14
/ Power Devices (IGBT)
IGBTMolded Package Type IGBTs
Molded package types, such as microwave ovens
IGBTFast Recovery Diodes for IGBT
FRD
Molded FRD
V
CES
V
GES
I
C
P
C
V
CEsat
V
GE
=15V
tf
R
thj-c
Device type
Cont.
Max.
Ic
Package
Net mass
Volts
Volts
Amps.
Watts
Volts
Amps.
sec.
/W
Grams
1MBH60D-090A 900
20
60
260
3.2
60
0.8
0.481
TO-3PL
9.5
1MBH65D-090A 900
20
65
300
5.54
60
0.77
0.417
TO-3PL
9.5
V
RRM
I
FM
V
F
trr
Device type
Switching time (Max.)
Package
Net mass
Volts
Amps.
Volts
(sec.) di/dt=100A/s 70 recovery
Grams
ERW01-060
600
5(T
C
=118
)
3 (I
F
= 5A)
0.3 (I
F
= 5A, V
R
=200V)
TO-220AB(single)
2.0
ERW02-060
600
10(T
C
=100
)
3 (I
F
=10A)
0.3 (I
F
=10A, V
R
=200V)
TO-220AB(single)
2.0
ERW03-060
600
15(T
C
=92
)
3 (I
F
=15A)
0.3 (I
F
=15A, V
R
=200V)
TO-220AB(single)
2.0
ERW04-060
600
20(T
C
=91
)
3 (I
F
=20A)
0.3 (I
F
=20A, V
R
=200V)
TO-220AB(single)
2.0
ERW05-060
600
30(T
C
=81
)
3 (I
F
=30A)
0.3 (I
F
=30A, V
R
=200V)
TO-220AB(single)
2.0
ERW06-060
600
50(T
C
=77
)
3 (I
F
=50A)
0.3 (I
F
=50A, V
R
=200V)
TO-3P(single)
5.5
ERW07-120
1200
2.5(T
C
=129
) 3 (I
F
= 2.5A)
0.35 (I
F
= 2.5A, V
R
=200V)
TO-220AB(single)
2.0
ERW08-120
1200
5(T
C
=127
)
3 (I
F
= 5A)
0.35 (I
F
= 5A, V
R
=200V)
TO-220AB(single)
2.0
ERW09-120
1200
8(T
C
=124
)
3 (I
F
= 8A)
0.35 (I
F
= 8A, V
R
=200V)
TO-220AB(single)
2.0
ERW10-120
1200
10(T
C
=123
)
3 (I
F
=10A)
0.35 (I
F
=10A, V
R
=200V)
TO-220AB(single)
2.0
ERW11-120
1200
15(T
C
=122
)
3 (I
F
=15A)
0.35 (I
F
=15A, V
R
=200V)
TO-3P(single)
5.5
ERW12-120
1200
25(T
C
=113
)
3 (I
F
=25A)
0.35 (I
F
=25A, V
R
=200V)
TO-3P(single)
5.5
ERW13-060
600
50(T
C
=90
)
3 (I
F
=50A)
0.3 (I
F
=50A, V
R
=200V)
TO-3PL
9.5
Letter symbols
V
CES
:
Collector-to-emitter rated voltage
(Gate-to-emitter short-circuited)
V
GES
:
Gate-to-emitter rated voltage
(Collector-to-emitter short-circuited)
I
C
:
Rated collector current
P
C
:
Maximum power dissipation
V
CE (sat)
:
Collector-to-emitter saturation voltage
t
on
:
Turn-on time
t
off
:
Turn-off time
t
f
:
Fall time
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