAT RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
0.5
Adc
Total Device Dissipation at Tflange = 25C
P
D
10.0
Watts
Above 25C derate by
0.057
W/C
Storage Temperature
Tstg
150
C
Thermal Resistance (Tflange = 70C)
R
JC
17.5
C/W
Description
The 20078 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
2.5 Watts, 15251660 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Package 20227
20078
LOT CODE
9/28/98
PTB 20078
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V(
BR)CES
50
--
--
Volts
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
V(
BR)CER
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V(
BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
40
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 1.0 W, I
CQ
= 20 mA,
G
pe
9
11.0
--
dB
f = 1.525; 1.66 GHz)
Power Out at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 20 mA,
P-1dB
2.5
3.5
--
Watts
f = 1.525; 1.66 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 20 mA
--
--
5:1
--
f = 1.660 GHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 20 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.525
16.9
0.5
12.9
23.8
1.593
13.7
2.3
12.9
25.9
1.660
11.3
4.6
12.9
27.7
Z
0
= 50
PTB 20078
3
e
Gain vs. Frequency
(as measured in a broadband circuit)
0
3
6
9
12
15
1.50
1.55
1.60
1.65
1.70
Frequency (GHz)
G
a
in (dB)
V
CC
= 26 V
I
CQ
= 20 mA
Pin = .07 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20078 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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