e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 15 W, I
DQ
= 600 mA, f = 2.11 GHz)
G
ps
10.0
11.0
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 600 mA, f = 2.17 GHz)
P-1dB
50
--
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA, f = 2.17 GHz)
h
D
30
35
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA, f = 2.17 GHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
PTF 10122
50 Watts WCDMA, 2.12.2 GHz
GOLDMOS
TM
Field Effect Transistor
Package 20248
0
10
20
30
40
50
60
0
1
2
3
4
5
6
Input Power (Watts)
Output Power (Watts)
0
10
20
30
40
50
Efficiency (%
)
V
DD
= 28 V
I
DQ
= 600 mA
f = 2.17 GHz
Typical Output Power vs. Input Power
Description
The PTF 10122 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for WCDMA applications
from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of
gain. Nitride surface passivation and full gold metallization ensure ex-
cellent device lifetime and reliability.
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 50 Watts Min
- Gain = 11.0 dB Typ
- Efficiency = 35% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
10122
A-1234569946
PTF 10122
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 100 mA
V
(BR)DSS
65
--
--
Volts
Zero Gate Voltage Drain Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
2.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 150 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 2 A
g
fs
--
4.0
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
237
Watts
Above 25C derate by
1.35
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
0.74
C/W
Typical Performance
7
8
9
10
11
12
2000
2100
2200
2300
Frequency (MHz)
Ga
i
n
20
30
40
50
60
70
Output Power & Efficienc
y
V
DD
= 28 V
I
DQ
= 600 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
6
7
8
9
10
11
12
13
14
2100
2125
2150
2175
2200
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
V
DD
= 28 V
I
DQ
= 600 mA
P
OUT
= 15 W
Gain
Return Loss
Efficiency @ P-1dB
Efficiency (%
)
Return Loss (dB
)
0
- 5
-10
-15
-20
-25
PTF 10122
3
e
Output Power vs. Supply Voltage
35
45
55
65
75
22
24
26
28
30
32
34
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 600 mA
f = 2.2 GHz
-70
-60
-50
-40
-30
-20
0
10
20
30
40
50
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V, I
DQ
= 600 mA
f
1
= 2199 MHz, f
2
= 2200 MHz
Intermodulation Distortion vs. Output Power
3rd Order
5th
7th
Power Gain vs. Output Power
6
8
10
12
0.1
1.0
10.0
100.0
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 28 V
f = 2.2 GHz
I
DQ
= 600 mA
I
DQ
= 300 mA
I
DQ
= 150mA
Capacitance vs. Supply Voltage *
0
40
80
120
160
200
240
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
6
12
18
24
Crs
s
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
* This part is internally matched. Measurements of the finished
product will not yield these results.
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as V
o
ltage (V
)
0.400
1.383
2.367
3.350
4.333
5.317
Voltage normalized to 1.0 V
Series show current (A)
PTF 10122
4
e
Test Circuit
Test Circuit Block Diagram for f = 2.12.2 GHz
Q1
PTF 10122
LDMOS RF Transistor
l
1
.240
l
@ 2.15 GHz
Microstrip 50
W
l
2
.0281
l
@ 2.15 GHz
Microstrip 14.7
W
l
3
.085
l
@ 2.15 GHz
Microstrip 9.5
W
l
4
.104
l
@ 2.15 GHz
Microstrip 78
W
l
5
.120
l
@ 2.15 GHz
Microstrip 6.82
W
l
6
.063
l
@ 2.15 GHz
Microstrip 10.88
W
l
7
.216
l
@ 2.15 GHz
Microstrip 65
W
l
8
.174
l
@ 2.15 GHz
Microstrip 50
W
C1, C9
10
m
F Chip Cap
ATC 100 B
C2, C10
0.1
m
F Chip Cap
ATC 100 B
C3, C4, C5, C6 -- 10 pF Chip Cap
ATC 100 B
C7
0.1
m
F, 50 V
Digi-Key Capacitor 2.2 QBK
C8
100
m
F, 50 V
Digi-Key Capacitor
L1
2.7 nH
Chip Inductor
L2
6mm
SMT Ferrite Bead
R1, R2
220
W
Chip Resistor
Digi-Key 2.2 QBK
Circuit Board -- Dielectric Thickness = 0.050",
e
r
= 6.0 @ 1 MHz, 2 oz. Copper, TMM6,
Rogers
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
2.00
2.88
-7.20
1.05
-0.90
2.05
3.70
-7.80
1.30
-1.30
2.10
4.80
-8.80
1.50
-1.50
2.15
8.00
-8.90
1.40
-1.90
2.20
9.50
-7.30
1.30
-2.00
2.25
11.00
-3.00
1.22
-1.70
2.30
10.00
-0.60
1.30
-1.40
Impedance Data
V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA
Z Source
Z Load
G
S
D
Z
0
= 50
W
PTF 10122
5
e
Parts Layout (not to scale)
e
10122
A-1234569946
Artwork (not to scale)
PTF 10122
6
e
Package Mechanical Specifications
Package 20248
Unless otherwise specified
Pins: 1.Drain 2.Source 3.Gate
all tolerance 0.005"
Lead Thickness: 0.004 +0.002/-0.001"
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1998 Ericsson Inc.
EUS/KR 1301-PTF10122 Uen Rev. A 11-16-99
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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