e
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.1
0.2
0.3
Input Power (Watts)
Output Power (Watts)
V
CE
= 20 V
I
CQ
= 360 mA
f = 860 MHz
Typical Output Power vs. Input Power
PTB 20206
1.0 Watt, 470860 MHz
RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
13.5
Watts
Above 25C derate by
0.077
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
13.0
C/W
Description
The 20206 is an NPN common emitter RF power transistor intended
for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Class A Characteristics
1.0 Watt, 470860 MHz
-44 dBc Max Two-tone IMD at 1 W(PEP)
Gold Metallization
Silicon Nitride Passivated
Package 20206
20206
LOT CODE
9/28/98
PTB 20206
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
C
= 5 mA, I
B
= 0 A
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
V
(BR)CER
40
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
50
120
--
Output Capacitance
V
cb
= 20 V, I
E
= 0 A, f = 1 MHz
Cobo
--
4.5
--
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CE
= 20 Vdc, Pout = 1 W, I
CQ
= 360 mA, f = 860 MHz)
G
pe
11
11.5
--
dB
Two-tone Intermodulation Distortion
(V
CE
= 20 Vdc, Pout = 1 W(PEP), I
CQ
= 360 mA,
IM
2
--
-46
-44
dBc
f
1
= 860 MHz, f
2
= 860.1 MHz),
Load Mismatch Tolerance
(V
CE
= 20 Vdc, Pout = 2 W, I
CQ
= 360 mA,
--
--
30:1
--
f = 860 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CE
= 20 Vdc, Pout = 1 W, I
CQ
= 360 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
470
7.2
-6.4
13.7
-6.9
704
6.9
-4.1
12.8
2.3
782
5.8
-4.1
14.4
5.0
860
5.8
-3.6
17.2
7.0
Z
0
= 50
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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