e
1
Typical Output Power vs. Input Power
0
10
20
30
40
50
0
1
2
3
4
5
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 100 mA
f = 900 MHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
8.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
80
Watts
Above 25C derate by
0.45
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
2.2
C/W
PTB 20134
30 Watts, 860900 MHz
Cellular Radio RF Power Transistor
Description
The 20134 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
30 Watts, 860900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 30 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20201
20134
LOT CODE
9/28/98
PTB 20134
2
e
7
8
9
10
11
12
13
850
860
870
880
890
900
910
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Ef
f
i
cien
cy (
%
)
V
CC
= 25 V
I
CQ
= 100 mA
P
OUT
= 30 W
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
Efficiency (%)
Gain (dB)
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA, f = 900 MHz)
G
pe
8
9.5
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA, f = 900 MHz)
C
50
--
--
%
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 30 W(PEP), I
CQ
= 100 mA,
IMD
--
-30
--
dBc
f = 900 MHz,
f = 1 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA,
--
--
30:1
--
f = 900 MHz--all phase angles at frequency of test)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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