e
1
PTF 10111
6 Watts, 1.5 GHz
GOLDMOS
TM
Field Effect Transistor
10111
A-1234569820
0
1
2
3
4
5
6
7
8
0.0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
Out
put
P
ower (
W
at
t
s
)
V
DD
= 28V
I
DQ
= 75 mA
f = 1.5 GHz
Typical Output Power vs. Input Power
Package 20222
Performance at 1.5 GHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 50% Typ
- Power Gain = 16 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
100% Lot Traceability
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier
applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at Tflange = 25C
P
D
36
Watts
Above 25C derate by
0.208
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
q
JC
4.8
C/W
PTF 10111
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 40 mA
V
(BR)DSS
65
68
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 0.5 A
g
fs
--
0.2
--
Siemens
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 6 W, I
DQ
= 75 mA, f = 1.5 GHz)
G
ps
15.0
16
--
dB
Power Output at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 75 mA, f = 1.5 GHz)
P-1dB
6
7
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 6 W, I
DQ
= 75 mA, f = 1.5 GHz)
h
D
45
50
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 6 W, I
DQ
= 75 mA, f = 1.5 GHz--
Y
--
--
30:1
--
all phase angles at frequency of test)
Typical Performance
5
8
11
14
1300
1400
1500
1600
1700
Frequency (MHz)
G
a
in
(d
B
)
0
10
20
30
40
50
60
70
80
90
Out
put
P
ower & E
f
f
i
ci
enc
y
V
DD
= 28 V
I
DQ
= 75 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Pow er (W)
Efficiency (%)
Gain
Broadband Test Fixture Performance
12
13
14
15
16
1450
1475
1500
1525
1550
Frequency (MHz)
G
a
in
(d
B
)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 75 mA
P
OUT
= 6 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Effi
ci
ency (%
)
Return Loss (dB
)
- 5
-15
-25
-35
PTF 10111
e
3
Output Power vs. Supply Voltage
5
6
7
8
9
10
22
24
26
28
30
32
34
Supply Voltage (Volts)
Out
put
P
ower (
W
at
t
s
)
I
DQ
= 75 mA
f = 1500 MHz
-70
-60
-50
-40
-30
-20
-10
0
1
2
3
4
5
6
7
8
Output Power (Watts-PEP)
IM
D (d
Bc)
V
DD
= 28 V
I
DQ
= 75 mA
f
1
= 1500.0 MHz
f
2
= 1500.1 MHz
Intermodulation Distortion vs. Output Power
IM3
IM7
IM5
Power Gain vs. Output Power
9
10
11
12
13
14
15
0.0
0.1
1.0
10.0
Output Power (Watts)
P
ower Gai
n
(
d
B)
V
DD
= 28 V
f = 1.5 Hz
I
DQ
= 75 mA
I
DQ
= 38 mA
I
DQ
= 19 mA
Capacitance vs. Supply Voltage
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF
)
0
1
2
3
4
5
Crss
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Bias Voltage vs. Temperature
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V)
0.05
0.145
0.24
0.335
0.43
0.525
Voltage normalized to 1.0 V
Series show current (A)
PTF 10111
4
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 300 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.867
-65
21.8
131
0.010
42
0.801
-41
200
0.832
-77
19.2
123
0.011
34
0.765
-50
300
0.843
-106
14.4
97
0.013
18
0.740
-72
400
0.844
-123
11.0
81
0.014
4
0.744
-88
500
0.852
-133
8.71
69
0.013
-7
0.774
-98
600
0.862
-140
7.08
59
0.011
-15
0.815
-107
700
0.868
-146
5.79
50
0.009
-19
0.836
-116
800
0.874
-151
4.80
42
0.007
-19
0.851
-123
900
0.882
-155
4.05
35
0.006
-16
0.861
-129
1000
0.886
-158
3.48
29
0.004
-7
0.869
-133
1100
0.893
-161
3.04
24
0.003
20
0.885
-137
1200
0.899
-164
2.69
19
0.003
57
0.897
-141
1300
0.907
-167
2.43
14
0.005
74
0.912
-145
1400
0.905
-170
2.19
9
0.007
80
0.921
-148
1500
0.903
-173
2.00
4
0.008
83
0.928
-151
1600
0.898
-175
1.83
0
0.011
85
0.929
-154
1700
0.896
-177
1.71
-5
0.013
86
0.933
-157
1800
0.892
-179
1.60
-9
0.016
83
0.934
-159
1900
0.889
178
1.52
-13
0.020
78
0.937
-161
2000
0.885
176
1.45
-17
0.023
69
0.940
-163
2100
0.882
173
1.40
-21
0.023
59
0.944
-165
2200
0.880
171
1.37
-25
0.021
60
0.950
-168
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
1.3
9.0
2.5
11.5
6.0
1.4
6.6
0.6
12.0
6.5
1.5
6.8
-1.0
11.5
7.3
1.5
6.9
-1.6
10.5
8.2
1.5
7.9
-0.6
9.0
5.4
1.6
8.3
0.2
9.1
4.9
1.7
8.2
0.5
10.0
4.0
Z Source
Z Load
G
S
D
Impedance Data
(V
DD
= 28 V, I
DQ
= 75 mA, P
OUT
= 6 W)
Z
0
= 50
W
PTF 10111
e
5
Placement Diagram (not to scale)
Test Circuit
Test Circuit Block Diagram for f = 1.5 GHz
DUT
PTF 10111
C1, C79
33 pF, Capacitor ATC 100 B
C2, C3
2.2 pF, Capacitor ATC 200 B
C10, C11
0.1
m
F, 50 V, Capacitor
C4, C5
1.5 pF, Capacitor ATC 100 A
C6
2.0 pF, Capacitor ATC 100 A
C12
100
m
F, 50 V, Electrolytic Capacitor
l
1
0.21
l
1.5 GHz
Microstrip 50
W
l
2
0.037
l
1.5 GHz
Microstrip 33.3
W
l
3
0.045
l
1.5 GHz
Microstrip 18.5
W
l
4
0.13
l
1.5 GHz
Microstrip 12.4
W
l
5
0.07
l
1.5 GHz
Microstrip 19.8
W
l
6
0.20
l
1.5 GHz
Microstrip 22
W
l
1
0.18
l
1.5 GHz
Microstrip 50
W
L1, L2
3 Turn, #22 AWG, 0.120" I.D.
R1, R2, R3
10 K, 1/4 W Resistor
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
PDF 
ZIP