2N5609
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING
UNIT
V
CBO
Collector to base voltage
80
V
V
CEO
Collector to emitter voltage
80
V
V
EBO
Emitter to base voltage
5.0
V
I
CP
Peak collector current
A
I
C
Collector current
5.0
A
P
C
Collector power dissipation
25
W
T
j
Junction temperature
150
T
stg
Storage temperature
-55~150
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
I
CBO
Collector-base cut-off current
V
CB
=80V;I
E
=0
10
A
I
EBO
Emitter-base cut-off current
V
EB
=5V, I
C
=0
10
A
I
CEO
Collector-emitter cut-off current
V
CBO
Collector-base breakdown voltage
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA,I
B
=0
80
V
V
EBO
Emitter-base breakdown voltage
V
CEsat-1
Collector-emitter saturation voltages
I
C
=1A; I
B
=0.1A
0.5
V
V
CEsat-2
Collector-emitter saturation voltages
V
CEsat-3
Collector-emitter saturation voltages
V
CEsat-4
Collector-emitter saturation voltages
h
FE-1
Forward current transfer ratio
I
C
=2.5A,V
CE
=5V
70
200
h
FE-2
Forward current transfer ratio
h
FE-3
Forward current transfer ratio
h
FE-4
Forward current transfer ratio
V
BE(sat)1
Base-emitter saturation voltages
I
C
=1A,V
CE
=2V
1.0
V
V
BE(sat)2
Base-emitter saturation voltages
V
BE(sat)3
Base-emitter saturation voltages
f
T
Transition frequency at f = 1MHz
t
f
Fall time
t
s
Tum-off storage time
Electrical Characteristics Tc=25
Silicon PNP Transistors
TO-66
INCHANGE
Power Transistors
PDF 
ZIP