e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
G
ps
11.0
12.5
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.4 A Total, f = 960 MHz)
P-1dB
125
130
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
h
50
55
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W(PEP), I
DQ
= 1.4 A Total,
Y
--
--
10:1
--
f = 959.9, 960 MHz--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
PTF 10020
125 Watts, 860960 MHz
GOLDMOS
TM
Field Effect Transistor
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
Input Power (Watts)
Output Powe
r (W
a
tts
)
V
DD
= 28 V
I
DQ
= 1.4 A Total
Typical Output Power vs. Input Power
900 MHz
960 MHz
860 MHz
Package 20240
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
10020
A-1234569813
PTF 10020
2
e
Electrical Characteristics
(100% Tested--characteristics, conditions and limits shown per side)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 5 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
4.3
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.5
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
(1)
V
DSS
65
Vdc
Gate-Source Voltage
(1)
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at
P
D
290
Watts
Above 25C derate by
1.67
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
0.6
C/W
(1)
per side
Typical Performance
Broadband Test Fixture Performance
4
6
8
10
12
14
16
18
20
925
930
935
940
945
950
955
960
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 1.4 A Total
P
OUT
= 125 W
Gain
Return Loss
Efficiency %
Return Loss (dB
)
- 5
-15
-25
-35
Efficienc
y
Broadband Test Fixture Performance
4
8
12
16
20
860
870
880
890
900
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 1.4 A Total
P
OUT
= 125 W
Gain
Return Loss
Efficiency %
Return Loss (dB
)
- 5
-15
-25
-35
Efficienc
y
PTF 10020
3
e
Typical Performance
Efficiency vs. Output Power
0
10
20
30
40
50
60
70
80
30
50
70
90
110
130
Output Power (Watts)
Efficiency (%
)
V
DD
= 28 V
I
DQ
= 1.4 A Total
f = 960 MHz
-60
-50
-40
-30
-20
-10
20
30
40
50
60
70
80
90
100 110 120
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V
I
DQ
= 1.4 A Total
f
1
= 941.9 MHz
f
2
= 942.0 MHz
3rd order
5th
7th
Intermodulation Distortion vs. Output Power
Output Power vs. Supply Voltage
50
70
90
110
130
150
20
22
24
26
28
30
32
34
V
DS
, Supply Voltage
Output Power (Watts)
I
DQ
= 1.4 A Total
f = 960 MHz
Pin = 5.4 W
Power Gain vs. Output Power
11
12
13
14
15
1
10
100
1000
Output Power (W)
G
a
in (dB)
I
DQ
= 1.4 A
I
DQ
= 700 mA
I
DQ
= 350 mA
V
DD
= 28 V
f = 960 MHz
Capacitance vs. Voltage
(one side)
*
0
20
40
60
80
100
120
140
160
180
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
3
6
9
12
15
18
21
24
27
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
*This part is internally matched. Measurements of the finished
product will not yield these figures.
10
11
12
13
14
15
860
880
900
920
940
960
Frequency (MHz)
Ga
i
n
50
70
90
110
130
150
V
DD
= 28 V
I
DQ
= 1.4 A Total
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W )
Efficiency (%)
Gain (dB)
O
u
tp
u
t
P
o
w
er &
E
fficien
cy
PTF 10020
4
e
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
835
1.7
-8.9
2.3
-1.3
860
1.9
-9.3
2.3
-0.9
885
1.9
-9.8
2.3
-1.0
910
1.9
-11.8
2.2
-1.2
935
2.5
-12.9
2.2
-1.3
960
2.2
-12.8
2.2
-2.1
985
1.8
-11.0
2.2
-2.2
Z Source
Z Load
G
D
G
S
D
Impedance Data
(V
DD
= 28 V, I
DQ
= 1.4 A, P
OUT
= 125 W)
Z
0
= 50
W
Bias Voltage vs. Temperature
0.94
0.96
0.98
1.00
1.02
1.04
-20
30
80
130
Temp. (C)
Bias Voltage (V)
0.40
1.32
2.25
3.17
4.09
5.02
Voltage normalized to 1.0 V
Series show current (A)
Typical Performance
PTF 10020
5
e
Typical Scattering Parameters
(one side only)
(V
DS
= 28 V, I
D
= 4 A)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
800
0.974
176
0.657
-10.6
0.002
50.9
0.97
-172
810
0.974
175.9
0.66
-11.5
0.002
49
0.971
-172.1
820
0.974
175.7
0.662
-12.7
0.002
52.9
0.971
-172.3
830
0.974
175.6
0.666
-13.6
0.002
53.4
0.972
-172.4
840
0.972
175.4
0.669
-14.8
0.002
52.6
0.972
-172.5
850
0.972
175.4
0.672
-16
0.002
54.9
0.972
-172.7
860
0.971
175.2
0.674
-16.9
0.002
56.1
0.972
-172.8
870
0.969
175
0.679
-18
0.002
52.5
0.972
-172.8
880
0.968
174.9
0.686
-19.1
0.002
53.4
0.973
-173
890
0.966
174.8
0.695
-20.2
0.002
56.2
0.975
-173.1
900
0.964
174.7
0.705
-21.4
0.002
58.1
0.977
-173.2
910
0.963
174.6
0.716
-23
0.002
55.5
0.977
-173.4
920
0.961
174.3
0.729
-24.6
0.002
57.7
0.976
-173.6
930
0.958
174.2
0.743
-26.3
0.002
57
0.977
-173.6
940
0.956
174.1
0.757
-28.2
0.002
56.7
0.978
-173.8
950
0.953
174
0.774
-30.3
0.002
58.7
0.979
-174
960
0.95
173.8
0.791
-32.7
0.002
60.2
0.979
-173.9
970
0.946
173.8
0.807
-35.4
0.002
60
0.981
-174.1
980
0.942
173.7
0.821
-38.1
0.002
59.5
0.982
-174.2
990
0.937
173.6
0.838
-41
0.002
62
0.983
-174.3
1000
0.933
173.6
0.853
-44
0.002
62.2
0.983
-174.4
Test Circuit
l
1,
l
20
50
W
, .030
l
l
2,
l
19
20
W
, .080
l
l
3,
l
18
32
W
, .191
l
l
4,
l
17
25
W
, .500
l
l
5,
l
6
25
W
, .091
l
l
7,
l
10
7
W
, .056
l
l
8,
l
9
13.0
W
, .017
l
l
11,
l
12
13.0
W
, .017
l
l
13,
l
14
7.0
W
, .093
l
l
15,
l
16
10.2
W
, .030
l
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
Schematic for f = 960 MHz
DUT
PTF 10020
C1-2
15 pF, Capacitor ATC 100 B
C3
0.353.5 pF, Variable Capacitor
C4
7.5 pF, Capacitor ATC 100 A
C5
19 pF, Variable Capacitor
C6-7, C10, C13-14, C18
33 pF, Capacitor ATC 100 B
C8, C11
10
m
F, +10 V Electrolytic Capacitor
C9, C12, C15, C19
0.01
m
F, Capacitor ATC 100 B
C16, C17, C20, C21
10
m
F, +30 V Electrolytic Capacitor
L1. L2
4 Turn, #20 AWG, .120" I.D.
R1, R2, R4, R5
1.0 K,
W
Resistor
R3, R6
5.1 K, 1/4
W
Resistor
PTF 10020
6
e
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1998 Ericsson Inc.
EUS/KR 1301-PTF 10020 Uen Rev. A 01-15-00
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Components Layout (not to scale)
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