e
1
PTB 20264
10 Watts, 1.81.9 GHz
Cellular Radio RF Power Transistor
0
2
4
6
8
10
12
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Input Power (Watts)
Output Power (Watts)
0
20
40
60
80
Efficiency (%)
V
CC
= 26 V
I
CQ
= 50 mA
f = 1845 MHz
Typical Output Power and Efficiency vs. Input Power
Output Power
Efficiency
Package 20243
26 Volt, 1.845 GHz Characteristics
- Output Power = 10 Watts
- Gain = 9.4 dB Typ at 5 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20264
LOT CODE
Description
The 20264 is an NPN, common emitter RF power transistor intended
for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage, R
BE
= 10
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
2.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
30
Watts
Above 25C derate by
0.173
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
5.8
C/W
9/28/98
PTB 20264
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA
V
(BR)CEO
22
26
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 10 mA
V
(BR)CES
55
60
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain at P
OUT
= 5 Watts
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 1805 MHz, 1845 MHz,
G
pe
9.0
9.4
--
dB
1880 MHz)
Gain Compression at P
OUT
= 5 Watts
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 1805 MHz, 1845 MHz,
--
--
--
0.2
dB
1880 MHz)
Gain at P
OUT
= 10 Watts
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 1845 MHz)
G
pe
8.4
--
--
dB
Gain Compression at P
OUT
= 10 Watts
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 1845 MHz)
--
--
--
0.8
dB
Collector Efficiency at P
OUT
= 10 Watts
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 1845 MHz)
C
40
--
--
%
Load Mismatch Tolerance
(V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 50 mA,
--
--
5:1
--
f = 1845 MHz--all phase angles at frequency of test)
Typical Performance
Output Power vs. Supply Voltage
8
9
10
11
12
24.5
25.0
25.5
26.0
26.5
27.0
27.5
Supply Voltage (Volts)
Output Power (Watts)
I
CQ
= 50 mA
P
IN
= 1.3 W
f = 1845 MHz
4
6
8
10
12
1800
1820
1840
1860
1880
1900
Frequency (MHz)
G
a
in (dB)
V
CC
= 26 V
I
CQ
= 50 mA
P
OUT
= 5 W
Gain vs. Frequency
(as measured in a broadband circuit)
9/28/98
PTB 20264
3
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Impedance Data
(data shown for fixed-tuned broadband circuit)
V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 50 mA
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1805
11.4
2.6
12.2
8.1
1850
11.0
3.7
12.2
9.6
1880
10.9
4.3
12.4
10.6
Z Source
Z Load
Z
0
= 50
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1997 Ericsson Inc.
EUS/KR 1301-PTB 20264 Uen Rev. A 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
9/28/98
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