1
e
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
G
ps
11.0
12.5
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 800 mA Total, f = 900 MHz)
P-1dB
85
90
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
h
50
55
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 85 W(PEP), I
DQ
= 800 mA Total,
Y
--
--
3:1
--
f = 867, 867.1 MHz--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
PTF 10036
85 Watts, 860960 MHz
GOLDMOS
TM
Field Effect Transistor
0
20
40
60
80
100
0
1
2
3
4
5
6
Input Power (Watts)
Out
put
P
ower (
W
at
t
s
)
10
20
30
40
50
60
E
fficien
cy
V
DD
= 28 V
I
DQ
= 800 mA Total
f = 960 MHz
Typical Output Power vs. Input Power
Output Pow er
Efficiency (%)
Package 20240
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
10036
A-1234569744
Description
The PTF 10036 is an internally matched, 85 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
PTF 10036
e
2
Broadband Test Fixture Performance
0
3
6
9
12
15
18
860
865 870
875 880
885 890
895 900
Frequency (MHz)
Gai
n
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 800 mA Total
P
OUT
= 85 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Effi
ci
enc
y
Ret
u
rn Los
s
- 0
-10
-15
-20
Broadband Test Fixture Performance
4
6
8
10
12
14
16
925
935
945
955
Frequency (MHz)
Gai
n
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 800 mA Total
P
OUT
= 85 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Effi
ci
enc
y
Ret
u
rn Los
s
- 5
-15
-25
-35
`
Electrical Characteristics
(100% Tested--characteristics, conditions and limits shown per side)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 5 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.8
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
(1)
V
DSS
65
Vdc
Gate-Source Voltage
(1)
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at
P
D
250
Watts
Above 25C derate by
1.43
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
0.7
C/W
(1)
per side
Typical Performance
PTF 10036
e
3
Output Power vs. Supply Voltage
50
60
70
80
90
100
20
22
24
26
28
30
32
34
Supply Voltage (Volts)
O
u
tp
u
t
Po
w
e
r (Watts)
I
DQ
= 800 mA Total
f = 960 MHz
P
IN
= 4.5 W
Power Gain vs. Output Power
10
11
12
13
14
15
16
1.0
10.0
100.0
Output Power (Watts)
P
ower Gai
n
(
d
B)
I
DQ
= 800 mA
I
DQ
= 400 mA
I
DQ
= 200 mA
V
DD
= 28 V
f = 960 MHz
0
5
10
15
20
25
860
880
900
920
940
960
Frequency (MHz)
G
a
in
(d
B
)
20
40
60
80
100
120
Out
put
P
ower & E
f
f
i
ci
enc
y
V
DD
= 28 V
I
DQ
= 800 mA Total
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Efficiency (%)
Output Pow er (W)
G a in (d B )
Intermodulation Distortion vs. Power Output
-60
-50
-40
-30
-20
-10
10
20
30
40
50
60
70
80
90
100
Output Power (Watts-PEP)
I
M
D (dBc)
V
DD
= 28 V
I
DQ
= 800 mA Total
f
1
= 880.0 MHz
f
2
= 880.1 MHz
3rd
5th
7th
0
20
40
60
80
100
120
140
160
0
10
20
30
40
Supply Voltage (Volts)
Cds & Cgs (pF
)
0
2
4
6
8
10
12
14
16
18
20
Crss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Capacitance vs. Supply Voltage
(one side)
*
* This part is internally matched. Measurements of the
finished product will not yield these results.
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V)
0.43
1.25
2.08
2.9
3.71
4.53
Voltage normalized to 1.0 V
Series show current (A)
PTF 10036
e
4
Typical Scattering Parameters
(one side only)
(V
DS
= 28 V, I
D
= 1.5 A)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.913
-167.7
11.706
62.7
0.008
-21.5
0.605
-126.8
150
0.934
-171.3
6.956
47.4
0.007
-31.1
0.725
-136.6
200
0.950
-173.4
4.507
37.7
0.006
-38.4
0.799
-143.5
250
0.962
-175.0
3.257
29.4
0.005
-43.8
0.873
-148.7
300
0.968
-176.4
2.413
22.8
0.004
-42.4
0.887
-153.0
350
0.971
-177.6
1.905
18.3
0.003
-35.6
0.922
-156.1
400
0.974
-178.6
1.555
13.2
0.002
-30.6
0.943
-158.9
450
0.975
-179.6
1.297
10.4
0.002
-11.8
0.943
-160.6
500
0.976
179.4
1.117
6.5
0.001
7.4
0.961
-162.6
550
0.976
178.4
0.978
3.6
0.002
24.6
0.960
-164.0
600
0.975
177.4
0.881
0.9
0.002
49.2
0.960
-165.1
650
0.975
176.6
0.801
-1.8
0.002
58.7
0.969
-166.6
700
0.972
175.7
0.750
-3.8
0.003
65.0
0.962
-167.1
750
0.971
174.6
0.713
-6.0
0.004
67.9
0.967
-168.3
800
0.968
173.3
0.688
-8.6
0.005
66.2
0.970
-169.0
850
0.968
172.4
0.677
-10.9
0.005
71.8
0.962
-169.4
900
0.962
171.0
0.686
-13.6
0.006
71.3
0.965
-170.5
950
0.956
169.6
0.704
-17.3
0.007
69.6
0.966
-170.8
1000
0.945
167.8
0.750
-21.4
0.008
67.1
0.962
-171.0
1050
0.926
165.7
0.819
-27.7
0.009
64.8
0.961
-171.9
1100
0.887
163.0
0.938
-36.3
0.011
57.6
0.964
-171.6
1150
0.803
160.6
1.128
-51.8
0.013
46.6
0.965
-171.4
1200
0.662
164.4
1.299
-77.1
0.014
27.1
0.981
-171.8
1250
0.659
-178.9
1.183
-109.8
0.012
-0.2
1.006
-172.1
1300
0.803
-174.8
0.856
-136.0
0.007
-16.6
1.008
-173.7
1350
0.897
-177.2
0.587
-151.8
0.004
-14.3
1.004
-175.0
1400
0.938
-179.7
0.416
-161.0
0.002
13.8
1.005
-175.1
1450
0.963
178.1
0.315
-169.1
0.003
50.8
0.996
-176.2
1500
0.977
176.3
0.238
-174.6
0.003
60.3
1.000
-176.4
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
860
2.5
-8.8
3.9
0.1
900
2.0
-10.0
3.2
0.1
960
2.7
-10.4
2.6
-0.6
Z Source
Z Load
G
D
G
S
D
Impedance Data
V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total
0.1
0.3
0.2
0.4
0.1
0.2
0.1
0.3
0.2
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
-
-->
5
0.
05
<
--
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Source
960 MHz
860 MHz
860 MHz
Z Load
960 MHz
Z
0
= 50
W
PTF 10036
e
5
Schematic for f = 900 MHz
DUT
PTF 10036
C1-2
15 pF, Capacitor ATC 100 B
C3
0.353.5 pF, Variable Capacitor
C4
19 pF, Variable Capacitor
C5-6, C9, C12-13, C17
33 pF, Capacitor ATC 100 B
C7, C10
10
m
F, +10 V Electrolytic Capacitor
C8, C11, C14, C18
0.01
m
F, Capacitor ATC 100 B
C15, C16, C19, C20
10
m
F, +30 V Electrolytic Capacitor
L1. L2
4 Turn, #20 AWG, .120" I.D.
R1, R2, R4, R5
1.0 K,
W
Resistor
R3, R6
5.1 K, 1/4
W
Resistor
l
1,
l
22
50
W
, .030
l
l
2,
l
21
20
W
, .080
l
l
3,
l
20
32
W
, .191
l
l
4,
l
19
25
W
, .500
l
l
5,
l
6
25
W
, .091
l
l
7,
l
10
7
W
, .056
l
l
8,
l
9
13.0
W
, .017
l
l
11,
l
12
13.0
W
, .017
l
l
13,
l
14
7.0
W
, .064
l
l
15,
l
16
10.0
W
, .029
l
l
17,
l
18
19.0
W
, .028
l
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
Components Layout (not to scale)
Test Circuit
PTF 10036
e
6
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1997 Ericsson Inc.
EUS/KR 1301-PTF 10036 Uen Rev. A 02-18-99
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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