2N5298
Features
With TO-220 package
Designed for use in general purpose amplifier and switching
applications
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING
UNIT
V
CBO
Collector to base voltage
80
V
V
CEO
Collector to emitter voltage
60
V
V
EBO
Emitter to base voltage
5.0
V
I
CP
Peak collector current
5.0
A
I
C
Collector current
4.0
A
P
C
Collector power dissipation
36
W
T
j
Junction temperature
-65~150
T
stg
Storage temperature
-65~150
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
I
CBO
Collector-base cut-off current
V
CB
= 80V; I
E
=0
0.2
mA
I
EBO
Emitter-base cut-off current
V
EB
= 5V; I
C
=0
1.0
mA
I
CEO
Collector-emitter cut-off current
V
CE
=60V,I
B
=0
0.3
mA
V
CBO
Collector-base breakdown voltage
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=30mA,I
B
=0
60
V
V
EBO
Emitter-base breakdown voltage
V
CEsat-1
Collector-emitter saturation voltages
I
C
= 3A; I
B
= 375mA
1.2
V
V
CEsat-2
Collector-emitter saturation voltages
V
CEsat-3
Collector-emitter saturation voltages
V
CEsat-4
Collector-emitter saturation voltages
h
FE-1
Forward current transfer ratio
I
C
=1A,V
CE
=4V
25
h
FE-2
Forward current transfer ratio
I
C
=3A,V
CE
=4V
10
50
h
FE-3
Forward current transfer ratio
h
FE-4
Forward current transfer ratio
V
BE(sat)1
Base-emitter saturation voltages
I
C
=3A,V
CE
=4V
1.8
V
V
BE(sat)2
Base-emitter saturation voltages
V
BE(sat)3
Base-emitter saturation voltages
f
T
Transition frequency at f = 1MHz
I
C
=0.5A,V
CE
=10V
3.0
t
f
Fall time
t
s
Tum-off storage time
Electrical Characteristics Tc=25
Silicon NPN Transistors
TO-220
INCHANGE
Power Transistors
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