e
1
0
5
10
15
20
25
0
1
2
3
4
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 0.100 A
f = 960 MHz
Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
5.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
70
Watts
Above 25C derate by
0.4
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
2.5
C/W
PTB 20105
20 Watts, 925960 MHz
Cellular Radio RF Power Transistor
Description
The 20105 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Class AB Characteristics
Performance at 960 MHz, 25 V
CC
- Output Power = 20 W
- Efficiency = 50% Min
Gold Metallization
Silicon Nitride Passivated
Package 20201
20105
LOT CODE
9/28/98
PTB 20105
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5.0
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA, f = 960 MHz)
G
pe
9
10
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA, f = 960 MHz)
C
50
--
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA,
--
--
30:1
--
f = 960 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 20 W, I
CQ
= 100 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
925
3.1
-1.8
3.1
1.4
942
3.0
-1.5
2.9
1.4
960
2.9
-1.2
2.7
1.4
PTB 20105
3
e
Efficiency vs. Output Power
0
10
20
30
40
50
60
4
8
12
16
20
24
Output Power (Watts)
Efficiency (%)
V
CC
= 25 V
I
CQ
= 0.100 A
f = 960 MHz
Gain vs. Frequency
(as measured in a broadband circuit)
7
8
9
10
11
925
930
935
940
945
950
955
960
Frequency (MHz)
G
a
in (dB)
V
CC
= 25 V
I
CQ
= 0.100 A
Pout = 20 W
Output Power vs. Supply Voltage
10
14
18
22
26
17
19
21
23
25
27
Vcc, Supply Voltage
Output Power (Watts)
I
CQ
= 0.100 A
f = 960 MHz
Pin = 2.2 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20105 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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