e
1
Typical Output Power vs. Input Power
30
35
40
45
50
55
60
65
70
6
7
8
9
10
11
12
Input Power (Watts)
Output Power (Watts)
V
CC
= 24 V
f = 905 MHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
30
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10
Adc
Total Device Dissipation at Tflange = 25C
P
D
175
Watts
Above 25C derate by
1
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1
C/W
PTB 20167
60 Watts, 850960 MHz
RF Power Transistor
Description
The 20167 is an NPN, common base RF power transistor intended
for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum
output power, it is specifically designed for class C power amplifier
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20200
20167
LOT CODE
24 Volt, 905 MHz Common Base Characteristics
- Output Power = 60 W
- Power Gain = 7.0 dB Min
- Efficiency = 60% Min
Double Input/Output Matched for Wideband
Performance
Gold Metallization
Silicon Nitride Passivated
9/28/98
PTB 20167
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V
(BR)CEO
30
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V
(BR)CES
55
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 15 mA
V
(BR)EBO
4.0
--
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 2.0 A
h
FE
20
--
100
--
Output Capacitance
V
CB
= 28 V, f = 1 MHz
C
ob
--
60
--
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Base Power Gain
(V
CC
= 24 Vdc, Pout = 60 W, f = 905 MHz)
G
pb
7.0
7.9
--
dB
Collector Efficiency
(V
CC
= 24 Vdc, Pout = 60 W, f = 905 MHz)
C
60
64
--
%
Load Mismatch Tolerance
(V
CC
= 24 Vdc, Pout = 60 W,
--
--
5:1
--
f = 905 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 24 Vdc, Pout = 60 W)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
850
5.4
-3.6
5.8
-0.7
905
5.3
-2.4
6.2
0.6
960
5.2
-1.4
6.9
1.7
PTB 20167
3
e
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
6
7
7
8
8
9
9
845
860
875
890
905
920
935
950
965
Frequency (MHz)
G
a
in (dB)
57
60
63
66
69
72
75
Efficiency (%)
V
CC
= 24 V
Pout = 60 W
Gain (dB)
Efficiency (%)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20167 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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