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Электронный компонент: PTB20245

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PTB 20245
35 Watts, 2.12.2 GHz
Wide-Band CDMA Power Transistor
20245
LOT CODE
0
10
20
30
40
50
60
0
2
4
6
8
10
12
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 100 mA
f = 2000 MHz
Typical Output Power vs. Input Power
Package 20223
Description
The 20245 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band.
Rated at 35 watts minimum output power for PEP applications, it is
specifically intended for operation as a final or driver stage in Wide
CDMA or TDMA systems. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
35 Watts, 2.12.2 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
3.5
Vdc
Collector Current (continuous)
I
C
7.7
Adc
Total Device Dissipation at Tflange = 25 C
P
D
200
Watts
Above 25C derate by
1.2
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70 C)
R
JC
0.85
C/W
9/28/98
PTB 20245
2
e
7
8
9
10
11
12
2050
2100
2150
2200
2250
Frequency (MHz)
G
a
in (dB)
20
25
30
35
40
45
50
55
60
Output Power & Efficiency
V
CC
= 26 V
I
CQ
= 250 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
2
4
6
8
10
2100
2120
2140
2160
2180
2200
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
CC
= 26 V
I
CQ
= 85 mA
Pout = 35 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency (%
)
Return Loss (dB
)
- 5
-15
-25
-35
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 20 mA
V(
BR)CES
55
--
--
Volts
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 20 mA, R
BE
= 22
V(
BR)CER
55
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V(
BR)EBO
3.5
4.0
--
Volts
DC Current Gain
V
CE
= 10 V, I
C
= 1.5 A
h
FE
30
40
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 10 W, I
CQ
= 85 mA, f = 2.2 GHz)
G
pe
7.5
8.5
--
dB
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 85 mA, f = 2.2 GHz)
P1dB
35.0
--
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 35 W, I
CQ
= 85 mA, f = 2.2 GHz)
C
--
40
--
%
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 17.5 W, I
CQ
= 85 mA
--
--
5:1
--
f = 2.2 GHz--all phase angles at frequency of test)
Typical Performance
4/3/98
PTB 20245
3
e
Output Power vs. Supply Voltage
30
35
40
45
50
55
60
22
23
24
25
26
27
Supply Voltage (Volts)
Output Power (Watts)
I
CQ
= 85 mA
f = 2200 MHz
Power Gain vs. Output Power
5
6
7
8
9
10
0
1
10
100
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
CC
= 26 V
f = 2200 MHz
I
CQ
= 85 mA
I
CQ
= 43 mA
I
CQ
= 21 mA
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
2.05
3.09
3.35
3.20
2.90
2.10
3.79
3.45
2.95
2.50
2.15
4.38
3.10
2.75
2.05
2.20
4.58
2.40
2.50
1.50
2.25
3.98
1.80
2.40
1.30
Z Source
Z Load
Intermodulation Distortion vs. Power Output
-40
-35
-30
-25
-20
5
10
15
20
25
30
35
40
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 26 V
I
CQ
= 85 mA
f
1
= 2.199 GHz
f
2
= 2.200 GHz
Impedance Data
(V
CC
= 26 Vdc, Pout = 35 W, I
CQ
= 85 mA)
Z
0
= 10
4/3/98
PTB 20245
4
e
Test Circuit
Schematic for f = 2.2 GHz
Q1
PTB 20245
NPN RF Transistor
l
1,
l
9
Microstrip 50
l
2
.1
2 GHz
Microstrip 75
l
3
.065
2 GHz
Microstrip 16
l
4
.095
2 GHz
Microstrip 12.5
l
5
.055
2 GHz
Microstrip 9.7
l
6
.055
2 GHz
Microstrip 12.5
l
7
.065
2 GHz
Microstrip 22
C1, C6
0.1
F
1206 Chip
C2, C7
10
F, 35 V SMT Tantalum
C3, C4, C8, C10
20 pF
ATC-100
C5, C9
04 pf
Johanson Trimmer
L1
56 nh
SMT Inductor
L2, L4
3 Turn #22, 0.25" O.D.
L3
4 mm.
SMT Ferrite
R1
22
1206 SMT Resistor
Board
0.031 G-200 Solid Copper Bottom, AlliedSignal
Bias Parts (not shown on layout)
Q2
BCP 56
SMT NPN Transistor
D1
BAV 99
Diode
C10, C11
0.1 pF
SMT Capacitor
R2
2K
Potentiometer
R3, R4
10
1206 SMT Resistor
Parts Layout (not to scale)
* Thermally linked to RF device.
5/20/98
PTB 20245
5
e
Artwork (1 inch
)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
L3
1997 Ericsson Inc.
EUS/KR 1301-PTB 20245 Uen Rev. A 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
9/16/98