e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 165 W, I
DQ
= 1.5 A Total, f = 894 MHz)
G
ps
15.0
16.0
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.5 A Total, f = 880 MHz)
P-1dB
165
180
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 165 W, I
DQ
= 1.5 A Total, f = 894 MHz)
h
45
50
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 165 W, I
DQ
= 1.5 A Total,
Y
--
--
10:1
--
f = 893.9, 894 MHz--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
PTF 10161
165 Watts, 869894 MHz
GOLDMOS
Field Effect Transistor
20
60
100
140
180
0
1
2
3
4
5
6
7
8
Input Power (Watts)
Output Power (Watts)
0
15
30
45
60
V
DD
= 28.0 V
I
DQ
= 1.5 A Total
f = 880 MHz
Typical Output Power & Efficiency vs. Input Power
Output Power
Efficiency
E
fficiency (%)
Package 20250
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 165 Watts
- Power Gain = 16.0 dB Typ
- Drain Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Description
The PTF 10161 is an internally matched,165 watt GOLDMOS FET
intended for large signal amplifier applications from 869 to 894 MHz.
It typically operates with 50% efficiency and 16 db of gain. Nitride
surface passivation and full gold metallization ensure excellent device
lifetime and reliability.
10161
1234560055
PTF 10161
2
e
Electrical Characteristics
(per side) (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 5 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
4.3
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.5
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
(1)
V
DSS
65
Vdc
Gate-Source Voltage
(1)
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at
P
D
500
Watts
Above 25C derate by
2.85
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
0.35
C/W
(1)
per side
Typical Performance
Broadband Test Fixture Performance
8
10
12
14
16
865
870
875
880
885
890
895
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 1.5 A Total
P
OUT
= 165 W
Return
Loss (dB)
Efficiency (%)
Efficiency
Return Loss
- 5
-10
-15
-20
-25
Gain
10
12
14
16
18
865
870
875
880
885
890
895
Frequency (MHz)
Ga
i
n
25
75
125
175
225
O
u
tput Pow
e
r
&
Efficiency
V
DD
= 28 V
I
DQ
= 1.5 A Total
Typical P
OUT
(at P-1dB), Gain & Efficiency
vs. Frequency
Output Power (W)
Gain (dB)
Efficiency (%)
PTF 10161
3
e
Typical Performance
(cont.)
Output Power vs. Supply Voltage
40
60
80
100
120
140
160
180
200
18
20
22
24
26
28
30
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 1.5 A Total
f = 894 MHz
-60
-50
-40
-30
-20
-10
30
50
70
90
110
130
150
170
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V
I
CQ
= 1.5 A Total
f
1
= 880.0 MHz
f
2
= 880.1 MHz
3rd order
Intermodulation Distortion vs. Output Power
Capacitance vs. Supply Voltage
(per side)
*
0
100
200
300
400
500
600
0
10
20
30
40
Supply Voltage (Volts)
Cds
& Cgs
(pF)
.
5
15
25
35
45
55
65
75
85
95
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
*This part is internally matched. Measurements of the finished
product will not yield these figures.
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
5
30
55
80
105
Case Temperature (C)
B
i
as Voltage (V)
1.72
5
8.32
11.6
14.84
18.12
Voltage normalized to 1.0 V
Series show current (A)
Gate-Source Voltage vs. Case Temperature
PTF 10161
4
e
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
860
2.3
1.6
1.60
-1.1
870
1.9
0.8
1.70
-1.7
880
1.8
0.3
1.90
-2.1
890
1.7
0.1
1.95
-1.8
900
1.6
-0.2
1.80
-1.5
Z Source
Z Load
G
D
G
S
D
Impedance Data
V
DD
= 28 V, I
DQ
= 1.5 A Total, P
OUT
= 165 W
0.1
0.1
0.2
0.1
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
-
--
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Load
Z Source
900 MHz
860 MHz
860 MHz
900 MHz
Z
0
= 50
W
PTF 10161
5
e
D1, D2
PTF 10161
l
1,
l
28
0.255
l
894
MHz Microstrip 52.3
W
l
2
0.121
l
894 MHz Microstrip 22.1
W
l
3
0.097
l
894
MHz Microstrip 37.3
W
l
4,
l
25
0.482
l
894 MHz Microstrip 27.8
W
l
5,
l
24
0.016
l
894 MHz Microstrip 27.8
W
l
6,
l
23
0.052
l
894 MHz Microstrip 27.8
W
l
7,
l
8
0.013
l
894
MHz Microstrip 22.2
W
l
9,
l
10
0.065
l
894
MHz Microstrip 22.2
W
l
11,
l
12
0.048
l
894 MHz Microstrip 13.1
W
l
13,
l
14
0.024
l
894 MHz Microstrip 10.4
W
l
15,
l
16
0.017
l
894 MHz Microstrip 10.3
W
l
17,
l
18
0.105
l
894 MHz Microstrip 8.4
W
l
19,
l
20
0.080
l
894 MHz Microstrip 8.4
W
l
21,
l
22
0.010
l
894 MHz Microstrip 8.4
W
l
26
0.120
l
894 MHz Microstrip 37.3
W
l
27
0.093
l
894 MHz Microstrip 28.9
W
Circuit Board
.031" Thick,
e
r
= 4.0, 2 oz. Copper,
G200, Cirexx
Schematic for f = 894 MHz
C1, C8, C12, C19
Capicitor, Ceramic Chip, .01 F
Digi-Key PCC103BNCT-ND
C2, C9, C14, C15, C21, C22
Capicitor, 10 f, 35V, Tantalum TE series SMD
Digi-Key PCS6 106TR-ND
C3, C10, C13, C17, C18, C20
Capicitor, 33 pF
100B 330
C4, C7
Capicitor, 15 pF
100B 150
C6
Capicitor, 11 pF
100B 110
C5
Capicitor, 1.7 pF
100B 1R7
C11
Capicitor, 3.0 pF
100B 3R0
C16
Capicitor, 5.1 pF
100B 5R0
J1, J2
Connector, SMA, Female, Panel Mount
1301-RPM 513 412/53
L1, L2
4 Turns, 22 AWG, .120" I.D.
R1, R2, R3, R4
Chip Resistor 1/8W-5% SMD, 510 ohm
1206 Digi-Key PXX*KECT-ND
R5, R6
Resistor, 220 ohm Digi-Key 220QBK-ND
Test Circuit
PTF 10161
6
e
Artwork (not to scale)
Assembly Diagram (not to scale)
Test Circuit
(cont.)
e
10161
PTF 10161
7
e
Case Outline Specifications
Package 20250
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1999, 2000, 2001 Ericsson Inc.
EUS/KR 1522-PTF 10161 Uen Rev. A 01-16-01
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
1
1
2
3
3
Primary dimensions are inches; alternate dimensions are mm.
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