e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
2.6
Adc
Total Device Dissipation at Tflange = 25C
P
D
33
Watts
Above 25C derate by
0.19
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
5.3
C/W
Typical Output Power vs. Input Power
0
2
4
6
8
10
12
0.00
0.25
0.50
0.75
1.00
1.25
Input Power (Watts)
Output Power (Watts)
V
CC
= 25V
I
CQ
= 50 mA
f = 960 MHz
PTB 20145
9 Watts, 915960 MHz
Cellular Radio RF Power Transistor
Description
The 20145 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
9 Watts, 915960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 9 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Package 20208
20145
LOT CODE
9/28/98
PTB 20145
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V
(BR)CEO
24
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
65
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 250 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 9 W, I
CQ
= 50 mA, f = 960 MHz)
G
pe
9
10
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 9 W, I
CQ
= 50 mA, f = 960 MHz)
C
50
--
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 9 W, I
CQ
= 50 mA,
--
--
30:1
--
f = 960 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 9 W, I
CQ
= 50 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
915
2.2
-2.5
3.4
7.1
937
2.2
-2.4
3.5
7.9
960
2.1
-2.2
3.7
8.6
PTB 20145
3
e
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
5
6
7
8
9
10
11
915
930
945
960
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Ef
f
i
cien
cy (
%
)
Vcc = 25 V
I
CQ
= 50 mA
P
OUT
= 9 W
Gain (dB)
Efficiency (%)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20145 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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