e
1
0
20
40
60
80
100
0
4
8
12
16
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
20
Adc
Total Device Dissipation at Tflange = 25C
P
D
159
Watts
Above 25C derate by
0.91
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1.1
C/W
PTB 20111
85 Watts, 860900 MHz
Cellular Radio RF Power Transistor
Description
The 20111 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
25 Volt, 860900 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20216
201
11
LOT CODE
9/28/98
PTB 20111
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 85 W, I
CQ
= 200 mA, f = 900 MHz)
G
pe
8.5
9.5
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 85 W, I
CQ
= 200 mA, f = 900 MHz)
C
50
--
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 60 W(PEP), I
CQ
= 200 mA,
--
--
10:1
--
f = 900 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 85 W, I
CQ
= 200 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
860
1.7
-0.8
1.7
-1.6
880
2.0
-1.2
1.8
-1.9
900
1.7
-0.8
1.7
-1.6
PTB 20111
3
e
Intermodulation Distortion vs. Power Output
-40
-36
-32
-28
-24
-20
20
30
40
50
60
70
80
90
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 25 V
I
CQ
= 200 mA
f
1
= 899.95 MHz
f
2
= 900.00 MHz
Efficiency vs. Output Power
0
10
20
30
40
50
60
45
50
55
60
65
70
75
80
85
90
Output Power (Watts)
Efficiency (%)
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
Gain vs. Frequency
(as measured in a broadband circuit)
7
8
9
10
11
860
870
880
890
900
Frequency (MHz)
G
a
in (dB)
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 85 W
Output Power vs. Supply Voltage
50
60
70
80
90
100
18
20
22
24
26
28
Vcc, Supply Voltage
Output Power (Watts)
I
CQ
= 200 mA
Pin = 10 W
f = 900 MHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20111 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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