e
1
PTB 20228
6.5 Watts, 1.621.66 GHz
RF Power Transistor
20228
LOT CODE
Description
The 20228 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20227
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Input Power (Watts)
Output Power (Watts)
0
16
32
48
64
80
Efficiency (%)
V
CC
= 26 V
I
CQ
= 40 mA
f = 1.661 GHz
Typical Power Out and Efficiency vs. Power In
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
19.7
Watts
Above 25C derate by
0.112
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
8.9
C/W
6.5 Watts, 1.621.66 GHz
Class AB Characteristics
40% Collector Efficiency at 6.5 Watts
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
9/28/98
PTB 20228
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA
V
(BR)CEO
20
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
V
(BR)CER
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
=5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
40
--
--
Output Capacitance
V
CB
= 26 V, I
e
= 0, f = 1 MHz
Cob
6.1
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 40 mA, f = 1.626 & 1.661 GHz)
G
pe
8.5
9.5
--
dB
Gain Compression
(V
CC
= 26 Vdc, I
CQ
= 40 mA, f = 1.661 GHz)
P-1dB
6.5
--
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 6.5 W, I
CQ
= 40 mA,
C
40
--
--
%
f = 1.626 & 1.661 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 6.5 W, I
CQ
= 40 mA,
--
--
5:1
--
f = 1.661 GHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 6.5 W, I
CQ
= 40 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.626
1.32
-2.29
7.02
21.19
1.640
1.27
-1.12
6.72
21.98
1.661
1.21
0.47
6.46
23.17
Z
0
= 50
PTB 20228
3
e
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
7
8
9
10
11
12
1.62
1.63
1.64
1.65
1.66
1.67
Frequency (GHz)
G
a
in (dB)
V
CC
= 26 V
I
C
= 40 mA
Pin = 0.7 W
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20228 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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